Browsing by imec author "96aaa64e938e223bc994751727550abb316e187c"
Now showing items 21-40 of 84
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Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band alignment between (100)Si and Hf-based complex metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of nano-laminate structure using grazing incidence XRD and ATR-FTIR
Zhao, Chao; De Gendt, Stefan; Caymax, Matty; Heyns, Marc; Cosnier, Vincent; Maes, Jan; Roebben, G.; Van der Biest, O. (2003) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Effect of Al-content and post deposition annealing on the electrical properties of ultra-thin HfAlxOy layers
Carter, Richard; Tsai, Wilman; Young, Edward; Maes, Jan; Chen, P.J.; Delabie, Annelies; Zhao, Chao; De Gendt, Stefan; Heyns, Marc (2003) -
Engineering ALCVD HfSiO gate stacks for LSTP applications
Swerts, Johan; Deweerd, Wim; De Witte, Hilde; Maes, Jan; Wilk, Glenn; Delabie, Annelies (2005) -
Engineering the IIIV gate stack properties by optimization of the ALD process
Sioncke, Sonja; Ivanov, Tsvetan; Lin, Dennis; Franco, Jacopo; Vais, Abhitosh; Ameen, Mahmoud; Delabie, Annelies; Xie, Qi; Maes, Jan; Givens, Michael; Tang, Fu; Van Elshocht, Sven; Holsteyns, Frank; Barla, Kathy; Collaert, Nadine; Thean, Aaron; De Gendt, Stefan; Heyns, Marc (2014) -
Evaluation of Nb(Si)N as metal gate material
Van Hoornick, Nausikaa; De Witte, Hilde; Witters, Thomas; Zhao, Chao; Conard, Thierry; Huatori, H.; Swerts, Johan; Schram, Tom; Maes, Jan; De Gendt, Stefan; Heyns, Marc (2005) -
Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks
Maes, Jan; Machkaoutsan, Vladimir; Pierreux, Dieter; Blomberg, Tom; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Delabie, Annelies; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake (2010) -
Extreme scaled gate dielectrics by using ALD Hf-based composite materials
Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009) -
Extreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures
Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Caymax, Matty; Brijs, Bert; Carter, Richard; Claes, Martine; Conard, Thierry; De Gendt, Stefan; Delabie, Annelies; Heyns, Marc; Richard, Olivier; Vandervorst, Wilfried; Zhao, Chao; Maes, Jan; Chen, Jerry; Cosnier, Vincent; Green, Martin; Kaushik, Vidya; Kluth, Jon; Tsai, Wilman (2002) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012-09) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012) -
High-k dielectrics and metal gates for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, W.; Clima, Sergiu; Pourtois, Geoffrey; Detavernier, C.; Knaepen, W.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Manger, D.; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
High-k dielectrics and metal gates for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, W.; Clima, Sergiu; Pourtois, Geoffrey; Knaepen, W.; Detavernier, C.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Fischer, P.; Maes, Jan; Manger, D.; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009)