Browsing by author "Rzepa, Gerhard"
Now showing items 1-20 of 31
-
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, Ben; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Vaisman Chasin, Adrian; Linten, Dimitri; Parvais, Bertrand; Catthoor, Francky; Rzepa, Gerhard; Waltl, Michael; Grasser, Tibor (2018) -
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
Thesberg, Mischa; Schanovsky, Franz; Zhao, Ying; Karner, Markus; Gonzalez-Medina, Jose Maria; Stanojevic, Zlatan; Vaisman Chasin, Adrian; Rzepa, Gerhard (2024) -
Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling
Wu, Zhicheng; Franco, Jacopo; Claes, Dieter; Rzepa, Gerhard; Roussel, Philippe; Collaert, Nadine; Groeseneken, Guido; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019) -
Border trap based modeling of SiC transistor transfer characteristics
Tyaginov, Stanislav; Jech, Markus; Rzepa, Gerhard; Grill, Alexander; El-Sayed, Al-Moatasem; Pobegen, Gregor; Makarov, Alexander; Grasser, Tibor (2018) -
BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors
Vaisman Chasin, Adrian; Franco, Jacopo; Kaczer, Ben; Putcha, Vamsi; Weckx, Pieter; Ritzenthaler, Romain; Mertens, Hans; Horiguchi, Naoto; Linten, Dimitri; Rzepa, Gerhard (2017) -
BTI reliability improvement strategies in low thermal budget gate dtacks for 3D sequential integration
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Vandooren, Anne; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Hellings, Geert; Brus, Stephan; Cott, Daire; De Heyn, Vincent; Groeseneken, Guido; Horiguchi, Naoto; Ryckaert, Julien; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2018-12) -
Characterization and modeling of reliability issues in nanoscale devices
Rzepa, Gerhard; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2015) -
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Franco, Jacopo; Putcha, Vamsi; Vais, Abhitosh; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Rzepa, Gerhard; Roussel, Philippe; Groeseneken, Guido; Heyns, Marc; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2017) -
Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet Technology
Gaddemane, Gautam; Bhuwalka, Krishna K.; Matagne, Philippe; Rzepa, Gerhard; Van de Put, Maarten; Santermans, Sybren; Baumgartner, Oskar; Wu, Hao; Hellings, Geert (2022) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018) -
Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Waldhoer, Dominic; Schleich, Christian; Michl, Jakob; Grill, Alexander; Claes, Dieter; Karl, Alexander; Knobloch, Theresia; Rzepa, Gerhard; Franco, Jacopo; Kaczer, Ben; Waltl, Michael; Grasser, Tibor (2023) -
Complete extraction of defect bands responsible for instabilities in n and pFinFETs
Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Kaczer, Ben; Franco, Jacopo; Chiarella, Thomas; Horiguchi, Naoto; Grasser, Tibor (2016) -
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Grasser, Tibor; Waltl, Michael; Wimmer, Yannick; Goes, Wolfgang; Kosik, R.; Rzepa, Gerhard; Resinger, Hans; Pobegen, Gregor; El-Sayed, A.; Shluger, A.; Kaczer, Ben (2015) -
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Jech, Markus; Ulmann, Bianka; Rzepa, Gerhard; Tyaginov, Stanislav; Grill, Alexander; Waltl, Michael; Jabs, Dominic; Jungemann, Christoph; Grasser, Tibor (2019) -
Improved PBTI reliability in junction-less nFETs fabricated at low thermal budget for 3D sequential integration
Wu, Zhicheng; Franco, Jacopo; Vandooren, Anne; Kaczer, Ben; Roussel, Philippe; Rzepa, Gerhard; Linten, Dimitri; Groeseneken, Guido (2018) -
Low thermal budget dual-dipole gate stacks engineered for sufficient BTI reliability in novel integration schemes
Franco, Jacopo; Wu, Zhicheng; Rzepa, Gerhard; Vandooren, Anne; Arimura, Hiroaki; Claes, Dieter; Horiguchi, Naoto; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2019-12) -
Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs
Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2015) -
Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Jech, Markus; Rott, Gunnar; Reisinger, Hans; Tyaginov, Stanislav; Rzepa, Gerhard; Grill, Alexander; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2020) -
Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Vasilev, Alexander; Jech, Markus; Grill, Alexander; Rzepa, Gerhard; Schleich, Christian; Makarov, Alexander; Pobegen, Gregor; Grasser, Tibor; Waltl, Michael; Tyaginov, Stanislav (2020) -
Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
Waltl, Michael; Grill, Alexander; Rzepa, Gerhard; Goes, Wolfgang; Franco, Jacopo; Kaczer, Ben; Mitard, Jerome; Grasser, Tibor (2016)