Browsing by author "Moussa, Alain"

300mm in-line metrologies for the characterization of ultra-thin layer of 2D materials

Moussa, Alain; Bogdanowicz, Janusz; Groven, Benjamin; Morin, Pierre; Beggiato, Matteo; Saib, Mohamed; Santoro, G.; Abramovitz, Y.; Houchens, K.; Ben Nissim, S.; Meir, N.; Hung, J.; Urbanowicz, A.; Koret, R.; Turovets, I.; Lorusso, Gian; Charley, Anne-Laure (2023)

Advanced characterization of 2D materials using SEM image processing and machine learning

Saib, Mohamed; Moussa, Alain; Beggiato, Matteo; Groven, Benjamin; Medina Silva, Henry; Morin, Pierre; Bogdanowicz, Janusz; Kar, Gouri Sankar; Charley, Anne-Laure (2024)

Advanced characterization of carrier profiles in germanium using micro-machined contact probes

Clarysse, Trudo; Konttinen, Mikko; Parmentier, Brigitte; Moussa, Alain; Vandervorst, Wilfried; Impellizzeri, Giuliana; Napolitani, Enrico; Privitera, Vittorio; Nielsen, Peter F.; Petersen, Dirch H.; Hansen, Ole (2012)

ALD strontium titanates and their characterization

Popovici, Mihaela Ioana; Van Elshocht, Sven; Tomida, Kazuyuki; Menou, Nicolas; Swerts, Johan; Pawlak, Malgorzata; Kaczer, Ben; Kim, Min-Soo; Brijs, Bert; Favia, Paola; Conard, Thierry; Franquet, Alexis; Moussa, Alain; Debusschere, Ingrid; Altimime, Laith; Kittl, Jorge (2010)

Alignment and overlay through opaque metal layers

Blanco, Victor; Canga, Eren; Jehoul, Christiane; Moussa, Alain; Tamaddon, Amir-Hossein; Tabery, C.; Gunjala, G.; Menchtchikov, B.; Zacca, V. G.; Lalbahadoersing, S.; den Boef, A.; Synowicky, R. (2023)

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Gencarelli, Federica; Shimura, Yosuke; Kumar, Arul; Vincent, Benjamin; Moussa, Alain; Vanhaeren, Danielle; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Heyns, Marc (2015)

Atomic layer deposited Gd-doped HfO2 thin films: from high-k dielectrics to ferroelectrics

Adelmann, Christoph; Ragnarsson, Lars-Ake; Moussa, Alain; Woicik, Joseph; Mueller, Stefan; Schoeder, Uwe; Afanasiev, Valeri; Van Elshocht, Sven (2012)

Atomic layer deposition of gadolinium aluminate layers using Gd(iPrCp)3, TMA, and O3 or H2O

Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Dewulf, Daan; Hardy, An; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Van Bael, Marlies; Maes, Jan; Jurczak, Gosia; Kittl, Jorge; Van Elshocht, Sven (2010)

Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties

Popovici, Mihaela Ioana; Groven, Benjamin; Marcoen, Kristof; Phung, Quan; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; Van den Berg, Jaap; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Gosia; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph (2017)

Atomic layer deposition of tantalum oxide and tantalum silicate from chloride precursors

Adelmann, Christoph; Delabie, Annelies; Schepers, Bart; Rodriguez, Leonard; Franquet, Alexis; Conard, Thierry; Opsomer, Karl; Vaesen, Inge; Moussa, Alain; Pourtois, Geoffrey; Pierloot, Christine; Caymax, Matty; Van Elshocht, Sven (2012)

Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

Han, Jeong Hwan; Ungur, Elisaveta; Franquet, Alexis; Opsomer, Karl; Conard, Thierry; Moussa, Alain; De Gendt, Stefan; Van Elshocht, Sven; Adelmann, Christoph (2013-07)

Atomic-layer deposition of lutetium aluminate thin films for non-volatile memory applications

Adelmann, Christoph; Swerts, Johan; Conard, Thierry; Brijs, Bert; Franquet, Alexis; Hardy, An; Tielens, Hilde; Opsomer, Karl; Moussa, Alain; Van Bael, Marlies; Jurczak, Gosia; Kittl, Jorge; Van Elshocht, Sven (2011)

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates

Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Clemente, Francesca; Satta, Alessandra; Meuris, Marc (2008)

Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates

Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Meuris, Marc (2007)

Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments

Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011)

Characterization of boron-doped diamond films for application in nanoscale electrical measurements

Hantschel, Thomas; Zimmer, Jerry; Moussa, Alain; Olanterae, Lauri; Clemente, Francesca; Geypen, Jef; Bender, Hugo; Vandervorst, Wilfried (2010)

Characterization of threading dislocations in thin germanium layers by defect etching: towards chromium and HF free solution

Souriau, Laurent; Atanasova, Tanya; Terzieva, Valentina; Moussa, Alain; Caymax, Matty; Loo, Roger; Meuris, Marc; Vandervorst, Wilfried (2008)

Characterization of ultra-thin nickel-silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)

Peter, Antony; Yu, Hao; Dutta, Shibesh; Rosseel, Erik; Van Elshocht, Sven; Paulussen, Kris; Moussa, Alain; Vaesen, Inge; Schaekers, Marc (2016)

Chemical contributions of low-energy ion beams towards ripple formation: A mixed beam experimental study

Sarkar, Subhendu; Franquet, Alexis; Moussa, Alain; Vandervorst, Wilfried (2008)

Chemical effects during ripple formation with isobaric ion beams

Sarkar, Sou; Franquet, Alexis; Moussa, Alain; Vandervorst, Wilfried (2011-05)