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Browsing by Author "Zambrano, R."

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    A highly reliable 3-dimensional integrated SBT ferroelectric capacitor enabling FeRAM scaling

    Goux, Ludovic  
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    Russo, G.
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    Menou, N.
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    Lisoni, Judit
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    Schwitters, M.
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    Paraschiv, Vasile  
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    Maes, David
    Journal article
    2005-04, IEEE Trans. Electron Devices, (52) 4, p.447-453
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    Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors

    Goux, Ludovic  
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    Lisoni, Judit
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, D.
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    Haspeslagh, Luc  
    Proceedings paper
    2005, Proceedings 1st International Conference on Memory Technology and Design, 21/05/2005, p.163-166
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    Composition control and ferrolectric properties of sidewalls in three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

    Goux, Ludovic  
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    Lisoni, Judit
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, David
    Journal article
    2005-09, Journal of Applied Physics, (98) 5, p.054507-1-054507-7
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    Development of an SBT MOCVD production process for FERAM applications

    Everaert, Jean-Luc
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    Bartic, Andrei
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    Kaczer, Ben  
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    Wouters, Dirk
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    Monchoix, Hervé
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    Mitaut, Christian
    Meeting abstract
    2001, 13th International Symposium on Integrated Ferroelectrics - ISIF, 11/03/2001, p.8.2.1C
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    Enhanced oxidation of TiAIN barriers integrated in three dimensional ferroelectric capacitor structures

    Lisoni, Judit
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    Johnson, Jo
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    Goux, Ludovic  
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    Paraschiv, Vasile  
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    Maes, David
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    Vander Meeren, Hans
    Journal article
    2007-01, Journal of Applied Physics, (101) 1, p.14908
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    Excellent reliability properties of 0.81mm2 integrated SBT fecap's with 3-D structure

    Goux, Ludovic  
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    Russo, G.
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    Lisoni, Judit
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, David
    Oral presentation
    2005, 7th International Symposium on Integrated Ferroelectrics
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    Ferroelectric properties and reliability of sidewall SBT in integrated 3D FeCAPs

    Goux, Ludovic  
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    Menou, N.
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    Lisoni, Judit
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    Schwitters, M.
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    Paraschiv, Vasile  
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    Maes, David
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    Zhen, X.
    Oral presentation
    2004, The 16th International Symposium on Integrated Ferroelectrics
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    Influence of dry-etch patterning of top electrode and SrBi2Ta2O9 on the properties of ferroelectric capacitors

    Goux, Ludovic  
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    Paraschiv, Vasile  
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    Lisoni, Judit
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    Schwitters, Michael
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    Maes, David
    Journal article
    2005, Journal of the Electrochemical Society, (152) 12, p.C865-C869
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    Influence of metal and SBT dry-etch on FeCAP properties and role of recovery anneals

    Goux, Ludovic  
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    Paraschiv, Vasile  
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    Boullart, Werner  
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    Lisoni, Judit
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    Schwitters, M.
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    Maes, David
    Oral presentation
    2004, International Symposium on Integrated Ferroelectrics
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    Influence of top electrode deposition conditions on the reliability of integrated SBT ferroelectric capacitors

    Goux, Ludovic  
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    Xu, Zhen
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    Paraschiv, Vasile  
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    Schwitters, M.
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    Lisoni, Judit
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    Maes, David
    Oral presentation
    2004, Journées Couches Ferroelectriques - JCF
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    Integration of ferroelectric SrBi2Ta2O9-based capacitors beyond 0.18 CMOS technology

    Johnson, J.
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    Goux, Ludovic  
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, David
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    Haspeslagh, Luc  
    Oral presentation
    2003, Conference of Surface Science and their Applications - CLACSA-11
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    Integration of ferroelectric SrBi2Ta2O9-based capacitors in 0.35 μm CMOS technology

    Lisoni, Judit
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    Johnson, Jo
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    Goux, Ludovic  
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    Schwitters, Michael
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    Paraschiv, Vasile  
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    Maes, David
    Journal article
    2004, Physica Status Solidi C, (1) S1, p.S78-S82
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    Integration of MOCVD SBT stacked ferroelectric capacitors in a 0.35 μm CMOS technology

    Maes, David
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    Everaert, Jean-Luc
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    Goux, Ludovic  
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    Lisoni, Judit
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    Paraschiv, Vasile  
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    Schwitters, M.
    Journal article
    2004, Integrated Ferroelectrics, 66, p.71-83
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    Integration of MOCVD SBT stacked ferroelectric capacitors in A 0.35um CMOS technology

    Maes, David
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    Everaert, Jean-Luc
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    Goux, Ludovic  
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    Lisoni, Judit
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    Paraschiv, Vasile  
    Oral presentation
    2004, The 16th International Symposium on Integrated Ferroelectrics
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    Integration of SrBi2Ta2O9 (SBT) based FRAM capacitors: plasma etch issues and solutions

    Paraschiv, Vasile  
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    Boullart, Werner  
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    Vanhaelemeersch, Serge  
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    Lisoni, Judit
    Oral presentation
    2004, E-MRS Spring Meeting Symposium D: Functional Oxides for Advanced Semiconductor Technologies
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    MOCVD-SBT thin films for advanced FeRAM: deposition and film formation processes

    Wouters, Dirk
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    Everaert, Jean-Luc
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    Schwitters, Michael
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    Johnson, Jo
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    Vander Meeren, Hans
    Meeting abstract
    2003, 15th International Symposium on Integrated Ferroelectrics - ISIF, 9/03/2003, p.388-389
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    Oxygen barrier for stacked SBT-FeCAP on W-plug

    Lisoni, Judit
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    Maes, David
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    Everaert, Jean-Luc
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    Johnson, Jo
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    Paraschiv, Vasile  
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    Haspeslagh, Luc  
    Meeting abstract
    2002, International Joint Conference on the Application of Ferroelectrics - IFFF, 28/05/2002, p.274
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    Oxygen barrier for stacked SBT-FeCAP on W-plugs

    Zambrano, R.
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    Casella, Patrizia
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    Corvasce, C.
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    Monchoix, Hervé
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    Van Autryve, Luc  
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    Lisoni, Judit
    Oral presentation
    2002, Silicon Workshop
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    Process and substrate effects on the properties of MOCVD-deposited SrBi2Ta2O9 films

    Schwitters, M.
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    Everaert, Jean-Luc
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    Lisoni, Judit
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    Paraschiv, Vasile  
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    Goux, Ludovic  
    Oral presentation
    2004, The 16th International Symposium on Integrated Ferroelectrics
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    Spacers alternatives for integration of 3D stacked SBT FeCAPs

    Lisoni, Judit
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    Johnson, J.
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    Everaert, Jean-Luc
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    Paraschiv, Vasile  
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    Boullart, Werner  
    ;
    Maes, David
    Journal article
    2003, Integrated Ferroelectrics, 53, p.257-267
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