Browsing by author "Van Landuyt, J."

A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon

De Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2003)

Characterisation of the local stress in CoSi2 silicided shallow trench isolation structures

Stuer, Cindy; Steegen, An; Bender, Hugo; Van Landuyt, J.; Maex, Karen (2001)

Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy

De Gryse, O.; Clauws, P.; Vanhellemont, Jan; Lebedev, O.I.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2004)

Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy

Hens, S.; Van Landuyt, J.; Bender, Hugo; Boullart, Werner; Vanhaelemeersch, Serge (2001)

Chemical and structural analysis of etching rsidue layers in semiconductor devices with energy filtering transmission electron spectroscopy

Hens, S.; Van Landuyt, J.; Bender, Hugo; Boullaert, W.; Vanhaelemeersch, Serge (2000)

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2002)

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

De Gryse, O.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Vanhellemont, Jan; Claeys, C.; Simoen, Eddy (2001)

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000)

Comparative study of structural properties and photoluminescence in InGaN layers with a high In content

Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000)

Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy

Dombrowski, Kai; Fischer, A.; Dietrich, B.; De Wolf, Ingrid; Bender, Hugo; Pochet, Sandrine; Simons, Veerle; Rooyackers, Rita; Badenes, Gonçal; Stuer, Cindy; Van Landuyt, J. (1999)

Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

Nistor, Leona; Bender, Hugo; Vantomme, Andre; Wu, Ming Fang; Van Landuyt, J.; O'Donnell, K. P.; Martin, R.; Jacobs, Koen; Moerman, Ingrid (2000)

EFTEM analysis of the interaction of CO with a fluorinated organic dielectric

Hens, S.; Van Landuyt, J.; Bender, Hugo; Lanckmans, Filip; Maex, Karen (2000)

EFTEM as a porosity metrology tool for low-k dielectrics

Hens, S.; Bender, Hugo; Van Landuyt, J.; Iacopi, Francesca; Weidner, K.; Maex, Karen (2002)

EFTEM study of plasma etched low-k Si-O-C dielectrics

Hens, S.; Bender, Hugo; Donaton, R. A.; Maex, Karen; Vanhaelemeersch, Serge; Van Landuyt, J. (2001)

Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in a HREM

Fedina, L.; Gutakovskii, A.; Aseev, A.; Van Landuyt, J.; Vanhellemont, Jan (1999)

In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates

Ghica, C.; Nistor, Leona; Bender, Hugo; Steegen, An; Lauwers, A.; Maex, Karen; Van Landuyt, J. (2001)

In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfaces

Vanhellemont, Jan; Claeys, Cor; Van Landuyt, J. (1995)