Browsing by author "Tinck, Stefan"

Comparison of CF4, CHF3, and CH2F2 plasmas used for wafer processing

Tinck, Stefan; Milenin, Alexey; Bogaerts, Annemie (2012)

Computer simulations of SiCl4/O2 ICP discharges used for coatings deposition or mask damage recovery

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2012)

Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma: Modeling and experimental investigation

Samara, Vladimir; Van Laer, Koen; Tinck, Stefan; de Marneffe, Jean-Francois; Bogaerts, Annemie (2013)

Influence of the top chamber window temperature on the STI etch process

Shamiryan, Denis; Danilkin, Evgeny; Tinck, Stefan; Klick, Michael; Milenin, Alexey; Baklanov, Mikhaïl; Boullart, Werner (2010)

Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasma–surface simulations and experiments

Tinck, Stefan; Boullart, Werner; Bogaerts, Annemie (2009)

Layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma: a modeling investigation

Tinck, Stefan; Altamirano Sanchez, Efrain; De Schepper, Peter; Bogaerts, Annemie (2014)

Mechanisms for plasma cryogenic etching of porous materials

Zhang, Quan-Zi; Tinck, Stefan; de Marneffe, Jean-Francois; Zhang, Liping; Bogaerts, Annemie (2017)

Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime

Zhang, Yu-Ru; Tinck, Stefan; De Schepper, Peter; Wang, You-Nian; Bogaerts, Annemie (2015)

Modeling Ar/Cl2/O2 and Ar/SiH4/O2 Inductively Coupled Plasmas used for anisotropic etching of silicon and deposition of SiOx

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2010)

Modeling fluorocarbon plasmas used for etching of Si

Tinck, Stefan; Milenin, Alexey; Bogaerts, Annemie (2013)

Modeling Sicl4/O2 plasmas used for depositing SiO2 coatings or mask recovery

Tinck, Stefan; Boullart, Werner; Bogaerts, Annemie (2012)

Modeling the influence of gas composition in an Ar/Cl2/O2 inductively coupled plasma used for STI etching

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2010)

Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching

Gul, Banat; Tinck, Stefan; De Schepper, Peter; Rehman, Aman-ur (2015)

Simulating plasma + surface processes for the etching of silicon wtih an Ar/Cl2/O2 inductively coupled plasma

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2011)

Simulation of Ar/Cl2/O2 inductively coupled plasmas used for anisotropic etching of silicon

Tinck, Stefan; Bogaerts, Annemie; Boullart, Werner (2009)

Simultaneous etching and deposition processes during the etching of silicon with a Cl(2)/O(2)/Ar inductively coupled plasma

Tinck, Stefan; Bogaerts, A.; Shamiryan, Denis (2011)