Browsing by Author "Zschaetzsch, Gerd"
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Publication 3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.119-122Publication 3D-doping in Finfets and nanowires : fabrication and metrology challenges and solutions
Oral presentation2011, E-MRS Symposium I: Transport in Si-based NanodevicesPublication Atom probe tomography for 3D-dopant analysis in FinFET devices
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.77-78Publication Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation
Proceedings paper2008, 17th International Conference in Ion Implantation Technology - IIT, 8/06/2008, p.464-464Publication Carrier profiling of a cross-sectioned silicon nanowire by scanning spreading resistance microscopy
Proceedings paper2007, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 6/05/2007Publication Conformal doping of FINFET's: a fabrication and metrology challenge
Proceedings paper2008, 17th International Conference in Ion Implantation Technology - IIT, 8/06/2008, p.449-456Publication Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
Proceedings paper2012-09, International Conference on Solid State Devices and Materials - SSDM, 25/09/2012Publication Direct imaging of 3D atomic-scale dopant-defect clustering processes in ion-implanted silicon
Journal article2013, Nano Letters, (13) 6, p.2458-2462Publication Dopant and carrier profiling for 3D-device architectures
Proceedings paper2011, International Workshop on Junction Technology, 7/06/2011Publication Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.195-196Publication FinFETs and their futures
Proceedings paper2010, 6th International SemOI Conference "Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices", 26/04/2010Publication Fundamental study on the impact of C Co-implantation on ultra shallow B junctions
Proceedings paper2009, 9th International Workshop on Junction Technology - IWJT, 11/06/2009, p.123-126Publication Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Proceedings paper2013, Symposium on VLSI Technology, 11/06/2013, p.T196-T197Publication Heated implantation with amorphous carbon CMOS mask for scaled FinFETs
Proceedings paper2013, Symposium on VLSI Technology - VLSIT, 10/06/2013, p.196-197Publication High performance n-mos FinFET by damage-free, conformal extension doping
Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.841-844Publication High resolution analysis of high concentration dopant profiles
Oral presentation2011, 18th International Conference on Secondary Ion Mass Spectrometry - SIMS XXVIIIPublication Improved sidewall doping with small implant angle by AsH3 Ion assisted deposition and doping process for scaled NMOS Si bulk FinFETs
Proceedings paper2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.542-545Publication Junction strategies for 1x nm technology node with FINFET and high mobility channel
Proceedings paper2012, 12th International Workshop on Junction Technology - IWJT, 14/05/2012, p.216-221Publication Novel approach to conformal FINFET extension doping
Proceedings paper2011, Ion Implantation Technology 2010. 18th International Conference, 6/06/2010, p.23