Browsing Conference contributions by imec author "2e8a8522bb9f831b95ac2dc3cf698c12bc04b1b7"
Now showing items 1-20 of 73
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
a-VMCO: a novel forming-free, self-rectifying analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, Bogdan; Crotti, Davide; Subhechha, Subhali; Zhang, Leqi; Chen, Yangyin; Clima, Sergiu; Paraschiv, Vasile; Hody, Hubert; Adelmann, Christoph; Popovici, Mihaela Ioana; Richard, Olivier; Jurczak, Gosia (2015) -
Challenges and opportunities of vertical FET devices using 3D circuit design layouts
Veloso, Anabela; Huynh Bao, Trong; Rosseel, Erik; Paraschiv, Vasile; Devriendt, Katia; Vecchio, Emma; Delvaux, Christie; Chan, BT; Ercken, Monique; Tao, Zheng; Li, Waikin; Altamirano Sanchez, Efrain; Versluijs, Janko; Brus, Stephan; Matagne, Philippe; Waldron, Niamh; Ryckaert, Julien; Mocuta, Dan; Collaert, Nadine (2016) -
Challenges on surface conditioning in 3D device architectures: triple-gate FinFETs, gate-all-around lateral and vertical nanowire FETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Fleischmann, Claudia; Melkonyan, Davit; Huynh Bao, Trong; Eneman, Geert; Hellings, Geert; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
Challenges on surface conditioning in 3D device architectures: triple-gate finFETs, gate-all-around lateral and vertical nanowireFETs
Veloso, Anabela; Paraschiv, Vasile; Vecchio, Emma; Devriendt, Katia; Li, Waikin; Simoen, Eddy; Chan, BT; Tao, Zheng; Rosseel, Erik; Loo, Roger; Milenin, Alexey; Kunert, Bernardette; Teugels, Lieve; Sebaai, Farid; Lorant, Christophe; van Dorp, Dennis; Altamirano Sanchez, Efrain; Brus, Stephan; Marien, Philippe; Sibaja-Hernandez, Arturo; Matagne, Philippe; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
CMP process steps for the fabrication of spin-transfer torque magnetic random access memory
Tsvetanova, Diana; Heylen, Nancy; Teugels, Lieve; Crotti, Davide; Donadio, Gabriele Luca; Kar, Gouri Sankar; Struyf, Herbert; Souriau, Laurent; Mertens, Sofie; Swerts, Johan; Couet, Sebastien; Lin, Tsann; Paraschiv, Vasile; Kim, Woojin; Rao, Siddharth (2016) -
Composition control and ferroelectric properties of sidewall Sr0.8Bi2.2Ta2O9 in integrated 3-Dimensional ferroelectric capacitors
Goux, Ludovic; Lisoni, Judit; Schwitters, Michael; Paraschiv, Vasile; Maes, D.; Haspeslagh, Luc; Wouters, Dirk; Menou, M.; Turquat, Ch.; Madigou, V.; Muller, Ch.; Zambrano, R. (2005) -
Development of AlGaN recess etch for Emode POWER HEMTs
Mannaert, Geert; Paraschiv, Vasile; De Jaeger, Brice; Van Hove, Marleen; Demand, Marc; Decoutere, Stefaan; Boullart, Werner (2012) -
Double patterning with dual hard mask for 28nm node devices and below
Hody, Hubert; Paraschiv, Vasile; Vecchio, Emma; Locorotondo, Sabrina; Winroth, Gustaf; Athimulam, Raja; Boullart, Werner (2013) -
Dry etch of Yb-doped poly-Si gates for low Vt FUSI devices
Demand, Marc; Paraschiv, Vasile; Shamiryan, Denis; Vrancken, Christa; Brus, Stephan; Veloso, Anabela; Boullart, Werner (2007) -
Dry etch processing of Multiple Gate FETs with metal gate electrode
Demand, Marc; Paraschiv, Vasile; Shamiryan, Denis; Beckx, Stephan; Boullart, Werner; Vanhaelemeersch, Serge (2005) -
Effects of voltage cycling on polarization and reliability of 3D SBT ferroelectric capacitors integrated in 0.18um CMOS technology
Wouters, Dirk; Goux, Ludovic; Lisoni, Judit; Maes, David; Vander Meeren, Hans; Paraschiv, Vasile; Haspeslagh, Luc; Artoni, Cesari; Corallo, Giuseppina; Zambrano, Raffaele (2005) -
Etch development for E-mode GaN power HEMT fabrication
Mannaert, Geert; Posthuma, Niels; De Jaeger, Brice; Van Hove, Marleen; Xu, Kaidong; Decoutere, Stefaan; Paraschiv, Vasile (2014) -
Etch of Yb-doped poly gates to achieve low vt Ni-FUSI CMOS
Demand, Marc; Paraschiv, Vasile; Shamiryan, Denis; Veloso, Anabela; Vrancken, Christa; Brus, Stephan; Boullart, Werner (2007) -
Fabrication challenges in integrating self-assembled block copolymer process in semiconductor devices
Seema Saseendran, Sandeep; Paneri, Abhilash; Tobback, Bert; Kutrzeba Kotowska, Bogumila; Vecchio, Emma; Jamieson, Geraldine; Paraschiv, Vasile; Figeys, Bruno; Suh, Hyo Seon; Sabuncuoglu Tezcan, Deniz; Takahashi, Kohei; Fujikane, Masaki; Himeno, Atsushi; Nakamura, Kunihiko; Tambo, Naoki; Nakata, Yuki; Tanaka, Hiroyuki; Naito, Yasuyuki (2020) -
FEOL etch challenges, from planar metal gates towards FinFET devices
Altamirano Sanchez, Efrain; Paraschiv, Vasile; Boullart, Werner (2012) -
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Chen, Yangyin; Goux, Ludovic; Pantisano, Luigi; Swerts, Johan; Adelmann, Christoph; Mertens, Sofie; Afanasiev, Valeri; Wang, Xin Peng; Govoreanu, Bogdan; Degraeve, Robin; Kubicek, Stefan; Paraschiv, Vasile; Verbrugge, Beatrijs; Jossart, Nico; Altimime, Laith; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2011) -
Galvanic corrosion of stacked metal gate electrodes during cleaning in HF solutions
Garaud, Sylvain; Vos, Rita; Shamiryan, Denis; Paraschiv, Vasile; Mertens, Paul; Fransaer, Jan; De Gendt, Stefan (2008) -
Gate double patterning strategies for 10nm node FinFET devices
Hody, Hubert; Paraschiv, Vasile; Hellin, David; Vandeweyer, Tom; Boccardi, Guillaume; Xu, Kaidong (2014) -
Gate-all-around NWFETs vs. triple-gate FinFETs: junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
Veloso, Anabela; Hellings, Geert; Cho, Moon Ju; Simoen, Eddy; Devriendt, Katia; Paraschiv, Vasile; Vecchio, Emma; Tao, Zheng; Versluijs, Janko; Souriau, Laurent; Dekkers, Harold; Brus, Stephan; Geypen, Jef; Lagrain, Pieter; Bender, Hugo; Eneman, Geert; Matagne, Philippe; De Keersgieter, An; Fang, W.; Collaert, Nadine; Thean, Aaron (2015)