Browsing by author "Barla, Kathy"
Now showing items 1-20 of 69
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1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Peter, Antony; Lee, Joon-Gon; Song, Woo-Bin; Demuynck, Steven; Chiarella, Thomas; Ragnarsson, Lars-Ake; Kubicek, Stefan; Everaert, Jean-Luc; Horiguchi, Naoto; Barla, Kathy; Kim, Daeyong; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2015) -
15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
21 nm Pitch dual-damascene BEOL process integration with full barrierless Ru metallization
Vega Gonzalez, Victor; Wilson, Chris; Paolillo, Sara; Decoster, Stefan; Mao, Ming; Versluijs, Janko; Blanco, Victor; Kesters, Els; Le, Quoc Toan; Lorant, Christophe; Varela Pedreira, Olalla; Lesniewska, Alicja; Heylen, Nancy; El-Mekki, Zaid; van der Veen, Marleen; Webers, Tomas; Vats, Hemant; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Jourdan, Nicolas; Ciofi, Ivan; Contino, Antonino; Boccardi, Guillaume; Lariviere, Stephane; De Wachter, Bart; Vancoille, Eric; Lazzarino, Frederic; Ercken, Monique; Kim, Ryan Ryoung han; Trivkovic, Darko; Croes, Kristof; Leray, Philippe; Pardons, Katrien; Barla, Kathy; Tokei, Zsolt (2019) -
A 2nd generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs
Mitard, Jerome; Witters, Liesbeth; Sasaki, Yuichiro; Arimura, Hiroaki; Schulze, Andreas; Loo, Roger; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Cott, Daire; Chiarella, Thomas; Kubicek, Stefan; Mertens, Hans; Ritzenthaler, Romain; Vrancken, Christa; Favia, Paola; Bender, Hugo; Horiguchi, Naoto; Barla, Kathy; Mocuta, Dan; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2016-06) -
A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction
Yu, Hao; Schaekers, Marc; Schram, Tom; Collaert, Nadine; De Meyer, Kristin; Horiguchi, Naoto; Thean, Aaron; Barla, Kathy (2014) -
An InGaAs/InP quantum well FinFET using the replacement fin process integrated in an RMG flow on 300mm Si substrates
Waldron, Niamh; Merckling, Clement; Guo, Weiming; Ong, Patrick; Teugels, Lieve; Ansar, Sheikh; Tsvetanova, Diana; Sebaai, Farid; van Dorp, Dennis; Milenin, Alexey; Lin, Dennis; Nyns, Laura; Mitard, Jerome; Pourghaderi, Mohammad Ali; Douhard, Bastien; Richard, Olivier; Bender, Hugo; Boccardi, Guillaume; Caymax, Matty; Heyns, Marc; Vandervorst, Wilfried; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
Atomic layer deposition of 2D transition metal dichalogenides
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Haesevoets, Karel; Meersschaut, Johan; Nuytten, Thomas; Bender, Hugo; Conard, Thierry; Verdonck, Patrick; Van Elshocht, Sven; Heyns, Marc; Barla, Kathy; Radu, Iuliana; Thean, Aaron (2015-10) -
Challenges and progresses in high-k metal gate for Silicon-based advanced CMOS transistor architecture
Horiguchi, Naoto; Ragnarsson, Lars-Ake; Mertens, Hans; Arimura, Hiroaki; Ritzenthaler, Romain; Franco, Jacopo; Schram, Tom; Dekkers, Harold; Barla, Kathy; Mocuta, Dan (2017) -
Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts
Yu, Hao; Schaekers, Marc; Barla, Kathy; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
Defect engineering for shallow n-type junctions in germanium: facts and fiction
Simoen, Eddy; Schaekers, Marc; Liu, Jinbiao; Luo, Jun; Zhao, Chao; Barla, Kathy; Collaert, Nadine (2016) -
Demonstration of direction dependent conduction through MoS2 films prepared by tunable mass transport fabrication
Chiappe, Daniele; Mongillo, Massimo; Asselberghs, Inge; El Kazzi, Salim; Caymax, Matty; Barla, Kathy; De Gendt, Stefan; Radu, Iuliana; Huyghebaert, Cedric (2016) -
Engineering the IIIV gate stack properties by optimization of the ALD process
Sioncke, Sonja; Ivanov, Tsvetan; Lin, Dennis; Franco, Jacopo; Vais, Abhitosh; Ameen, Mahmoud; Delabie, Annelies; Xie, Qi; Maes, Jan; Givens, Michael; Tang, Fu; Van Elshocht, Sven; Holsteyns, Frank; Barla, Kathy; Collaert, Nadine; Thean, Aaron; De Gendt, Stefan; Heyns, Marc (2014) -
Evaluation of the accuracy and precision of STEM and EDS metrology on horizontal GAA nanowire devices
Johanesen, Hayley; Strauss, Michael; Kenslea, Anne; Hakala, Chris; Kwakman, Laurens; Boullart, Werner; Mertens, Hans; Siew, Yong Kong; Barla, Kathy (2019) -
Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist
Lazzarino, Frederic; Paolillo, Sara; Antony, Peter; De Roest, David; Seong, TaeGeun; Wu, Yizhi; Decoster, Stefan; Rutigliani, Vito; Lorusso, Gian; Constantoudis, Vassilios; Van Elshocht, Sven; Piumi, Daniele; Barla, Kathy (2017) -
First demonstration of 15nm-WFIN inversion-mode relaxed germanium bulk nFinFET with Si-cap free RMG and NiSiGe source/drain
Mitard, Jerome; Witters, Liesbeth; Arimura, Hiroaki; Sasaki, Yuichiro; Milenin, Alexey; Loo, Roger; Hikavyy, Andriy; Eneman, Geert; Lagrain, Pieter; Mertens, Hans; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Barla, Kathy; Horiguchi, Naoto; Mocuta, Anda; Collaert, Nadine; Thean, Aaron (2014) -
First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
From fundamental insights into growth and nucleation mechanisms to area-selective deposition
Delabie, Annelies; Soethoudt, Job; Pourtois, Geoffrey; Van Elshocht, Sven; Barla, Kathy; Grillo, Fabio; Marques, Esteban; Van Ommen, Ruud (2018) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016)