Browsing by author "Satta, Alessandra"

A comparison of spike, flash, SPER and laser annealing for 45nm CMOS

Lindsay, Richard; Pawlak, Bartek; Kittl, Jorge; Henson, Kirklen; Torregiani, Cristina; Giangrandi, Simone; Surdeanu, Radu; Vandervorst, Wilfried; Mayur, A.; Ross, J.; McCoy, S.; Gelpey, J.; Elliott, K.; Pagès, Xavier; Satta, Alessandra; Lauwers, Anne; Stolk, P.; Maex, Karen (2003)

A study of growth mechanism of TiN and WCN barrier films deposited by atomic layer deposition on different substrates

Satta, Alessandra; Schuhmacher, Jörg; Whelan, Caroline; Vandervorst, Wilfried; Brongersma, Sywert; Beyer, Gerald; Brijs, Bert; Conard, Thierry; Maex, Karen; Vantomme, Andre; Viitanen, M.M.; Brongersma, H.H. (2002)

Active dopant characterization methodology for Germanium

Clarysse, Trudo; Eyben, Pierre; Janssens, Tom; Hoflijk, Ilse; Vanhaeren, Danielle; Satta, Alessandra; Meuris, Marc; Vandervorst, Wilfried (2005)

Advanced carrier depth profiling on Si and Ge with M4PP

Clarysse, Trudo; Eyben, Pierre; Parmentier, Brigitte; Van Daele, Benny; Satta, Alessandra; Vandervorst, Wilfried; Lin, Rong; Petersen, Dirch; Folmer Nielsen, Peter (2007)

Advanced carrier depth profiling on Si and Ge with micro four-point probe

Clarysse, Trudo; Eyben, Pierre; Parmentier, Brigitte; Van Daele, Benny; Satta, Alessandra; Vandervorst, Wilfried; Lin, Rong; Petersen, Dirch H.; Folmer Nielsen, Peter (2008)

Analysis of junction leakage in advanced germanium p+/n junctions

Eneman, Geert; Sicart i Casain, Oriol; Simoen, Eddy; Brunco, David; De Jaeger, Brice; Satta, Alessandra; Nicholas, Gareth; Claeys, Cor; Meuris, Marc; Heyns, Marc (2007)

Atomic layer deposited barriers for copper interconnects

Schuhmacher, Jorg; Martin Hoyas, Ana; Ernur, Didem; Tokei, Zsolt; Travaly, Youssef; Bruynseraede, Christophe; Satta, Alessandra; Whelan, Caroline; Shamiryan, Denis; Beyer, Gerald; Abell, Thomas; Sutcliffe, Victor; Schaekers, Marc; Maex, Karen (2004)

Atomic layer deposition of barriers for interconnect

Besling, Wim; Satta, Alessandra; Schuhmacher, Jörg; Abell, Thomas; Sutcliffe, Victor; Martin Hoyas, Ana; Beyer, Gerald; Gravesteijn, Dirk; Maex, Karen (2002)

Atomic-layer deposited barrier and seed layers for interconnects

Schuhmacher, Jorg; Martin Hoyas, Ana; Satta, Alessandra; Maex, Karen (2005)

Barriers for Cu/low k damascene structures

Maex, Karen; Tokei, Zsolt; Satta, Alessandra; Lanckmans, Filip; Wu, Wen; Iacopi, Francesca (2001)

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates

Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Clemente, Francesca; Satta, Alessandra; Meuris, Marc (2008)

Characterization of TiN films deposited by atomic layer deposition

Besling, W.F.A.; Satta, Alessandra; Schuhmacher, Jörg; Beyer, Gerald; Maex, Karen; Kilpela, Olli; Sprey, Hessel (2002)

Comparative study of Ni-silicide and Co-silicide for sub 0.25 μm technologies

Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Stucchi, Michele; Vrancken, Christa; Deweerdt, Bruno; Maex, Karen (1999)

Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies

Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Jin, S.; Bender, Hugo; Stucchi, Michele; Vrancken, Evi; Deweerdt, Bruno; Maex, Karen (2000)

Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates

Simoen, Eddy; Satta, Alessandra; Meuris, Marc; Janssens, Tom; Clarysse, Trudo; Benedetti, Alessandro; Demeurisse, Caroline; Brijs, Bert; Hoflijk, Ilse; Vandervorst, Wilfried; Claeys, Cor (2005)