Browsing by author "Breuil, Laurent"
Now showing items 21-40 of 89
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Enabling 3D NAND Trench Cells for Scaled Flash Memories
Rachidi, Sana; Ramesh, Siva; Breuil, Laurent; Tao, Zheng; Verreck, Devin; Donadio, Gabriele Luca; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2023) -
Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner
Ramesh, Siva; Ajaykumar, Arjun; Bastos, Joao; Breuil, Laurent; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Ragnarsson, Lars-Ake; Schleicher, Filip; Jossart, Nico; Stiers, Jimmy; Van den Bosch, Geert; Rosmeulen, Maarten (2020) -
Evaluation and solutions for P/E window instability induced by electron trapping in high-k inter-gate dielectrics of flash memory cells
Tang, Baojun; Zhang, Weidong; Degraeve, Robin; Breuil, Laurent; Blomme, Pieter; Zhang, Jianfu; Ji, Zhigang; Zahid, Mohammed; Toledano Luque, Maria; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
Subirats, Alexandre; Arreghini, Antonio; Capogreco, Elena; Delhougne, Romain; Tan, Chi Lim; Hikavyy, Andriy; Breuil, Laurent; Degraeve, Robin; Putcha, Vamsi; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Vandelli, Luca; Padovani, Andrea; Breuil, Laurent; Larcher, Luca; De Meyer, Kristin; Van Houdt, Jan (2010) -
Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Breuil, Laurent; Cacciato, Antonio; Rothschild, Aude; Jurczak, Gosia; Van Houdt, Jan; De Meyer, Kristin (2009) -
Explanation of anomalous erase behaviour and the associated device instability in TANOS Flash using a new trap characterization technique
Degraeve, Robin; Zahid, Mohammed; Van den Bosch, Geert; Blomme, Pieter; Breuil, Laurent; Kaczer, Ben; Mercuri, Marco; Rothschild, Aude; Cacciato, Antonio; Jurczak, Gosia; Groeseneken, Guido; Van Houdt, Jan (2009-10) -
Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance
Ronchi, Nicolo; Ragnarsson, Lars-Ake; Breuil, Laurent; Banerjee, Kaustuv; McMitchell, Sean; O'Sullivan, Barry; Milenin, Alexey; Kundu, Shreya; Pak, Murat; Van den Bosch, Geert; Van Houdt, Jan (2021) -
First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application
Banerjee, Kaustuv; Breuil, Laurent; Milenin, Alexey; Pak, Murat; Stiers, Jimmy; McMitchell, Sean; Di Piazza, Luca; Van den Bosch, Geert; Van Houdt, Jan (2021) -
First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices
Delhougne, Romain; Arreghini, Antonio; Rosseel, Erik; Hikavyy, Andriy; Vecchio, Emma; Zhang, Liping; Pak, Murat; Nyns, Laura; Raymaekers, Tom; Jossart, Nico; Breuil, Laurent; Vadakupudhu Palayam, Senthil; Tan, ChiLim; Van den Bosch, Geert; Furnemont, Arnaud (2018) -
First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices
Ajaykumar, Arjun; Breuil, Laurent; Katcko, Kostantine; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Ramesh, Siva; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Stiers, Jimmy; Rosmeulen, Maarten; Van den Bosch, Geert (2021) -
First-principles study of oxygen and aluminum defects in $b-Si3N4: Compensation and charge trapping
Grillo, Maria Elena; Elliott, Simon D.; Rodriguez, Jesus; Anez, Rafael; Coll, David Santiago; Suhane, Amit; Breuil, Laurent; Arreghini, Antonio; Degraeve, Robin; Shariq, Ahmed; Beyer, Volkhard; Czernohorsky, Malte (2014) -
HfO2 based High-k inter-gate dielectrics for planar NAND flash memory
Breuil, Laurent; Lisoni, Judit; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2014) -
High performance THANVaS memories for MLC charge trap NAND flash
Suhane, Amit; Van den Bosch, Geert; Arreghini, Antonio; Breuil, Laurent; Cacciato, Antonio; Zahid, Mohammed; Debusschere, Ingrid; De Meyer, Kristin; Van Houdt, Jan (2011) -
High-k dielectrics and high work function metals for hybrid floating gate NAND flash applications
Lisoni, Judit; Breuil, Laurent; Blomme, Pieter; De Stefano, Francesca; Afanasiev, Valeri; Van den Bosch, Geert; Van Houdt, Jan (2014) -
High-k dielectrics for hybrid floating gate memory applications
Lisoni, Judit; Breuil, Laurent; Blomme, Pieter; Van Houdt, Jan (2012) -
High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash
Lisoni, Judit; Breuil, Laurent; Nyns, Laura; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013) -
High-k gadolinium and aluminum scandates for hybrid floating gate NAND flash
Lisoni, Judit; Breuil, Laurent; Nyns, Laura; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013) -
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction
Breuil, Laurent; Nyns, Laura; Rachidi, Sana; Banerjee, Kaustuv; Arreghini, Antonio; Bastos, Joao; Ramesh, Siva; Van den Bosch, Geert; Rosmeulen, Maarten (2022) -
Highly scaled vertical cylindrical SONOS cell with bi-layer poly-silicon channel for 3D NAND flash memory
Van den Bosch, Geert; Kar, Gouri Sankar; Blomme, Pieter; Arreghini, Antonio; Cacciato, Antonio; Breuil, Laurent; De Keersgieter, An; Paraschiv, Vasile; Vrancken, Christa; Douhard, Bastien; Richard, Olivier; Van Aerde, Steven; Debusschere, Ingrid; Van Houdt, Jan (2011)