Browsing by Subject "1/F NOISE"
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Publication DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets
Journal article2022, SOLID-STATE ELECTRONICS, 194, p.108360Publication Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
;Li, Kan ;Zhang, En Xia ;Gorchichko, Mariia ;Wang, Peng Fei ;Reaz, MahmudZhao, Simeng E.Journal article2021, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (68) 5, p.740-747Publication In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets
Journal article2023, SOLID-STATE ELECTRONICS, (201) March, p.Art. 108591Publication Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics
Journal article2023, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (70) 4, p.442-448Publication Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
;Andrade, Maria Gloria Cano de ;Bergamim, Luis Felipe de OliveiraBaptista Junior, BrazJournal article2021, SOLID-STATE ELECTRONICS, 183, p.108050Publication Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation
Journal article2021, NPJ 2D MATERIALS AND APPLICATIONS, (5) 1, p.4Publication Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
;Luo, Xuyi ;Zhang, En Xia ;Wang, Peng Fei ;Li, Kan; ; Reed, Robert A.Journal article2023, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (23) 1, p.153-161Publication Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Journal article2022, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (69) 3, p.299-306Publication Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide
Journal article2024, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (71) 8, p.1789-1797Publication Refined Analysis of the Correlated Carrier Number and Mobility Fluctuations Mechanism in MOSFETs
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 10, p.5860-5866Publication Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 1, p.254-260Publication Signal to noise ratio in nanoscale bioFETs
Journal article2022, SOLID-STATE ELECTRONICS, 194, p.Art. 108358Publication TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
;Bonaldo, Stefano ;Gorchichko, Mariia ;Zhang, En Xia ;Ma, Teng ;Mattiazzo, SerenaBagatin, MartaJournal article2022, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (69) 7, p.1444-1452Publication Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
;Gorchichko, Mariia ;Zhang, En Xia ;Wang, Pan ;Bonaldo, StefanoSchrimpf, Ronald D.Journal article2021, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (68) 5, p.687-696Publication Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules
Journal article2023-01-16, NANOSCALE, (15) 5, p.2354-2368