Browsing by author "Meneghesso, Gaudenzio"
Now showing items 1-20 of 58
-
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Marcon, Denis; Kauerauf, Thomas; Medjdoub, Farid; Das, Jo; Van Hove, Marleen; Srivastava, Puneet; Cheng, Kai; Leys, Maarten; Mertens, Robert; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Borghs, Gustaaf (2010-12) -
Al2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR
Goverde, Hans; Vermang, Bart; Morato, Alessandro; John, Joachim; Horzel, Jörg; Meneghesso, Gaudenzio; Poortmans, Jef (2012) -
AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
Zanoni, Enrico; Meneghini, Matteo; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio (2013) -
An insight into the parasitic capacitances of SOI and bulk FinFET devices
Griffoni, Alessio; Thijs, Steven; Linten, Dimitri; Scholz, Mirko; Groeseneken, Guido; Meneghesso, Gaudenzio (2009) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Angular and strain dependence of heavy-ions induced degration in SOI FinFETs
Griffoni, Alessio; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Simoen, Eddy; Claeys, Cor (2010) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions
Zanoni, Enrico; Meneghini, Matteo; Stocco, Antonio; Marcon, Denis; Bertin, Marco; Silvestri, Riccardo; Ferretti, Marco; Rampazzo, Fabiana; Meneghesso, Gaudenzio (2012) -
Degradation of AlGaN/GaN HEMTs below the "critical voltage": a time-dependent analysis
Meneghini, Matteo; Stocco, Antonio; Bertin, M; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2012) -
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface
Meneghini, Matteo; Bertin, Marco; Stocco, Antonio; dal Santo, Gabriele; Marcon, Denis; Malinowski, Pawel; Chini, Alessandro; Meneghesso, Gaudenzio; Zanoni, Enrico (2013) -
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Meneghini, Matteo; Rossetto, Isabella; Borga, Matteo; Canato, Eleonora; De Santi, Carlo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Decoutere, Stefaan (2017) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2009) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2008) -
Electrical characterization of ALD Al2O3 – HfO2 and PECVD Al2O3 passivation layers for p-type CZ-Silicon PERC solar cells
Morato, Alessandro; Vermang, Bart; Goverde, Hans; Cornagliotti, Emanuele; Meneghesso, Gaudenzio; John, Joachim; Poortmans, Jef (2012) -
Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs
Griffoni, Alessio; Thijs, Steven; Russ, Christian; Tremouilles, David; Linten, Dimitri; Scholz, Mirko; Simoen, Eddy; Claeys, Cor; Meneghesso, Gaudenzio; Groeseneken, Guido (2010) -
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model
Meneghini, Matteo; Stocco, Antonio; Bertini, Marco; Ronchi, Nicolò; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2011) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress
Ruzzarin, Maria; Meneghini, Matteo; Rossetto, Isabella; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016)