Browsing by Author "Garbar, N."
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Publication Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's
Journal article1996, IEEE Transactions on Electron Devices, (43) 3, p.417-423Publication Back-gate induced noise overshoot in partially-depleted SOI MOSFETs
Proceedings paper2005, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment, 26/04/2004, p.255-260Publication Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques
Proceedings paper2007, Noise and Fluctuations: 19th International Conference, 9/09/2007, p.39-42Publication Black-gate induced noise overshoot in partially-depleted SOI MOSFETs
Oral presentation2004, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh EnvironmentPublication Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs
Journal article2004, IEEE Trans. Electron Devices, (51) 6, p.1008-1016Publication Electrical characterisation of shallow cobalt-silicided junctions
Proceedings paper2000, 3rd International Conference Materials for Microelectronics, 16/10/2000, p.7-10Publication Electrical characterization of shallow cobalt-silicided junctions
Journal article2001, Journal of Materials Science: Materials in Electronics, (12) 4_6, p.207-10Publication Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors
Proceedings paper2003-09, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003, p.279-282Publication Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs
Proceedings paper2003, Silicon-on-Insulator Technology and Devices XI, 28/04/2003, p.319-324Publication Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias
Journal article2004, IEEE Electron Device Letters, (25) 6, p.433-435Publication Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
Journal article2003, IEEE Electron Device Letters, (24) 12, p.751-754Publication Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs
Proceedings paper1996, Proceedings of the 7th International Symposium on Silicon-on-Insulator Technology and Devices, 5/05/1996, p.309-317Publication Flicker noise in deep submicron nMOS transistors
Journal article2000, Solid-State Electronics, (44) 7, p.1239-1245Publication Flicker noise in submicron MOSFETS with 3.5 nm nitrided gate oxide
Proceedings paper2001, Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f Fluctuations - ICNF, 22/10/2001, p.177-180Publication High-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Journal article2004, Journal of Applied Physics, (95) 8, p.4084-4092Publication Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor transistors
Journal article1997, Applied Physics Letters, (71) 26, p.3874-3876Publication Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions
Journal article2000, IEEE Electron Device Letters, (21) 8, p.408-410Publication Impact of the back-gate bias on the low-frequency noise of fully depleted silicon-on-insulator MOSFETs
Proceedings paper2003, Proceedings of the 17th International Conference on Noise and Fluctuations - ICNF, 18/08/2003, p.321-326Publication Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.357-360Publication Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages
Journal article2008, Ukrainian Journal of Physics, (53) 1, p.74-79
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