Browsing by author "Lazzarino, Frederic"

Now showing items 1-20 of 88

    • 21 nm Pitch dual-damascene BEOL process integration with full barrierless Ru metallization 

      Vega Gonzalez, Victor; Wilson, Chris; Paolillo, Sara; Decoster, Stefan; Mao, Ming; Versluijs, Janko; Blanco, Victor; Kesters, Els; Le, Quoc Toan; Lorant, Christophe; Varela Pedreira, Olalla; Lesniewska, Alicja; Heylen, Nancy; El-Mekki, Zaid; van der Veen, Marleen; Webers, Tomas; Vats, Hemant; Rynders, Luc; Cupak, Miroslav; Lee, Jae Uk; Drissi, Youssef; Halipre, Luc; Charley, Anne-Laure; Verdonck, Patrick; Witters, Thomas; Van Gompel, Sander; Kimura, Yosuke; Jourdan, Nicolas; Ciofi, Ivan; Contino, Antonino; Boccardi, Guillaume; Lariviere, Stephane; De Wachter, Bart; Vancoille, Eric; Lazzarino, Frederic; Ercken, Monique; Kim, Ryan Ryoung han; Trivkovic, Darko; Croes, Kristof; Leray, Philippe; Pardons, Katrien; Barla, Kathy; Tokei, Zsolt (2019)

    • A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node 

      Redolfi, Augusto; Goux, Ludovic; Jossart, Nico; Yamashita, Fumiko; Nishimura, Eiichi; Urayama, Daisuke; Fujimoto, Kiwamu; Witters, Thomas; Lazzarino, Frederic; Jurczak, Gosia (2015)

    • Active area patterning for CFET - Nanosheet etch 

      Brissonneau, Vincent; Koo, Il Gyo; Hosseini, Maryam; Batuk, Dmitry; Veloso, Anabela; Mannaert, Geert; Lazzarino, Frederic (2024)

    • Advances and challenges in ultra low-k patterning 

      Xu, Kaidong; Souriau, Laurent; Lazzarino, Frederic; de Marneffe, Jean-Francois; Baklanov, Mikhaïl; Boullart, Werner (2012)

    • Assessment of STI dry etch process variability by means of dynamic time warping technique 

      Milenin, Alexey; Chan, BT; Lazzarino, Frederic (2023)

    • Buried power rail integration with FinFETs for ultimate CMOS scaling 

      Gupta, Anshul; Varela Pedreira, Olalla; Arutchelvan, Goutham; Zahedmanesh, Houman; Devriendt, Katia; Hanssen, Frederik; Tao, Zheng; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, Noemie; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min-Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Cousserier, Joris; Yakimets, Dmitry; Lazzarino, Frederic; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Jaysankar, Manoj; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Boemmels, Juergen; Demuynck, Steven; Tokei, Zsolt; Horiguchi, Naoto (2020)

    • Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node 

      Gupta, Anshul; Mertens, Hans; Tao, Zheng; Demuynck, Steven; Boemmels, Juergen; Arutchelvan, Goutham; Devriendt, Katia; Varela Pedreira, Olalla; Ritzenthaler, Romain; Wang, Shouhua; Radisic, Dunja; Kenis, Karine; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Chan, BT; Zahedmanesh, Houman; Subramanian, Sujith; Schleicher, Filip; Hopf, Toby; Peter, Antony; Rassoul, Nouredine; Debruyn, Haroen; Demonie, Ingrid; Siew, Yong Kong; Chiarella, Thomas; Briggs, Basoene; Zhou, Daisy; Rosseel, Erik; De Keersgieter, An; Capogreco, Elena; Dentoni Litta, Eugenio; Boccardi, Guillaume; Baudot, Sylvain; Mannaert, Geert; Bontemps, N.; Sepulveda Marquez, Alfonso; Mertens, Sofie; Kim, Min Soo; Dupuy, Emmanuel; Vandersmissen, Kevin; Paolillo, Sara; Yakimets, Dmitry; Chehab, Bilal; Favia, Paola; Drijbooms, Chris; Cousserier, Joris; Jaysankar, Manoj; Lazzarino, Frederic; Morin, Pierre; Altamirano Sanchez, Efrain; Mitard, Jerome; Wilson, Chris; Holsteyns, Frank; Tokei, Zsolt; Horiguchi, Naoto (2020)

    • Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond 

      Gupta, Anshul; Varela Pedreira, Olalla; Tao, Zheng; Mertens, Hans; Radisic, Dunja; Jourdan, Nicolas; Devriendt, Katia; Heylen, Nancy; Wang, Shouhua; Chehab, Bilal; Jang, Doyoung; Hellings, Geert; Sebaai, Farid; Lorant, Christophe; Teugels, Lieve; Peter, Antony; Chan, BT; Schleicher, Filip; Demonie, Ingrid; Marien, Philippe; Sepulveda Marquez, Alfonso; Richard, Olivier; Nagesh, Nishanth; Lesniewska, Alicja; Lazzarino, Frederic; Ryckaert, Julien; Morin, Pierre; Altamirano Sanchez, Efrain; Murdoch, Gayle; Boemmels, Juergen; Demuynck, Steven; Na, Myung Hee; Tokei, Zsolt; Biesemans, Serge; Dentoni Litta, Eugenio; Horiguchi, Naoto (2020)

    • Comparative analysis of the factors leading to low-k degradation during the integration process 

      Zotovich, Alexey; Krishtab, Mikhail; Lazzarino, Frederic; Baklanov, Mikhaïl (2014)

    • Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm node 

      Bekaert, Joost; Van Look, Lieve; Truffert, Vincent; Lazzarino, Frederic; Vandenberghe, Geert; Reybrouck, Mario; Tarutani, Shinji (2010-12)

    • Demonstration of an N7 integrated fab process for metal oxide EUV photoresist 

      De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Yamashita, Fumiko; Stowers, Jason; Meyers, Steven; Grenville, Andrew; Luong, Vinh; Parnell, Doni; Clark, Benjamin L. (2016)

    • Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology 

      Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12)

    • Direct etched Cu characterization for advanced interconnects 

      Wen, Liang Gong; Yamashita, Fumiko; Tang, Baojun; Croes, Kristof; Tahara, Shigeru; Shimoda, Keiichi; Maeshiro, Takeru; Nishimura, Eiichi; Lazzarino, Frederic; Ciofi, Ivan; Boemmels, Juergen; Tokei, Zsolt (2015)

    • Direct metal etch evaluation for advanced interconnect 

      Paolillo, Sara; Lazzarino, Frederic; Rassoul, Nouredine; Wan, Danny; Piumi, Daniele; Tokei, Zsolt (2017)

    • Direct metal etch for advanced interconnect 

      Paolillo, Sara; Wan, Danny; Lazzarino, Frederic; Rassoul, Nouredine; Piumi, Daniele; Tokei, Zsolt (2018)

    • Dynamic Time Warping for Time Series Data Analysis of STI Etching 

      Milenin, Alexey; Chan, BT; Lazzarino, Frederic (2022-11)

    • Economics of semiconductor scaling – a cost analysis for advanced technology node 

      Mallik, Arindam; Ryckaert, Julien; Kim, Ryan Ryoung han; Debacker, Peter; Decoster, Stefan; Lazzarino, Frederic; Ritzenthaler, Romain; Horiguchi, Naoto; Verkest, Diederik; Mocuta, Anda (2019)

    • Effect of precoat on the sidewall profile of through silicon via's 

      Babaei Gavan, Khashayar; Lazzarino, Frederic; Brouri, Mohand; Tutunjyan, Nina; de Marneffe, Jean-Francois; Kunnen, Eddy; Xu, Kaidong (2013)

    • Enabling 3-level High Aspect Ratio Supervias for 3nm nodes and below 

      Montero Alvarez, Daniel; Vega Gonzalez, Victor; Feurprier, Yannick; Varela Pedreira, Olalla; Oikawa, Noriaki; Martinez Alanis, Gerardo Tadeo; Batuk, Dmitry; Puliyalil, Harinarayanan; Versluijs, Janko; De Coster, Hanne; Bazzazian, Nina; Jourdan, Nicolas; Kumar, Kaushik; Lazzarino, Frederic; Murdoch, Gayle; Park, Seongho; Tokei, Zsolt (2022-06-29)

    • Etch challenges brought by the metal hardmask approach for advanced contact patterning with fluorocarbon-based plasma 

      de Marneffe, Jean-Francois; Goossens, Danny; Shamiryan, Denis; Lazzarino, Frederic; Struyf, Herbert; Boullart, Werner (2008)