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Browsing by Author "Bargallo Gonzalez, Mireia"

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    Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits

    Martin-Martinez, J.
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    Amat, E.
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    Ayala, N.
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    Bargallo Gonzalez, Mireia
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    Verheyen, Peter  
    Proceedings paper
    2011, 8th Spanish Conference on Electron Devices - CDE, 8/02/2011
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    Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions

    Bargallo Gonzalez, Mireia
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    Thomas, Nicole
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    Simoen, Eddy  
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    Verheyen, Peter  
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    Hikavyy, Andriy  
    Proceedings paper
    2007, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7, 7/10/2007, p.47-53
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    Analysis of the temperature dependence of trap-assisted tunneling in Ge pFET junctions

    Bargallo Gonzalez, Mireia
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    Eneman, Geert  
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    Wang, Gang
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    De Jaeger, Brice  
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    2011, Journal of the Electrochemical Society, (158) 10, p.H955-H960
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    Analysis of the temperature dependence of trap-assisted-tunneling in Ge pFETs junctions

    Bargallo Gonzalez, Mireia
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    Eneman, Geert  
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    Wang, Gang
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    De Jaeger, Brice  
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    Simoen, Eddy  
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    Claeys, Cor
    Proceedings paper
    2011, China Semiconductor Technology International Conference - CSTIC, 13/03/2011, p.725-730
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    Carrier lifetime evaluation of electron irradiated SiGe/Si diode

    Idemoto, T.
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    Ohyama, H.
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    Takakura, K.
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    Tsunoda, I.
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    Yoneoka, M.
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    Nakashima, T.
    Proceedings paper
    2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.154-155
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    Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

    Amat, Esteve
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    Rodriguez, Rosana
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    Bargallo Gonzalez, Mireia
    ;
    Martin Martinez, Javier
    Proceedings paper
    2010, IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 1/11/2010
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    CHC degradation of strained devices based on SiON and high-k gate dielectric materials

    Amat, E.
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    Rodriguez, R.
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    Bargallo Gonzalez, Mireia
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    Martin-Martinez, J.
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    Nafria, M.
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    Aymerich, X.
    Journal article
    2011, Microelectronic Engineering, (88) 7, p.1408-1411
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    Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers

    Kobayashi, Daisuke
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    Bargallo Gonzalez, Mireia
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    Rosseel, Erik  
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    Hikavyy, Andriy  
    Meeting abstract
    2010-10, 218th ECS Meeting, 10/10/2010, p.1571
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    Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers

    Kobayashi, Daisuke
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    Bargallo Gonzalez, Mireia
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    Rosseel, Erik  
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    Hikavyy, Andriy  
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    Hirose, K.
    Proceedings paper
    2010, High Purity Silicon 11, 10/10/2010, p.191-202
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    Defect assessment and leakage control in Ge pFET junctions

    Bargallo Gonzalez, Mireia
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    Simoen, Eddy  
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    Eneman, Geert  
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    De Jaeger, Brice  
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    Wang, Gang
    ;
    Loo, Roger  
    Meeting abstract
    2013-09, E-MRS Fall Meeting Symp. A: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Applications, 16/09/2013
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    Defect assessment control and engineering in advanced homo- and hetero-epitaxial device structures

    Bargallo Gonzalez, Mireia
    PHD thesis
    2011-04
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    Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

    Simoen, Eddy  
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    Brouwers, Gijs
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    Eneman, Geert  
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    Bargallo Gonzalez, Mireia
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    De Jaeger, Brice  
    Journal article
    2008, Materials Science in Semiconductor Processing, (11) 5_6, p.364-367
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    Effects of electron and proton radiation on embedded SiGe source/drain diodes

    Ohyama, H.
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    Nagano, T.
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    Takakura, K.
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    Motoki, M.
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    Matsuo, M.
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    Nakamura, H.
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    Sawada, M.
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    Midorikawa, M.
    Journal article
    2008, Materials Science in Semiconductor Processing, (11) 5_6, p.310-313
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    Effects of electron irradiation on SiGe devices

    Ohyama, Hidenori
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    Nagano, T.
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    Takakura, K.
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    Motoki, M.
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    Matsuo, K.
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    Nakamura, H.
    ;
    Sawada, M.
    Journal article
    2010, Thin Solid Films, (518) 9, p.2517-2520
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    Elastic relaxation evaluation in SiGe/Si hetero-epitaxial structures

    Bargallo Gonzalez, Mireia
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    Naka, N.
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    Hikavyy, Andriy  
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    Eneman, Geert  
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    Loo, Roger  
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    Simoen, Eddy  
    Meeting abstract
    2011, 220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7, 9/10/2011, p.2129
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    Elastic relaxation evaluation in SiGe/Si hetero-epitaxial structures

    Bargallo Gonzalez, Mireia
    ;
    Naka, N.
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    Hikavyy, Andriy  
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    Eneman, Geert  
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    Loo, Roger  
    ;
    Simoen, Eddy  
    Proceedings paper
    2011, ULSI Process Integration 7, 9/10/2011, p.181-189
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    Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

    Bargallo Gonzalez, Mireia
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    Simoen, Eddy  
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    Vissouvanadin Soubaretty, Bertrand
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    Eneman, Geert  
    Journal article
    2009, Applied Physics Letters, (94) 23, p.233507
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    Electrical activity of dislocations and defects in strained Si and Ge based devices

    Simoen, Eddy  
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    Eneman, Geert  
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    Verheyen, Peter  
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    Loo, Roger  
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    Bargallo Gonzalez, Mireia
    ;
    Claeys, Cor
    Proceedings paper
    2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 13/10/2008, p.513-527
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    Electrical activity of dislocations and defects in strained Si and Ge based devices

    Simoen, Eddy  
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    Eneman, Geert  
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    Verheyen, Peter  
    ;
    Loo, Roger  
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    Bargallo Gonzalez, Mireia
    ;
    Claeys, Cor
    Meeting abstract
    2008, 214th ECS Meeting, 12/10/2008, p.2434
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    Electrical defect issues of hetero-epitaxy for advanced nanometric CMOS technologies

    Claeys, Cor
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    Bargallo Gonzalez, Mireia
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    Eneman, Geert  
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    Hikavyy, Andriy  
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    Loo, Roger  
    ;
    Simoen, Eddy  
    Proceedings paper
    2009, 7th ISTC/CSTIC, 19/03/2009, p.3-8
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