Browsing by author "Dekoster, Johan"
Now showing items 1-20 of 81
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100-Gbps RZ data reception in 67-Ghz si-contacted germanium waveguide p-i-n photodetectors
Chen, Hongtao; Galili, M.; Verheyen, Peter; De Heyn, Peter; Lepage, Guy; Dekoster, Johan; Balakrishnan, Sadhishkumar; Absil, Philippe; Oxenlowe, L.; Van Campenhout, Joris; Roelkens, Gunther (2017-02) -
6.1 family: the next generation of III-V semiconductors for advanced CMOS applications: epitaxial growth and passivation challenges
Merckling, Clement; Alian, AliReza; Firrincieli, Andrea; Jiang, Sijia; Cantoro, Mirco; Dekoster, Johan; Caymax, Matty; Heyns, Marc (2012) -
AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Cheng, Kai; Liang, Hu; Van Hove, Marleen; Geens, Karen; De Jaeger, Brice; Srivastava, Puneet; Kang, Xuanwu; Favia, Paola; Bender, Hugo; Decoutere, Stefaan; Dekoster, Johan; del Agua Borniquel, Jose Ignacio; Jun, Sung Won; Chung, Hua (2012) -
An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vanherle, Wendy; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
An ultra-short InP nanowire laser monolithic integrated on (001) silicon substrate
Wang, Zhechao; Tian, Bin; Paladugu, Mohan; Pantouvaki, Marianna; Merckling, Clement; Guo, Weiming; Dekoster, Johan; Caymax, Matty; Van Campenhout, Joris; Absil, Philippe; Van Thourhout, Dries (2013) -
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, S.; Shimura, Y.; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, O.; Sakai, A.; Zaima, S. (2010) -
Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Temst, Kristiaan; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Sakai, A.; Zaima, Shigeaki (2010-10) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, Shotaro; Nishimura, T.; Eneman, Geert; Firrincieli, Andrea; Demeulemeester, Jelle; Vantomme, Andre; Clarysse, Trudo; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2011) -
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Vincent, Benjamin; Shimura, Y.; Takeuchi, S.; Nishimura, T.; Demeulemeester, J.; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Nakatsuka, O.; Zaima, S.; Dekoster, Johan; Caymax, Matty; Loo, Roger (2010) -
Compressive stress relaxation in Si-doped GaN grown on Si(111) investigated by in situ curvature measurement
Cheng, Kai; Leys, Maarten; Dekoster, Johan; Degroote, Stefan (2010) -
Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
Everaert, Jean-Luc; Rosseel, Erik; Dekoster, Johan; Pap, Aron; Maszaros, Albert; Kis-Szabo, Krisztian; Pavelka, Tibor (2010) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Merckling, Clement; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, Guy; Scarrozza, Marco; Pourtois, Geoffrey; Kwo, J.; Hong, M.; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2011) -
Design and optical characterization of novel InGaN/GaN multiple quantum wells structures by metal organic vapor phase epitaxy
Zhang, Liyang; Cheng, Kai; Liang, Hu; Lieten, Ruben; Latkowska, Magdalena; Baranowski, Michal; Kudrawiec, Robert; Misiewicz, Jan; Dekoster, Johan; Borghs, Gustaaf (2012) -
Effective reduction of interfacial traps in Al2O3 /GaAs(001) gate stacks using surface engineering and thermal annealing
Chang, Yao-Chung; Merckling, Clement; Penaud, Julien; Lu, Chung-Yu; Wang, Wei-E; Dekoster, Johan; Meuris, Marc; Caymax, Matty; Heyns, Marc; Kwo, Raynien; Hong, Minghwei (2010) -
Epitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty (2010) -
Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS
Caymax, Matty; Merckling, Clement; Wang, Gang; Orzali, Tommaso; Guo, Weiming; Vandervorst, Wilfried; Dekoster, Johan; Waldron, Niamh; Thean, Aaron (2012) -
Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2010-09) -
Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2011) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010)