Browsing by Author "Benedetti, Alessandro"

A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack

Analysis of depth-inhomogeneous strains in deep sub-micron silicon devices by TEM/CBED

Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

Corrosion of FIBed Cu

Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates

Diffusion, activation and recrystallization of boron implanted in preamorphized and crystalline germanium

Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

FEG-TEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

Focused ion beam sample preparation: applications in materials science

Germanium content dependence of the leakage current of recessed SiGe source/drain junctions

Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

In-situ plucker system for preparation of TEM samples by FIB: new applications, future prospects and challenges

Ion implantation in Ge and associated defect control

Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

Nanometer scale characterisation of CoSi2 and NiSi induced strain in silicon by convergent beam electron diffraction

On the asymmetric splitting of CBED HOLZ lines under the gate of recessed SiGe source/drain transistors

On the splitting of high order Laue zone lines in CBED analysis of stress in silicon

P implantation on doping of Ge: diffusion, activation, re-crystallization

(Selective) epitaxial growth of strained Si to fabricate low cost and high performance CMOS devices

Silicides for advanced CMOS devices