Browsing by Author "Zhang, Jian Fu"

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

A Pragmatic Model to Predict Future Device Aging

A single pulse charge pumping technique for fast measurements of interface states

An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques

An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel

Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector

Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations

Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement

NBTI-generated defects in nanoscaled devices: fast characterization methodology and modeling

New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Probing the critical region of conductive filament in nanoscale hafnium-oxide resistive-switching device by random telegraph signals

Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation

TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

Trigger-when-charged: a technique for directly measuring RTN and BTI-induced threshold voltage fluctuation under use-Vdd