Browsing by Author "Xu, Zhen"
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Publication A study of relaxation current in high-k gate stacks
Journal article2004-03, IEEE Trans. Electron Devices, (51) 3, p.402-408Publication Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/Al2O3/SiO2 stack
Journal article2004-08, Journal of Applied Physics, (96) 3, p.1614-1619Publication Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks
Journal article2002, Journal of Applied Physics, (91) 12, p.10127-10129Publication Deposition of 60nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices
Journal article2005-06, Microelectronic Engineering, 80C, p.162-165Publication Electrical characterization of SrBi2Ta2O2O9(SBT)/high-k gate stack in metal-ferroelectric-insulator-semiconductor structure
Xu, ZhenPHD thesis2005-09Publication Electrical properties of Al2O3/ZrO2/Al2O3 gate stack in p-substrate metal oxide semiconductor devices
Journal article2003, Journal of the Electrochemical Society, (150) 5, p.G307-G310Publication HfO2 and HfSixOyNz high-k layers deposited by MOCVD in mixed gas flows of N2O and O2
Proceedings paper2004, Physics and Technology of High-k Gate Dielectrics II, 12/10/2003, p.101-111Publication HfONx high-k layers deposited by MOCVD in mixed gas flows of N2O and O2
Meeting abstract2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003Publication Influence of top electrode deposition conditions on the reliability of integrated SBT ferroelectric capacitors
Oral presentation2004, Journées Couches Ferroelectriques - JCFPublication Issues, achievements and challenges towards intergration of high-k dielectrics
Proceedings paper2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002Publication Optimization of the ferroelectric film for application in scaled FeFET
Oral presentation2004, MRS Fall Meeting Symposium D: Materials and Processes for Nonvolatile MemoriesPublication Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
Journal article2002, Applied Physics Letters, (80) 11, p.1975-1977Publication Selection of ferroelectric/high-k gate stack combination for optimized FeFET performance
Oral presentation2004, MRS Fall Meeting Symposium D: Materials and Processes for Nonvolatile MemoriesPublication Thermal stability and scalability of zr-aluminate-based high-k gate stacks