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Browsing by Author "Fenger, Germain"

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    Application of pixel-based mask optimization technique for high-transmission attenuated PSM

    Sakajiri, Kyohei
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    Tritchkov, Alexander
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    Granik, Yuri
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    Hendrickx, Eric  
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    Vandenberghe, Geert  
    Proceedings paper
    2009, Design for Manufacturability through Design-Process Integration III, 22/02/2009, p.72750X
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    Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

    Wei, Chih-, I
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    Kang, Seulki
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    Das, Sayantan  
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    Oya, Masahiro
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    Okamoto, Yosuke
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    Maruyama, Kotaro
    Journal article
    2023, JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, (22) 4, p.Art. 041603
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    Calibration and application of a DSA Compact model for grapho-epitaxy hole processes using contour-based metrology

    Fenger, Germain
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    Burbine, Andrew
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    Torres, J. Andres
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    Ma, Yuansheng
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    Granik, Yuri
    Proceedings paper
    2014, Photomask Technology, 16/09/2014, p.92351X
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    Calibration and application of Gaussian random field models for exposure and resist stochastic in EUV lithography

    Wei, Chih-, I
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    Latypov, Azat
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    De Bisschop, Peter  
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    Khaira, Gurdaman
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    Fenger, Germain
    Journal article review
    2022, JAPANESE JOURNAL OF APPLIED PHYSICS, (61) SD, p.SD0806
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    Calibration of Gaussian Random Field stochastic EUV models

    Latypov, Azat M.
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    Wei, Chih-, I
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    De Bisschop, Peter  
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    Khaira, Gurdaman
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    Fenger, Germain
    Proceedings paper
    2022, Conference on Optical and EUV Nanolithography XXXV Part of SPIE Advanced Conference, APR 24-MAY 27, 2022, p.1205105
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    Density limits in logic metal1 using double patterning

    Wiaux, Vincent  
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    Verhaegen, Staf
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    Fenger, Germain
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    Wong, Patrick  
    Proceedings paper
    2009, 6th International Symposium on Immersion Lithography Extensions, 22/10/2009
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    Design correction in extreme ultrviolet lithography

    Fenger, Germain
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    Lorusso, Gian  
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    Hendrickx, Eric  
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    Niroomand, Ardavan
    Journal article
    2010-10, Journal of Micro/Nanolithography MEMS and MOEMS, (9) 4, p.43001
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    Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography

    Ma, Yuansheng
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    Lei, Junjiang
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    Torres, J. Andres
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    Hong, Le
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    Word, James
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    Fenger, Germain
    Proceedings paper
    2015, Alternative Lithographic Technologies VII, 22/02/2015, p.942306
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    Directed self-assembly graphoepitaxy template generation with immersion lithography

    Ma, Yuansheng
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    Lei, Junjiang
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    Torres, J. Andres
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    Hong, Le
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    Word, James
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    Fenger, Germain
    Journal article
    2015, Journal of Micro/Nanolithography MEMS and MOEMS, (14) 3, p.31216
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    E-beam metrology-based EUVL aberration monitoring

    Kang, Seulki
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    Miura, Yuji
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    Maruyama, Kotaro
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    Yamazaki, Yuichiro
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    Wei, Chih-, I
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    Maguire, Ethan
    Proceedings paper
    2022, Conference on Metrology, Inspection, and Process Control XXXVI Part of SPIE Advanced Lithography and Patterning Conference, FEB 24-MAY 27, 2022, p.120530Z
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    EUV based multi-patterning schemes for advanced DRAM nodes

    Das, Sayantan  
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    Sah, Kaushik
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    Fallica, Roberto  
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    Chen, Zhijin
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    Halder, Sandip  
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    Cross, Andrew
    Proceedings paper
    2022, Conference on Advances in Patterning Materials and Processes XXXIX Part of SPIE Advanced Lithography and Patterning Conference, APR 24-MAY 27, 2022, p.Art. 1205503
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    Experimental determination and accurate modeling of the EUV ADT flare

    Hendrickx, Eric  
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    Lorusso, Gian  
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    Fenger, Germain
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    Lam, Michael
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    Word, James
    Proceedings paper
    2009, International Symposium on Extreme Ultraviolet Lithography, 18/10/2009
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    Exploring alternative EUV mask absorber for iN5 self-aligned block and contact layers

    Sejpal, Rajiv
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    Philipsen, Vicky  
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    Armeanu, Ana
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    Wei, Chi-I
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    Gillijns, Werner  
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    Lafferty, Neal
    Proceedings paper
    2019, Photomask Technology 2019, 16/09/2019, p.111481B
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    Feasibility of compensating for EUV field edge effects through OPC

    Maloney, Chris
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    Word, James
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    Fenger, Germain
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    Niroomand, Ardavan
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    Lorusso, Gian  
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    Jonckheere, Rik  
    Proceedings paper
    2014, Extreme Ultraviolet (EUV) Lithography V, 23/02/2014, p.90480T
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    Flare in extreme ultraviolet lithography: metrology, out-of-band radiation, fractal point spread function, and flare map calibration

    Lorusso, Gian  
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    Van Roey, Frieda  
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    Hendrickx, Eric  
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    Fenger, Germain
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    Lam, Michael
    Journal article
    2009, Journal of Micro/Nanolithography, MEMS, and MOEMS, (8) 4, p.41505
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    Full chip correction of EUV design

    Lorusso, Gian  
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    Hendrickx, Eric  
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    Fenger, Germain
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    Niroomand, Ardavan
    Proceedings paper
    2010, Extreme Ultraviolet (EUV) Lithography, 21/02/2010, p.763615
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    High accuracy OPC-modeling by using advanced CD-SEM based contours in the next generation lithography

    Hibino, Daisuke
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    Shindo, Hiroyuki
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    Abe, Yuuichi
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    Hojyo, Yutaka
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    Fenger, Germain
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    Do, Thuy
    Proceedings paper
    2010, Metrology, Inspection and Process Control for Microlithography XXIV, 21/02/2010, p.76381X
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    High NA EUV single patterning of advanced metal logic nodes: Inverse lithography techniques in combination with alternative mask absorbers

    Armeanu, Ana-Maria
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    Pellens, Nick  
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    Philipsen, Vicky  
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    Malankin, Evgeny
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    Xu, Dongbo
    Proceedings paper
    2024, 39th European Mask and Lithography Conference (EMLC), JUN 17-19, 2024, p.Art. 132731M
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    High-accuracy optical proximity correction modeling using advanced critical dimension scanning electron microscope-based contours in next-generation lithography

    Hibino, Daisuke
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    Shindo, Hiroyuki
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    Abe, Yuichi
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    Hojyo, Yutaka
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    Fenger, Germain
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    Do, Thuy
    Journal article
    2011-02, Journal of Micro/Nanolithography MEMS and MOEMS, (10) 1, p.13012
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    High-precision contouring from SEM image in 32-nm lithography and beyond

    Shindo, Hiroyuki
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    Sugiyama, Akiyuki
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    Komuro, Hitoshi
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    Hojyo, Yutaka
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    Matsuoka, Ryoichi
    Proceedings paper
    2009, Design for Manufacturability through Design-Process Integration III, 22/02/2009, p.72751F
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