Browsing Articles by imec author "96aaa64e938e223bc994751727550abb316e187c"
Now showing items 1-19 of 19
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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Alternative high-k dielectrics for semiconductor applications
Van Elshocht, Sven; Adelmann, Christoph; Clima, Sergiu; Pourtois, Geoffrey; Conard, Thierry; Delabie, Annelies; Franquet, Alexis; Lehnen, Peer; Meersschaut, Johan; Menou, Nicolas; Popovici, Mihaela Ioana; Richard, Olivier; Schram, Tom; Wang, Xin Peng; Hardy, An; Dewulf, Daan; Van Bael, Marlies; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Maes, Jan; Wouters, Dirk; De Gendt, Stefan; Kittl, Jorge (2009) -
Atomic layer deposition of gadolinium aluminate layers using Gd(iPrCp)3, TMA, and O3 or H2O
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Dewulf, Daan; Hardy, An; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Van Bael, Marlies; Maes, Jan; Jurczak, Gosia; Kittl, Jorge; Van Elshocht, Sven (2010) -
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Fedorenko, Yanina; Swerts, Johan; Maes, Jan; Tois, E.; Haukka, S.; Wang, C.G; Wilk, G.; Delabie, Annelies; Deweerd, Wim; De Gendt, Stefan (2007) -
Atomic layer deposition of hafnium silicate gate dielectric layers
Delabie, Annelies; Pourtois, Geoffrey; Caymax, Matty; De Gendt, Stefan; Ragnarsson, Lars-Ake; Heyns, Marc; Fedorenko, Yanina; Swerts, Johan; Maes, Jan (2007) -
Atomic layer deposition of strontium titanate films using Sr(tBu3Cp)2 and Ti(OMe)4
Popovici, Mihaela Ioana; Van Elshocht, Sven; Menou, Nicolas; Swerts, Johan; Pierreux, Dieter; Delabie, Annelies; Brijs, Bert; Conard, Thierry; Opsomer, Karl; Maes, Jan; Wouters, Dirk; Kittl, Jorge (2010) -
Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
Band alignment between (100)Si and Hf-based complex metal oxides
Afanasiev, Valeri; Stesmans, Andre; Zhao, Chao; Caymax, Matty; Rittersma, Z.M.; Maes, Jan (2005) -
High-k dielectrics for future generation memory devices
Kittl, Jorge; Opsomer, Karl; Popovici, Mihaela Ioana; Menou, Nicolas; Kaczer, Ben; Wang, Xin Peng; Adelmann, Christoph; Pawlak, Malgorzata; Tomida, Kazuyuki; Rothschild, Aude; Govoreanu, Bogdan; Degraeve, Robin; Schaekers, Marc; Zahid, Mohammed; Delabie, Annelies; Meersschaut, Johan; Polspoel, Wouter; Clima, Sergiu; Pourtois, Geoffrey; Knaepen, W.; Detavernier, C.; Afanasiev, Valeri; Blomberg, T.; Pierreux, Dieter; Swerts, Johan; Fischer, Pamela; Maes, Jan; Manger, Dirk; Vandervorst, Wilfried; Conard, Thierry; Franquet, Alexis; Favia, Paola; Bender, Hugo; Brijs, Bert; Van Elshocht, Sven; Jurczak, Gosia; Van Houdt, Jan; Wouters, Dirk (2009) -
Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
Swerts, Johan; Peys, Nick; Nyns, Laura; Delabie, Annelies; Franquet, Alexis; Maes, Jan; Van Elshocht, Sven; De Gendt, Stefan (2010) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapour deposition
De Witte, Hilde; Maes, Jan; Passefort, S.; Besling, W.; Eason, K.; Young, E.; Rittersma, Chris; Heyns, Marc (2002-09) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
De Witte, Hilde; Passefort, Sophie; Besling, Wim; Maes, Jan; Eason, K.; Young, Edward; Rittersma, Chris; Heyns, Marc (2003) -
Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI
Aoulaiche, Marc; Houssa, Michel; Deweerd, Wim; Trojman, Lionel; Conard, Thierry; Maes, Jan; De Gendt, Stefan; Groeseneken, Guido; Heyns, Marc (2007) -
Ozone based atomic layer deposition of hafnium oxide and impact of nitrogen oxide species
Delabie, Annelies; Swerts, Johan; Van Elshocht, Sven; Jung, Sung-Hoon; Raisanen, Petri; Givens, Michael; Shero, Eric; Peeters, Jozef; Machkaoutsan, Vladimir; Maes, Jan (2011-03) -
Ozone-based metal oxide atomic layer deposition: impact of N2/O2 supply ratio in ozone generation
Delabie, Annelies; Caymax, Matty; Gielis, Sven; Maes, Jan; Nyns, Laura; Popovici, Mihaela Ioana; Swerts, Johan; Tielens, Hilde; Jozef, Peeters; Van Elshocht, Sven (2010) -
Properties of ALD HfTaxOy high-k layers deposited on chemical silicon oxide
Zhao, Chao; Witters, Thomas; Breimer, P.; Maes, Jan; Caymax, Matty; De Gendt, Stefan (2007) -
Sequential infiltration synthesis for line edge roughness mitigation of EUV resist
Baryshnikova, Marina; De Simone, Danilo; Knaepen, Werner; Kachel, Krzysztof; Chan, BT; Paolillo, Sara; Maes, Jan; De Roest, David; Rincon Delgadillo, Paulina; Vandenberghe, Geert (2017) -
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Tsai, Wilman; Carter, Richard; Nohira, Hiroshi; Caymax, Matty; Conard, Thierry; Cosnier, Vincent; De Gendt, Stefan; Heyns, Marc; Petry, Jasmine; Richard, Olivier; Vandervorst, Wilfried; Young, Edward; Zhao, Chao; Maes, Jan; Tuominen, M.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T. (2003) -
Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps
Vais, Abhitosh; Lin, Dennis; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; De Meyer, Kristin; Thean, Aaron (2015)