Browsing by author "de Potter de ten Broeck, Muriel"
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3D stacked IC demonstration using a through silicon via first approach
Van Olmen, Jan; Mercha, Abdelkarim; Katti, Guruprasad; Huyghebaert, Cedric; Van Aelst, Joke; Seppala, Emma; Zhao, Chao; Armini, Silvia; Vaes, Jan; Cotrin Teixeira, Ricardo; Van Cauwenberghe, Marc; Verdonck, Patrick; Verhemeldonck, Koen; Jourdain, Anne; Ruythooren, Wouter; de Potter de ten Broeck, Muriel; Opdebeeck, Ann; Chiarella, Thomas; Parvais, Bertrand; Debusschere, Ingrid; Hoffmann, Thomas Y.; De Wachter, Bart; Dehaene, Wim; Stucchi, Michele; Rakowski, Michal; Soussan, Philippe; Cartuyvels, Rudi; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2008) -
A 50nm high-k poly silicon gate stack with a buried SiGe channel
Jakschik, S.; Hoffmann, Thomas Y.; Cho, Hag-Ju; Veloso, Anabela; Loo, Roger; Hyun, S.; Sorada, H.; Inoue, A.; de Potter de ten Broeck, Muriel; Eneman, Geert; Severi, Simone; Absil, Philippe; Biesemans, Serge (2007) -
A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
Kondoh, Eiichi; Conard, Thierry; Brijs, Bert; Jin, S.; Bender, Hugo; de Potter de ten Broeck, Muriel; Maex, Karen (1999) -
Active-lite interposer for 2.5 & 3D integration
Hellings, Geert; Scholz, Mirko; Detalle, Mikael; Velenis, Dimitrios; de Potter de ten Broeck, Muriel; Roda Neve, Cesar; Li, Yunlong; Van Huylenbroeck, Stefaan; Chen, Shih-Hung; Marinissen, Erik Jan; La Manna, Antonio; Van der Plas, Geert; Linten, Dimitri; Beyne, Eric; Thean, Aaron (2015) -
Analysis of silicide / diffusion contact resistance making use of transmission line stuctures
Akheyar, Amal; Lauwers, Anne; Lindsay, Richard; de Potter de ten Broeck, Muriel; Tempel, Georg; Maex, Karen (2002) -
Applications of Ni-based silicides to 45 nm CMOS and beyond
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Pawlak, Malgorzata; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Kottantharayil, Anil; Pourtois, Geoffrey; Lindsay, Richard; Maex, Karen (2004) -
Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
Kim, Young-Chang; Baklanov, Mikhaïl; Conard, Thierry; de Potter de ten Broeck, Muriel; Vanhaelemeersch, Serge (1999) -
CMOS compatible anodization process for low cost high density capacitors
Detalle, Mikael; Rakowski, Michal; Potoms, Goedele; Mercha, Abdelkarim; de Potter de ten Broeck, Muriel; Phommahaxay, Alain; Sabuncuoglu Tezcan, Deniz; Soussan, Philippe (2010) -
CMOS compatible anodization process for low cost high density capacitors
Detalle, Mikael; Rakowski, Michal; Potoms, Goedele; Mercha, Abdelkarim; de Potter de ten Broeck, Muriel; Phommahaxay, Alain; Sabuncuoglu Tezcan, Deniz; Soussan, Philippe (2010) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Akheyar, Amal; Lauwers, Anne; Kittl, Jorge; de Potter de ten Broeck, Muriel; Chamirian, Oxana; Jonckheere, Rik; Leunissen, Peter; Van Dal, Mark; Lindsay, Richard; Tempel, Georg; Maex, Karen (2003) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25 μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Stucchi, Michele; Vrancken, Christa; Deweerdt, Bruno; Maex, Karen (1999) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Jin, S.; Bender, Hugo; Stucchi, Michele; Vrancken, Evi; Deweerdt, Bruno; Maex, Karen (2000) -
Control and impact of processing ambient during rapid thermal silicidation
Maex, Karen; Kondoh, Eiichi; Lauwers, Anne; Steegen, An; de Potter de ten Broeck, Muriel; Besser, Paul; Proost, Joris (1998) -
Design issues and cosiderations for low-cost 3D TSV IC technology
Van der Plas, Geert; Limaye, Paresh; Mercha, Abdelkarim; Oprins, Herman; Torregiani, Cristina; Thijs, Steven; Linten, Dimitri; Stucchi, Michele; Guruprasad, Katti; Velenis, Dimitrios; Shinichi, Domae; Cherman, Vladimir; Vandevelde, Bart; Simons, Veerle; De Wolf, Ingrid; Labie, Riet; Perry, Dan; Bronckers, Stephane; Minas, Nikolaos; Cupak, Miroslav; Ruythooren, Wouter; Van Olmen, Jan; Phommahaxay, Alain; de Potter de ten Broeck, Muriel; Opdebeeck, Ann; Rakowski, Michal; De Wachter, Bart; Dehan, Morin; Nelis, Marc; Agarwal, Rahul; Dehaene, Wim; Travaly, Youssef; Marchal, Pol; Beyne, Eric (2010) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2008) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2009) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2001) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2002) -
Effect of implantation oxide on the silicidation of narrow diffused and poly-lines
Naem, Abdalla; Lauwers, A.; de Potter de ten Broeck, Muriel; Maex, Karen (1997)