Browsing by author "Meneghesso, Gaudenzio"
Now showing items 21-40 of 57
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Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs
Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Exploration of gate trench module for vertical GaN devices
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020) -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Stockman, Arno; Masin, Fabrizio; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Bakeroot, Benoit; Moens, Peter (2018) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Gate stability of GaN-based HEMTs with p-type gate
Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Li, Xiangdong; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Integration of pentacene transistors on Parylene foil
Pinato, Alessandro; De Jonge, Stijn; Gay, David; Myny, Kris; Meneghesso, Gaudenzio; Zanoni, Enrico; Genoe, Jan; Heremans, Paul (2007) -
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon
Meneghini, Matteo; Bisi, Davide; Stoffels, Steve; Marcon, Denis; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Kinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs
Bisi, Davide; Meneghini, Matteo; Marino, Fabio; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Multi-gate devices for the 32-nm node and beyond: advantages and issues
Griffoni, Alessio; Simoen, Eddy; Collaert, Nadine; Claeys, Cor; Paccagnella, Alessandro; Meneghesso, Gaudenzio (2008) -
Next generation FinFET devices in bulk silicon technology and their benefits for ESD robustness
Griffoni, Alessio; Thijs, Steven; Russ, Christian; Tremouilles, David; Linten, Dimitri; Scholz, Mirko; Collaert, Nadine; Witters, Liesbeth; Meneghesso, Gaudenzio; Groeseneken, Guido (2009) -
Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; You, Shuzhen; Posthuma, Niels; Decoutere, Stefaan; Zanoni, Enrico (2016) -
On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
Modolo, Nicola; De Santi, Carlo; Baratella, Giulio; Minetto, Andrea; Sayadi, Luca; Sicre, Sebastien; Prechtl, Gerhard; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2024) -
On-wafer human metal model measurements for system-level ESD analysis on component level
Scholz, Mirko; Linten, Dimitri; Thijs, Steven; Griffoni, Alessio; Sawada, Masanori; Nakaei, T; Hasebe, Takumi; Lafonteese, David; Vashchenko, Vladislav; Vandersteen, Gerd; Hopper, Peter; Meneghesso, Gaudenzio; Groeseneken, Guido (2009-10) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
Meneghini, Matteo; Barbato, A.; Borga, Matteo; De Santi, Carlos; Barbato, M.; Stoffels, Steve; Zhao, Ming; Posthuma, Niels; Decoutere, Stefaan; Haeberlen, Oliver; Detzel, Thomas; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Reliability analysis of permanent degradations on AlGaN/GaN HEMTs
Marcon, Denis; Meneghesso, Gaudenzio; Wu, Tian-Li; Stoffels, Steve; Meneghini, Matteo; Zanoni, Enrico; Decoutere, Stefaan (2013) -
Reliability and parasitic issues in GaN-based power HEMTs
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Zanoni, Enrico (2016)