Browsing by author "Larcher, Luca"
Now showing items 1-16 of 16
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A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Pavan, Paolo; Van Houdt, Jan (2011) -
A sensitivity map-based approach to profile defects in MIM capacitors from I-V, C-V and G-V measurements
Padovani, Andrea; Kaczer, Ben; Pesic, Milan; Belmonte, Attilio; Popovici, Mihaela Ioana; Nyns, Laura; Linten, Dimitri; Afanasiev, Valeri; Shlyakhov, Ilya; Lee, Younggon; Park, Hokyung; Larcher, Luca (2019) -
Defect spectroscopy from electrical measurements: a simulation based technique
Larcher, Luca; Padovani, Andrea; Pramanik, Dipankar; Kaczer, Ben; Palumbo, Felix (2018) -
Device-to-Materials Pathway for Electron Traps Detection in Amorphous GeSe-Based Selectors
Slassi, Amine; Medondjio, Linda-Sheila; Padovani, Andrea; Tavanti, Francesco; He, Xu; Clima, Sergiu; Garbin, Daniele; Kaczer, Ben; Larcher, Luca; Ordejon, Pablo; Calzolari, Arrigo (2023) -
Electron trapping in ferroelectric HfO2
Izmailov, Roman A.; Strand, Jack W.; Larcher, Luca; Shluger, Alexander L.; Afanas'ev, Valeri V.; O'Sullivan, Barry (2021) -
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Van Houdt, Jan (2012) -
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Vandelli, Luca; Padovani, Andrea; Breuil, Laurent; Larcher, Luca; De Meyer, Kristin; Van Houdt, Jan (2010) -
Extraction of the defect distributions in DRAM capacitor using I–V and C–V sensitivity maps
Sereni, Gabriele; Larcher, Luca; Kaczer, Ben; Popovici, Mihaela Ioana (2016) -
Low leakage stoichiometric SrTiO3 dielectric for advanced metal-insulator-metal capacitors
Popovici, Mihaela Ioana; Kaczer, Ben; Afanasiev, Valeri; Sereni, Gabriele; Larcher, Luca; Redolfi, Augusto; Van Elshocht, Sven; Jurczak, Gosia (2016) -
Probing defects generation during stress in high- $j/metal gate FinFETs by random telegraph noise characterization
Puglisi, Francesco Maria; Costantini, Felipe; Kaczer, Ben; Larcher, Luca; Pavan, Paolo (2016) -
Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability
Vandelli, Luca; Arreghini, Antonio; Padovani, Andrea; Larcher, Luca; Van den Bosch, Geert; Della Marca, Vincenzo; Pavan, Paolo; Jurczak, Gosia; Van Houdt, Jan (2010) -
Scaling perspective and reliability of conductive filament formation in ultra-scaled HfO2 resistive random access memory
Puglisi, F.M.; Celano, Umberto; Padovani, A.; Vandervorst, Wilfried; Larcher, Luca; Pavan, P. (2017) -
SrTiO3 for sub-20 nm DRAM technology nodes – characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Resinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2014) -
SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Reisinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2015) -
Standards for the Characterization of Endurance in Resistive Switching Devices
Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian (2021) -
Understanding and variability of lateral charge migration in 3D CT-NAND flash with and without band-gap engineered barriers
Padovani, Andrea; Pesic, Milan; Anik Kumar, Mondol; Blomme, Pieter; Subirats, Alexandre; Vadakupudhu Palayam, Senthil; Baten, Zunaid; Larcher, Luca; Van den Bosch, Geert (2019)