Browsing by author "Verhaegen, Staf"

A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography

Nackaerts, Axel; Ercken, Monique; Demuynck, Steven; Lauwers, Anne; Baerts, Christina; Bender, Hugo; Boullart, Werner; Collaert, Nadine; Degroote, Bart; Delvaux, Christie; de Marneffe, Jean-Francois; Dixit, Abhisek; De Meyer, Kristin; Hendrickx, Eric; Heylen, Nancy; Jaenen, Patrick; Laidler, David; Locorotondo, Sabrina; Maenhoudt, Mireille; Moelants, Myriam; Pollentier, Ivan; Ronse, Kurt; Rooyackers, Rita; Van Aelst, Joke; Vandenberghe, Geert; Vandervorst, Wilfried; Vandeweyer, Tom; Vanhaelemeersch, Serge; Van Hove, Marleen; Van Olmen, Jan; Verhaegen, Staf; Versluijs, Janko; Vrancken, Christa; Wiaux, Vincent; Jurczak, Gosia; Biesemans, Serge (2004-12)

A methodology for double patterning compliant split and design

Wiaux, Vincent; Verhaegen, Staf; Iwamoto, Fumio; Maenhoudt, Mireille; Matsuda, Takashi; Postnikov, Sergey; Vandenberghe, Geert (2008)

Analysis of the impact of reticle CD variations on the available process windows for a 100nm CMOS process

Verhaegen, Staf; Vandenberghe, Geert; Jonckheere, Rik; Ronse, Kurt (2002)

ArF lithography with combination of moderate OAI and attenuated PSM

Kim, Young-Chang; Vandenberghe, Geert; Verhaegen, Staf; Ronse, Kurt (2001)

Assessment of OPC effectiveness using two-dimensional metrics

Wiaux, Vincent; Philipsen, Vicky; Jonckheere, Rik; Vandenberghe, Geert; Verhaegen, Staf; Hoffmann, Thomas; Ronse, Kurt; Howard, William B.; Maurer, Wilhelm; Preil, Moshe E. (2002)

CD control for two-dimensional features in future technology nodes

Verhaegen, Staf; Gordon, R.; Jonckheere, Rik; McCallum, M.; Ronse, Kurt (2001)

Challenge for sub-100-nm DRAM gate printing using ArF lithography with combination of moderate OAI and attPSM

Kim, Young-Chang; Vandenberghe, Geert; Verhaegen, Staf; Ronse, Kurt (2002)

Challenges building a 22nm node 6T-SRAM cell using immersion lithography

Ercken, Monique; Altamirano Sanchez, Efrain; Baerts, Christina; Brus, Stephan; De Backer, Johan; Demand, Marc; Delvaux, Christie; Horiguchi, Naoto; Locorotondo, Sabrina; Vandeweyer, Tom; Veloso, Anabela; Verhaegen, Staf (2009)

Challenges in patterning 45nm node multiple-gate devices and SRAM cells

Ercken, Monique; Delvaux, Christie; Baerts, Christina; Locorotondo, Sabrina; Degroote, Bart; Wiaux, Vincent; Nackaerts, Axel; Rooyackers, Rita; Verhaegen, Staf; Pollentier, Ivan (2004)

Challenges in using optical lithography for the building of a 22 nm node 6T=-SRAM cell

Ercken, Monique; Altamirano Sanchez, Efrain; Baerts, Christina; Brus, Stephan; De Backer, Johan; Delvaux, Christie; Demand, Marc; Horiguchi, Naoto; Locorotondo, Sabrina; Vandeweyer, Tom; Veloso, Anabela; Verhaegen, Staf (2010)

Checking design conformance and optimizing manufacturability using automated double-patterning decomposition

Cork, Christopher M.; Ward, Brian; Barnes, Levi D.; Painter, Ben; Lucas, Kevin; Luk-Pat, Gerry; Wiaux, Vincent; Verhaegen, Staf; Maenhoudt, Mireille (2008)

Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12)

Density limits in logic metal1 using double patterning

Wiaux, Vincent; Verhaegen, Staf; Fenger, Germain; Wong, Patrick (2009)

Double patterning design split implementation and validation for the 32nm node

Drapeau, Martin; Wiaux, Vincent; Hendrickx, Eric; Verhaegen, Staf; Machida, Takahiro (2007)

Double patterning EDA solutions for the 32nm HP and beyond

Bailey, George; Tritchkov, Alexander; Park, Jea-Woo; Hong, Le; Wiaux, Vincent; Hendrickx, Eric; Verhaegen, Staf; Xie, Peng; Versluijs, Janko (2007)

Double-patterning interactions with wafer processing, optical proximity correction, and physical design flows

Lucas, Kevin; Cork, Christopher M.; Miloslavsky, Alexander; Luk-Pat, Gerard; Barnes, Levi D.; Hapli, John; Lewellen, John; Rollins, Gregoy; Wiaux, Vincent; Verhaegen, Staf (2009)

EUV lithography implementation on contact and metal interconnect level of a 22nm node 0.099um2 6T-SRAM cell

Goethals, Mieke; Demuynck, Steven; Van Roey, Frieda; Baudemprez, Bart; Hermans, Jan; Huffman, Craig; Lazzarino, Frederic; Pollentier, Ivan; Hendrickx, Eric; Jonckheere, Rik; Verhaegen, Staf; Veloso, Anabela; Vandenberghe, Geert; Ronse, Kurt (2009)

Experimental verification of source-mask optimization and freeform illumination for 22 nm node SRAM cells

Bekaert, Joost; Laenens, Bart; Verhaegen, Staf; Van Look, Lieve; Trivkovic, Darko; Lazzarino, Frederic; Vandenberghe, Geert; Van Adrichem, Paul; Socha, Robert; Hsu, Stephen; Liu, Hua Yu; Mouraille, Orion; Schreel, Koen; Dusa, Mircea; Zimmermann, Joerg; Gräupner, Paul; Neumann, Jens Timo (2011-03)

Exploration of etch step interactions in the dual patterning process for process modeling

Melvin, Lawrence; Ward, Brian; Song, H.; Rhie, S.U.; Lucas, K.D.; Wiaux, Vincent; Verhaegen, Staf; Maenhoudt, Mireille (2008)

Extreme scaling of optical lithography: overview of process integration issues

Ronse, Kurt; Wiaux, Vincent; Verhaegen, Staf; Van Look, Lieve; Bekaert, Joost; Laidler, David; Cheng, Shaunee; Maenhoudt, Mireille; Vandenberghe, Geert; Dusa, Mircea (2009)