Browsing by author "Demand, Marc"
Now showing items 21-40 of 76
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Dry etching patterning requirements for multi-gate devices
Altamirano Sanchez, Efrain; Vandeweyer, Tom; Demand, Marc; Boullart, Werner (2013-09) -
Dry-etch fin patterning of a sub-22nm node SRAM cell: EUV lithography new dry etch challenges
Altamirano Sanchez, Efrain; Yamaguchi, Yoko Yamaguchi; Lindain, Jeffrey Lindain; Horiguchi, Naoto; Ercken, Monique; Demand, Marc; Boullart, Werner (2011) -
Dry-etch Fin patterning on SOI: transition from 32 to 22nm node on a 6T-SRAM cell
Altamirano Sanchez, Efrain; Ercken, Monique; Veloso, Anabela; Demand, Marc; Boullart, Werner (2009) -
Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Conard, Thierry; Pantisano, Luigi; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Houssa, Michel; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompeyrinne, J.; Loquet, J.P. (2005) -
Etch of Yb-doped poly gates to achieve low vt Ni-FUSI CMOS
Demand, Marc; Paraschiv, Vasile; Shamiryan, Denis; Veloso, Anabela; Vrancken, Christa; Brus, Stephan; Boullart, Werner (2007) -
Exploring double patterning approaches for 22-nm half-pitch gate structures
Locorotondo, Sabrina; Vangoidsenhoven, Diziana; Wouters, Johan M. D.; Miller, Andy; Demand, Marc; Boullart, Werner (2008) -
FinFETs and their futures
Horiguchi, Naoto; Parvais, Bertrand; Chiarella, Thomas; Collaert, Nadine; Veloso, Anabela; Rooyackers, Rita; Verheyen, Peter; Witters, Liesbeth; Redolfi, Augusto; De Keersgieter, An; Brus, Stephan; Zschaetzsch, Gerd; Ercken, Monique; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Jurczak, Gosia; Vandervorst, Wilfried; Hoffmann, Thomas Y.; Biesemans, Serge (2011) -
FinFETs and their futures
Horiguchi, Naoto; Parvais, Bertrand; Chiarella, Thomas; Collaert, Nadine; Veloso, Anabela; Rooyackers, Rita; Verheyen, Peter; Witters, Liesbeth; Redolfi, Augusto; De Keersgieter, An; Brus, Stephan; Zschaetzsch, Gerd; Ercken, Monique; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Jurczak, Gosia; Vandervorst, Wilfried; Hoffmann, Thomas Y.; Biesemans, Serge (2010) -
Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs
Veloso, Anabela; Witters, Liesbeth; Demand, Marc; Ferain, Isabelle; Son, Nak-Jim; Kaczer, Ben; Roussel, Philippe; Simoen, Eddy; Kauerauf, Thomas; Adelmann, Christoph; Brus, Stephan; Richard, Olivier; Bender, Hugo; Conard, Thierry; Vos, Rita; Rooyackers, Rita; Van Elshocht, Sven; Collaert, Nadine; De Meyer, Kristin; Biesemans, Serge; Jurczak, Gosia (2008) -
Fluorocarbon-based passivation in STI plasma etching
Milenin, Alexey; Athimulam, Raja; Demand, Marc; Coenegrachts, Bart (2012) -
Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Demand, Marc; de Marneffe, Jean-Francois; Altamirano Sanchez, Efrain; De Keersgieter, An; Delvaux, Christie; De Backer, Johan; Brus, Stephan; Hermans, Jan; Baudemprez, Bart; Van Roey, Frieda; Lorusso, Gian; Baerts, Christina; Goossens, Danny; Vrancken, Christa; Mertens, Sofie; Versluijs, Janko; Truffert, Vincent; Huffman, Craig; Laidler, David; Heylen, Nancy; Ong, Patrick; Parvais, Bertrand; Rakowski, Michal; Verhaegen, Staf; Hikavyy, Andriy; Meiling, H.; Hultermans, B.; Romijn, L.; Pigneret, C.; Lok, S.; Van Dijk, A.; Shah, K.; Noori, A.; Gelatos, J.; Arghavani, R.; Schreutelkamp, Rob; Boelen, Pieter; Richard, Olivier; Bender, Hugo; Witters, Liesbeth; Collaert, Nadine; Rooyackers, Rita; Absil, Philippe; Lauwers, Anne; Jurczak, Gosia; Hoffmann, Thomas Y.; Vanhaelemeersch, Serge; Cartuyvels, Rudi; Ronse, Kurt; Biesemans, Serge (2008) -
Gate isolation technology for compact poly-CMP embedded flash memories
Slotboom, Michiel; Goarin, Pierre; Akil, Nader; Van Duuren, Michiel; Demand, Marc; Wouters, Johan M. D.; Beckx, Stephan; Leray, Philippe; Baerts, Christina; Heylen, Nancy; Pollentier, Ivan (2003) -
Gatestacks for scalable high-performance FinFETs
Vellianitis, Georgios; Van Dal, Mark; Witters, Liesbeth; Curatola, Gilberto; Doornbos, Gerben; Collaert, Nadine; Jonville, C.; Torregiani, Cristina; Lai, Li-Shyue; Petry, Jasmine; Pawlak, Bartek; Duffy, Ray; Demand, Marc; Beckx, Stephan; Mertens, Sofie; Delabie, Annelies; Vandeweyer, Tom; Delvaux, Christie; Leys, Frederik; Hikavyy, Andriy; Rooyackers, Rita; Kaiser, M.; Weemaes, R.G.R.; Voogt, F.; Roberts, H.; Donnet, D.; Biesemans, Serge; Jurczak, Gosia; Lander, Rob (2007) -
Ge-source vertical tunnel FETs using a novel replacement-source integration scheme
Rooyackers, Rita; Vandooren, Anne; Verhulst, Anne; Walke, Amey; Simoen, Eddy; Devriendt, Katia; Locorotondo, Sabrina; Demand, Marc; Bryce, George; Loo, Roger; Hikavyy, Andriy; Vandeweyer, Tom; Huyghebaert, Cedric; Collaert, Nadine; Thean, Aaron (2014-12) -
High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout
Horiguchi, Naoto; Demuynck, Steven; Ercken, Monique; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Vandeweyer, Tom; Baerts, Christina; Mannaert, Geert; Truffert, Vincent; Verluijs, j; Alaerts, Wilfried; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Vandenberghe, Geert; Beyer, Gerald; Lauwers, Anne; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2010) -
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
Van Dal, Mark; Collaert, Nadine; Doornbos, Gerben; Vellianitis, Georgios; Curatola, Gilberto; Pawlak, Bartek; Duffy, Ray; Jonville, Carole; Degroote, Bart; Altamirano Sanchez, Efrain; Kunnen, Eddy; Demand, Marc; Beckx, Stephan; Vandeweyer, Tom; Delvaux, Christie; Leys, Frederik; Hikavyy, Andriy; Rooyackers, Rita; Kaiser, M.; Weemaes, R.G.R.; Biesemans, Serge; Jurczak, Gosia; Kottantharayil, Anil; Witters, Liesbeth; Lander, Rob (2007) -
Impact of O2-based plasma strip chemistries on the electrochemical behavior of TiN electrodes for biomedical applications
Collaert, Nadine; Mannaert, Geert; Paraschiv, Vasile; Goossens, Danny; Demand, Marc; Eberle, Wolfgang (2012-11) -
Implementation of high-K and metal gate materials for the 45nm node and beyond: gate patterning development
Beckx, Stephan; Demand, Marc; Locorotondo, Sabrina; Henson, K.; Claes, Martine; Paraschiv, Vasile; Shamiryan, Denis; Jaenen, Patrick; Boullart, Werner; De Gendt, Stefan; Biesemans, Serge; Vanhaelemeersch, Serge; Vertommen, Johan; Coenegrachts, Bart (2004) -
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development
Beckx, Stephan; Demand, Marc; Locorotondo, Sabrina; Henson, Kirklen; Claes, Martine; Paraschiv, Vasile; Shamiryan, Denis; Jaenen, Patrick; Boullart, Werner; De Gendt, Stefan; Biesemans, Serge; Vanhaelemeersch, Serge; Vertommen, Johan; Coenegrachts, Bart (2005-06) -
Integration challenges for multi-gate devices
Collaert, Nadine; Brus, Stephan; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Goodwin, Michael; Kottantharayil, Anil; Rooyackers, Rita; Verheyen, Peter; Yim, Yong Sik; Zimmerman, Paul; Beckx, Stephan; Degroote, Bart; Demand, Marc; Kim, Myeong-Cheol; Kunnen, Eddy; Locorotondo, Sabrina; Mannaert, Geert; Neuilly, Francois; Shamiryan, Denis; Baerts, Christina; Ercken, Monique; Laidler, David; Leys, Frederik; Loo, Roger; Lisoni, Judit; Snow, Jim; Vos, Rita; Boullart, Werner; Pollentier, Ivan; De Gendt, Stefan; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2005)