Browsing by author "Takakura, Kenichiro"
Now showing items 1-15 of 15
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Frontiers in low-frequency noise research in advanced semiconductor devices
Simoen, Eddy; Veloso, Anabela; O'Sullivan, Barry; Takakura, Kenichiro; Claeys, Cor (2021) -
Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs
Nakashima, Toshiyuki; Idemoto, Tatsuya; Tsunoda, Isao; Takakura, Kenichiro; Yoneoka, Masashi; Ohyama, Hidenori; Yoshino, Kenji; Simoen, Eddy; Claeys, Cor (2012) -
Improvement of the crystalline quality of β-Ga2O3 films by high-temperature annealing
Takahara, Motoki; Funasaki, Suguru; Kudou, Jyun; Tsunoda, Isao; Takakura, Kenichiro; Ohyama, Hidenori; Nakashima, Toshiyuki; Shibuya, Mutsuo; Murakami, Katsuya; Simoen, Eddy; Claeys, Cor (2012) -
Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content
Nakashima, Toshiyuki; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Gonzalez, Mireia B; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013) -
Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation
Takakura, Kenichiro; Ogata, H.; Inoue, T.; Yoneoka, M.; Tsunoda, I.; Simoen, Eddy; Claeys, Cor (2015) -
Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices
Tsunoda, Isao; Nakashima, Toshiyuki; Naka, Noboyuki; Idemoto, Tatsuya; Yoneoka, Masahi; Takakura, Kenichiro; Yoshino, Kenji; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Ohyama, Hidenori (2012) -
Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation
Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, AliReza; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2020) -
Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
Simoen, Eddy; Hsu, Brent; Yu, Hao; Wang, Hongyue; Zhao, Ming; Takakura, Kenichiro; Putcha, Vamsi; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020) -
Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors
Takakura, Kenichiro; Putcha, Vamsi; Simoen, Eddy; Alian, AliReza; Peralagu, Uthayasankaran; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2020) -
Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation
Takakura, Kenichiro; Goto, T.; Yoneoka, M.; Tsunoda, I.; Simoen, Eddy; Claeys, Cor (2015) -
Radiation influence on the electrical properties of n-channel UTBOX SOI GAAFETs by 2 MeV electron irradiation
Iseri, K.; Takakura, Kenichiro; Yoneoka, M.; Tsunoda, I.; Simoen, Eddy; Veloso, Anabela; Claeys, Cor (2017) -
Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations
Asai, Yuki; Hori, Masato; Yoneda, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji (2013) -
Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation
Matsuki, K.; Matsuzaki, M.; Yoneoka, M.; Tsunoda, I.; Takakura, Kenichiro; Simoen, Eddy; Veloso, Anabela; Claeys, Cor (2017) -
Thermal recovery process of electron irradiated Si1-xCx source/drain n-MOSFETs
Takakura, Kenichiro; Mori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Nakashima, Toshiyuki; Simoen, Eddy; Claeys, Cor (2015) -
XRD investigation of the crystalline quality of Sn-doped β-Ga2O3 films deposited by the RF magnetron sputtering method
Kudou, Jyun; Funasaki, Suguru; Takahara, Motoki; Takakura, Kenichiro; Ohyama, Hidenori; Nakashima, Toshiyuki; Shibuya, Mutsuo; Murakami, Katsuya; Simoen, Eddy; Claeys, Cor (2012)