Browsing by author "Meneghini, Matteo"
Now showing items 1-20 of 56
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AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction
Zanoni, Enrico; Meneghini, Matteo; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio (2013) -
Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015) -
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Li, Xiangdong; Zhao, Ming; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Breakdown investigation in GaN-based MIS-HEMT devices
Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014) -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization
Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2021) -
Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions
Zanoni, Enrico; Meneghini, Matteo; Stocco, Antonio; Marcon, Denis; Bertin, Marco; Silvestri, Riccardo; Ferretti, Marco; Rampazzo, Fabiana; Meneghesso, Gaudenzio (2012) -
Degradation of AlGaN/GaN HEMTs below the "critical voltage": a time-dependent analysis
Meneghini, Matteo; Stocco, Antonio; Bertin, M; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2012) -
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface
Meneghini, Matteo; Bertin, Marco; Stocco, Antonio; dal Santo, Gabriele; Marcon, Denis; Malinowski, Pawel; Chini, Alessandro; Meneghesso, Gaudenzio; Zanoni, Enrico (2013) -
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Meneghini, Matteo; Rossetto, Isabella; Borga, Matteo; Canato, Eleonora; De Santi, Carlo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Decoutere, Stefaan (2017) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model
Meneghini, Matteo; Stocco, Antonio; Bertini, Marco; Ronchi, Nicolò; Chini, Alessandro; Marcon, Denis; Meneghesso, Gaudenzio; Zanoni, Enrico (2011) -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process
Stoffels, Steve; Geens, Karen; Li, Xiangdong; Wellekens, Dirk; You, Shuzhen; Zhao, Ming; Borga, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan (2018) -
Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress
Ruzzarin, Maria; Meneghini, Matteo; Rossetto, Isabella; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016) -
Evidence of time-dependent vertical breakdown in GaN-on-Si HEMTs
Borga, Matteo; Meneghini, Matteo; Rossetto, Isabella; Stoffels, Steve; Posthuma, Niels; Van Hove, Marleen; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Exploration of gate trench module for vertical GaN devices
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020) -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Gate conduction mechanisms and lifetime modeling of p-gate AlGaN/GaN high-electron-mobility transistors
Stockman, Arno; Masin, Fabrizio; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Bakeroot, Benoit; Moens, Peter (2018) -
Gate module study for performance improvement in vertical GaN device
Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021) -
Gate stability of GaN-based HEMTs with p-type gate
Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016)