Browsing by author "Van Elshocht, Sven"
Now showing items 61-80 of 408
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Atomic layer deposition of scandium-based oxides
Nyns, Laura; Lisoni, Judit; Van den Bosch, Geert; Van Elshocht, Sven; Van Houdt, Jan (2013) -
Atomic layer deposition of scandium-based oxides
Nyns, Laura; Lisoni, Judit; Van den Bosch, Geert; Van Elshocht, Sven; Van Houdt, Jan (2014) -
Atomic layer deposition of strontium titanate films using Sr(tBu3Cp)2 and Ti(OMe)4
Popovici, Mihaela Ioana; Van Elshocht, Sven; Menou, Nicolas; Swerts, Johan; Pierreux, Dieter; Delabie, Annelies; Brijs, Bert; Conard, Thierry; Opsomer, Karl; Maes, Jan; Wouters, Dirk; Kittl, Jorge (2010) -
Atomic layer deposition of Ta3N5
Dekkers, Harold; Van Elshocht, Sven; Petersen Barbosa Lima, Lucas (2013) -
Atomic layer deposition of tantalum oxide and tantalum silicate from chloride precursors
Adelmann, Christoph; Delabie, Annelies; Schepers, Bart; Rodriguez, Leonard; Franquet, Alexis; Conard, Thierry; Opsomer, Karl; Vaesen, Inge; Moussa, Alain; Pourtois, Geoffrey; Pierloot, Christine; Caymax, Matty; Van Elshocht, Sven (2012) -
Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics
Han, Jeong Hwan; Ungur, Elisaveta; Franquet, Alexis; Opsomer, Karl; Conard, Thierry; Moussa, Alain; De Gendt, Stefan; Van Elshocht, Sven; Adelmann, Christoph (2013-07) -
Atomic-layer deposition of lutetium aluminate thin films for non-volatile memory applications
Adelmann, Christoph; Swerts, Johan; Conard, Thierry; Brijs, Bert; Franquet, Alexis; Hardy, An; Tielens, Hilde; Opsomer, Karl; Moussa, Alain; Van Bael, Marlies; Jurczak, Gosia; Kittl, Jorge; Van Elshocht, Sven (2011) -
Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices
Adelmann, Christoph; Lin, Dennis; Nyns, Laura; Schepers, Bart; Delabie, Annelies; Van Elshocht, Sven; Caymax, Matty (2011) -
AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
Karim, Zia; Barbar, Ghassan; Boissiere, Olivier; Lehnen, Peer; Lohe, Christoph; Seidel, Tom; Adelmann, Christoph; Conard, Thierry; O'Sullivan, Barry; Ragnarsson, Lars-Ake; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2007-10) -
Band alignment and electron traps in Y2O3 layers on (100) Si
Wang, Wan Chih; Badylevitch, M.; Afanasiev, Valeri; Stesmans, Andre; Adelmann, Christoph; Van Elshocht, Sven; Kittl, Jorge; Lukosius, M.; Walczyk, Ch.; Wenger, Ch. (2009) -
Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks
Fadida, Sivan; Eisenberg, Moshe; Nyns, Laura; Van Elshocht, Sven; Caymax, Matty (2011) -
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge Layers on Si substrates
Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Clemente, Francesca; Satta, Alessandra; Meuris, Marc (2008) -
Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates
Terzieva, Valentina; Souriau, Laurent; Caymax, Matty; Brunco, David; Moussa, Alain; Van Elshocht, Sven; Loo, Roger; Meuris, Marc (2007) -
BEOL compatible top pinned magnetic tunnel junctions with a synthetic ferromagnetic pinning layer design
Swerts, Johan; Liu, Enlong; Couet, Sebastien; Mertens, Sofie; Carpenter, Robert; Kim, Woojin; Rao, Siddharth; Garello, Kevin; Van Elshocht, Sven; Kar, Gouri Sankar (2018) -
BEOLC compatiblehigh tunnel magneto resistance perpendicula magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap
Swerts, Johan; Mertens, Sofie; Lin, Tsann; Couet, Sebastien; Tomczak, Yoann; Sankaran, Kiroubanand; Pourtois, Geoffrey; Kim, Woojin; Meersschaut, Johan; Souriau, Laurent; Radisic, Dunja; Van Elshocht, Sven; Kar, Gouri Sankar; Furnemont, Arnaud (2015) -
Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications
Van Elshocht, Sven; Baklanov, Mikhaïl; Brijs, Bert; Carter, R.; Caymax, Matty; Carbonell, Laure; Claes, Martine; Conard, Thierry; Cosnier, Vincent; Date, Lucien; De Gendt, Stefan; Kluth, J.; Pique, Didier; Richard, Olivier; Vanhaeren, Danielle; Vereecke, Guy; Witters, Thomas; Zhao, Chao; Heyns, Marc (2004) -
Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs
Veloso, Anabela; Witters, Liesbeth; Demand, Marc; Ferain, Isabelle; Son, Nak Jin; Kaczer, Ben; Roussel, Philippe; Adelmann, Christoph; Brus, Stephan; Richard, Olivier; Bender, Hugo; Conard, Thierry; Vos, Rita; Rooyackers, Rita; Van Elshocht, Sven; Collaert, Nadine; De Meyer, Kristin; Biesemans, Serge; Jurczak, Malgorzata (2008) -
Challenges for atomic layer deposition in CMOS devices with high-mobility channel materials
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc (2009) -
Characterization by GISAXS and electrochemical impedance spectroscopy of porous oxide films
Huanca, Danilo; Verdonck, Patrick; Dias, Carlos; Petersen Barbosa Lima, Lucas; Van Elshocht, Sven; dos Santos, Sebastiao; Witters, Thomas (2018) -
Characterization of advanced semiconductor materials by thermal desorption mass spectrometry with atmospheric pressure ionization
Carbonell, Laure; Vereecke, Guy; Van Elshocht, Sven; Caymax, Matty; Van Hove, Marleen; Maex, Karen; Mertens, Paul (2003)