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Browsing by Author "Wen, Liang Gong"

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    Alternative metals for advanced interconnects

    Adelmann, Christoph  
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    Wen, Liang Gong
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    Peter, Antony  
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    Siew, Yong Kong  
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    Croes, Kristof  
    Proceedings paper
    2014, IEEE International Interconnect Technology Conference - IITC, 20/05/2014, p.173-176
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    Alternative metals for advanced interconnects

    Adelmann, Christoph  
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    Wen, Liang Gong
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    Peter, Antony  
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    Siew, Yong Kong  
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    Dutta, Shibesh
    Meeting abstract
    2014-10, International Conference Micro- and Nanoelectronics - ICMNE, 6/10/2014
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    Alternative metals for advanced interconnects

    Adelmann, Christoph  
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    Wen, Liang Gong
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    Dutta, Shibesh
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    Boemmels, Juergen  
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    Tokei, Zsolt  
    Oral presentation
    2015, SEMI Strategic Materials Conference
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    Atomic layer deposition of ruthenium for advanced interconnect applications

    Adelmann, Christoph  
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    Popovici, Mihaela Ioana  
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    Groven, Benjamin  
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    Wen, Liang Gong
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    Dutta, Shibesh
    Meeting abstract
    2016, Materials for Advanced Metalization Conference - MAM, 20/03/2016, p.PMT-08
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    Atomic layer deposition of ruthenium with TiN interface for sub-10nm advanced interconnects beyond copper

    Wen, Liang Gong
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    Roussel, Philippe  
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    Varela Pedreira, Olalla  
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    Briggs, Basoene  
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    Groven, Benjamin  
    Journal article
    2016-09, ACS Applied Materials & Interfaces, (9) 39, p.26119-26125
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    Cryogenic etching vs P4 approaches: paths towards ultra-low damage integration of mesoporous oxide dielectric materials

    de Marneffe, Jean-Francois  
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    Zhang, Liping  
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    Heyne, Markus
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    Krishtab, Mikhail  
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    Goodyear, Andy
    Meeting abstract
    2014, AVS 61st International Symposium and Exhibition, 9/11/2014, p.EM-TuM-6
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    Direct etched Cu characterization for advanced interconnects

    Wen, Liang Gong
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    Yamashita, Fumiko
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    Tang, Baojun
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    Croes, Kristof  
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    Tahara, Shigeru
    Proceedings paper
    2015, IEEE International Interconnect Technology Conference - IITC / Materials for Advanced Metallization Conference - MAM, 18/05/2015, p.173-176
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    Growth evolution and characterization of ultrathin CoGe2 films synthesized via catalytic solid-vapor reaction technique

    Peter, Antony  
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    Opsomer, Karl  
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    Adelmann, Christoph  
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    Van Ammel, Annemie  
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    Meersschaut, Johan  
    Journal article
    2014, Journal of Materials Chemistry C, (2) 10, p.1902-1912
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    Integration aspects of post-porosity low-k protection using PMMA sacrificial filler

    Zhang, Liping  
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    de Marneffe, Jean-Francois  
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    Wen, Liang Gong
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    Wilson, Chris  
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    Tokei, Zsolt  
    Meeting abstract
    2016, Materials for Advanced Metallization - MAM, 20/03/2016, p.55-56
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    Integration of porous low-k dielectrics using post porosity pore protection

    Zhang, Liping  
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    de Marneffe, Jean-Francois  
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    Verdonck, Patrick  
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    Heylen, Nancy  
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    Wen, Liang Gong
    Journal article
    2016, Journal of Physics D: Applied Physics, (49) 50, p.505105
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    Low temperature catalytic chemical vapour synthesis of Cu3Ge thin films for interconnect applications

    Peter, Antony  
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    Wen, Liang Gong
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    Carbonell, Laure
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    Schaekers, Marc  
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    Tokei, Zsolt  
    Meeting abstract
    2013, Materials for Advanced Metallization - MAM, 10/03/2013, p.115-116
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    Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications

    Peter, Antony  
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    Carbonell, Laure
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    Schaekers, Marc  
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    Opsomer, Karl  
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    Adelmann, Christoph  
    Journal article
    2014, Microelectronic Engineering, 120, p.246-250
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    On-chip interconnect trends, challenges and solutions: how to keep RC and reliability under control

    Tokei, Zsolt  
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    Ciofi, Ivan  
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    Roussel, Philippe  
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    Debacker, Peter  
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    Raghavan, Praveen
    Proceedings paper
    2016, Symposium on VLSI Technology, 13/06/2016, p.181-182
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    Reliability study on cobalt and ruthenium as alternative metals for advance interconnects

    Varela Pedreira, Olalla  
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    Croes, Kristof  
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    Lesniewska, Alicja  
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    Wu, Chen  
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    van der Veen, Marleen  
    Proceedings paper
    2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.6B-2.1-6B-2.8
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    Ruthenium metallization for advanced interconnects

    Wen, Liang Gong
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    Adelmann, Christoph  
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    Varela Pedreira, Olalla  
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    Dutta, Shibesh
    Proceedings paper
    2016, IEEE International Interconnect Technology Conference / Advanced Metallization Conference - IITC/AMC, 23/05/2016, p.34-36
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    Ruthenium nanowires by selective atomic layer deposition

    Swerts, Johan  
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    Wen, Liang Gong
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    Delabie, Annelies  
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    Phung, Quan
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    Boemmels, Juergen  
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    Tokei, Zsolt  
    Meeting abstract
    2013, 13th International Conference on Atomic Layer Deposition - ALD 2013, 28/07/2013
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    Scaling of Back End of Line Processing : opportunities and challenges

    Verdonck, Patrick  
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    Wilson, Chris  
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    Ronse, Kurt  
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    Wen, Liang Gong
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    Armini, Silvia  
    Meeting abstract
    2016, SEMINATEC, 14/04/2016
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    Self-organized organic/inorganic films functional to next generation metallization schemes

    Armini, Silvia  
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    Carnevali, Guido
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    Sun, Yiting  
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    Zhang, Liping  
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    de Marneffe, Jean-Francois  
    Meeting abstract
    2014, IUMRS-ICEM - International Conference on Electronic Materials, 8/06/2014, p.C4-IT-0541
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    The effects of scaling on back end of line processing

    Verdonck, Patrick  
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    Wilson, Chris  
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    Wen, Liang Gong
    Proceedings paper
    2014, 29th Symposium on Microelectronics Technology and Devices - SBMICRO, 1/09/2014, p.1-4
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    Ultra-low damage integration of k= 2.3 periodic mesoporous oxide dielectric material using cryogenic etching

    de Marneffe, Jean-Francois  
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    Zhang, Liping  
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    Krishtab, Mikhail  
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    Goodyear, Andy
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    Cooke, Mike
    Meeting abstract
    2014, MRS Spring Meeting Symposium CC: New Materials and Processes for Interconnects, Novel Memory and Advanced Display Technologies, 21/04/2014, p.CC1.04

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