Browsing by author "Vandeweyer, Tom"
Now showing items 21-40 of 65
-
Dense lines created by spacer DPT scheme: process control by local dose adjustment using advanced scanner control
Finders, Jo; Dusa, Mircea; Vleeming, Bert; Fliervoet, Timon; Hepp, Birgitt; Megens, henry; Groenendijk, Remco; Quaedackers, John; Mos, Evert; Leewis, Christian; Bornebroek, Frank; Maenhoudt, Mireille; Leblans, Marc; Vandeweyer, Tom; Murdoch, Gayle; Altamirano Sanchez, Efrain (2009) -
Development of a contact edge roughness measurement methodology and its sources in 193nm patterning
Vandeweyer, Tom; Maerhoudt,; de Marneffe, Jean-Francois; Dirksen, Peter (2003) -
Double patterning for 32-nm and below: an update
Finders, Jo; Dusa, Mircea; Vleeming, Bert; Hepp, Birgitt; Megens, Henry; Maenhoudt, Mireille; Cheng, Shaunee; Vandeweyer, Tom (2008) -
Double patterning lithography for 32 nm: critical dimensions uniformity and overlay control considerations
Finders, Jo; Dusa, Mircea; Vleeming, Bert; Hepp, Birgitt; Maenhoudt, Mireille; Cheng, Shaunee; Vandeweyer, Tom (2009) -
Double patterning process development at IMEC
Maenhoudt, Mireille; Vangoidsenhoven, Diziana; Vandeweyer, Tom; Gronheid, Roel; Versluijs, Janko; Miller, Andy (2008) -
Doubling or quadrupling MuGFET Fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency
Rooyackers, Rita; Augendre, Emmanuel; Degroote, Bart; Collaert, Nadine; Nackaerts, Axel; Dixit, Abhisek; Vandeweyer, Tom; Pawlak, Bartek; Ercken, Monique; Kunnen, Eddy; Dilliway, Gabriela; Leys, Frederik; Loo, Roger; Jurczak, Gosia; Biesemans, Serge (2007) -
Dry etching patterning requirements for multi-gate devices
Altamirano Sanchez, Efrain; Vandeweyer, Tom; Demand, Marc; Boullart, Werner (2013-09) -
Dummy design characterization for STI CMP with fixed abrasive
Tsvetanova, Diana; Devriendt, Katia; Ong, Patrick; Vandeweyer, Tom; Delande, Tinne; Chew, Soon Aik; Horiguchi, Naoto; Struyf, Herbert (2014-11) -
Gate double patterning strategies for 10nm node FinFET devices
Hody, Hubert; Paraschiv, Vasile; Hellin, David; Vandeweyer, Tom; Boccardi, Guillaume; Xu, Kaidong (2014) -
Gatestacks for scalable high-performance FinFETs
Vellianitis, Georgios; Van Dal, Mark; Witters, Liesbeth; Curatola, Gilberto; Doornbos, Gerben; Collaert, Nadine; Jonville, C.; Torregiani, Cristina; Lai, Li-Shyue; Petry, Jasmine; Pawlak, Bartek; Duffy, Ray; Demand, Marc; Beckx, Stephan; Mertens, Sofie; Delabie, Annelies; Vandeweyer, Tom; Delvaux, Christie; Leys, Frederik; Hikavyy, Andriy; Rooyackers, Rita; Kaiser, M.; Weemaes, R.G.R.; Voogt, F.; Roberts, H.; Donnet, D.; Biesemans, Serge; Jurczak, Gosia; Lander, Rob (2007) -
Ge-source vertical tunnel FETs using a novel replacement-source integration scheme
Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Walke, Amey; Simoen, Eddy; Devriendt, Katia; Locorotondo, Sabrina; Demand, Marc; Bryce, George; Loo, Roger; Hikavyy, Andriy; Vandeweyer, Tom; Huyghebaert, Cedric; Collaert, Nadine; Thean, Aaron (2014-12) -
High performance 70 nm germanium pMOSFETs with boron LDD implants
Hellings, Geert; Mitard, Jerome; Eneman, Geert; De Jaeger, Brice; Brunco, David; Shamiryan, Denis; Vandeweyer, Tom; Meuris, Marc; Heyns, Marc; De Meyer, Kristin (2009) -
High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout
Horiguchi, Naoto; Demuynck, Steven; Ercken, Monique; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Vandeweyer, Tom; Baerts, Christina; Mannaert, Geert; Truffert, Vincent; Verluijs, j; Alaerts, Wilfried; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Vandenberghe, Geert; Beyer, Gerald; Lauwers, Anne; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2010) -
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Van Dal, Mark; Collaert, Nadine; Doornbos, Gerben; Vellianitis, Georgios; Curatola, Gilberto; Pawlak, Bartek; Duffy, Ray; Jonville, Carole; Degroote, Bart; Altamirano Sanchez, Efrain; Kunnen, Eddy; Demand, Marc; Beckx, Stephan; Vandeweyer, Tom; Delvaux, Christie; Leys, Frederik; Hikavyy, Andriy; Rooyackers, Rita; Kaiser, M.; Weemaes, R.G.R.; Biesemans, Serge; Jurczak, Gosia; Kottantharayil, Anil; Witters, Liesbeth; Lander, Rob (2007) -
Immersion lithography and double patterning in advanced microelectronics
Vandeweyer, Tom; Bekaert, Joost; Ercken, Monique; Gronheid, Roel; Miller, Andy; Truffert, Vincent; Verhaegen, Staf; Versluijs, Janko; Wiaux, Vincent; Wong, Patrick; Vandenberghe, Geert; Maenhoudt, Mireille (2010) -
In-line 3D AFM for critical dimension and sidewall roughness of Si photonic waveguide and correlation with its propagation loss
Kim, Tae-Gon; Verheyen, Peter; De Heyn, Peter; Vandeweyer, Tom; Miller, Andy; Pantouvaki, Marianna; Van Campenhout, Joris; Jo, Ahjin; Cho, Sangjoon; Park, Sang-il (2017) -
In-line atomic resolution local nanotopography variation metrology for CMP process
Kim, Tae-Gon; Heylen, Nancy; Kim, Soon-Wook; Vandeweyer, Tom; Jo, Ah-jin; Lee, Ju Suk; Ahn, Byoung-Woon; Cho, Sang-Joon; Park, Sang-il; Imer, Bernd; Shmidt, Sebastian (2017) -
In-line critical dimension and sidewall roughness metrology study for compound nanostructure process control by in-line 3D atomic force microscopy
Kim, Tae-Gon; Ryu, Henry; Jo, Ah-jin; Cho, Sang-Joon; Park, Sang-il; Vandeweyer, Tom (2016) -
In-line metrology for atomic resolution local height variation
Kim, Tae-Gon; Kim, Soon-Wook; Vandeweyer, Tom; Jo, Ah-jin; Lee, Ju Suk; Ahn, Byoung-Woon; Zandiatashbar, Ardavan; Cho, Sang-Joon; Park, Sang-il; Irmer, Bernd; Schmidt, Sebastian (2017) -
In-line metrology for characterization and control of extreme wafer thinning of bonded wafers
Liebens, Maarten; Jourdain, Anne; De Vos, Joeri; Vandeweyer, Tom; Miller, Andy; Beyne, Eric; Li, Shifang; Bast, G.; Stoerring, Moritz; Hiebert, S.; Cross, Andrew (2017)