Browsing by author "Makarov, Alexander"
Now showing items 1-17 of 17
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A Compact Physics Analytical Model for Hot-Carrier Degradation
Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020) -
Analysis of the features of hot-carrier degradation in FinFETs
Makarov, Alexander; Tyaginov, Stanislav; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018-10) -
Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Makarov, Alexander; Kaczer, Ben; Vaisman Chasin, Adrian; Vandemaele, Michiel; Grill, Alexander; Hellings, Geert; El-Sayed, Al-Moatasem; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019) -
Border trap based modeling of SiC transistor transfer characteristics
Tyaginov, Stanislav; Jech, Markus; Rzepa, Gerhard; Grill, Alexander; El-Sayed, Al-Moatasem; Pobegen, Gregor; Makarov, Alexander; Grasser, Tibor (2018) -
Correlated time-0 and hot-carrier stress induced FinFET parameter variabilities: modeling approach
Makarov, Alexander; Roussel, Philippe; Bury, Erik; Vandemaele, Michiel; Spessot, Alessio; Linten, Dimitri; Kaczer, Ben; Tyaginov, Stanislav (2020) -
Distribution function based simulations of hot-carrier degradation in nanowire FETs
Vandemaele, Michiel; Kaczer, Ben; Stanojevic, Zlatan; Tyaginov, Stanislav; Makarov, Alexander; Vaisman Chasin, Adrian; Mertens, Hans; Linten, Dimitri; Groeseneken, Guido (2018) -
Full (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs
Vandemaele, Michiel; Kaczer, Ben; Tyaginov, Stanislav; Stanojevic, Zlatan; Makarov, Alexander; Vaisman Chasin, Adrian; Bury, Erik; Mertens, Hans; Linten, Dimitri; Groeseneken, Guido (2019) -
Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach
Sharma, Prateek; Tyaginov, Stanislav; Rauch, Stewart E. III; Franco, Jacopo; Makarov, Alexander; Vexler, Mikhail I.; Kaczer, Ben; Grasser, Tibor (2017) -
Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Tyaginov, Stanislav; Makarov, Alexander; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018) -
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael; Tyaginov, Stanislav (2020) -
On correlation between hot-carrier stress induced device parameter degradation and time-zero variability
Makarov, Alexander; Roussel, Philippe; Bury, Erik; Vandemaele, Michiel; Spessot, Alessio; Linten, Dimitri; Kaczer, Ben; Tyaginov, Stanislav (2019) -
Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Tyaginov, Stanislav; Makarov, Alexander; Jech, Markus; Vexler, Mikhail; Franco, Jacopo; Kaczer, Ben; Grasser, Tibor (2018-02) -
Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Makarov, Alexander; Kaczer, Ben; Roussel, Philippe; Vaisman Chasin, Adrian; Vandemaele, Michiel; Hellings, Geert; El-Sayed, Al-Moatasem; Jech, Markus; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019) -
Stochastic modeling of the impact of random dopants on hot-carrier degradation in n-FinFETs
Makarov, Alexander; Kaczer, Ben; Roussel, Philippe; Vaisman Chasin, Adrian; Grill, Alexander; Vandemaele, Michiel; Hellings, Geert; El-Sayed, Al-Moatasem; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019) -
TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Tyaginov, Stanislav; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael (2022-04-19) -
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors
Tyaginov, Stanislav; Makarov, Alexander; El-Sayed, Al-Moatasem Bellah; Vaisman Chasin, Adrian; Bury, Erik; Jech, Markus; Vandemaele, Michiel; Grill, Alexander; De Keersgieter, An; Vexler, Mikhail; Eneman, Geert; Kaczer, Ben (2022) -
Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs
Tyaginov, Stanislav; El-Sayed, Al-Moatasem; Makarov, Alexander; Vaisman Chasin, Adrian; Arimura, Hiroaki; Vandemaele, Michiel; Jech, Markus; Capogreco, Elena; Witters, Liesbeth; Grill, Alexander; De Keersgieter, An; Eneman, Geert; Linten, Dimitri; Kaczer, Ben (2019)