Browsing by Author "Goes, Wolfgang"
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Publication A comprehensive model for correlated drain and gate current fluctuations
Proceedings paper2013, 16th International Workshop on Computational Electronics - IWCE, 4/06/2013, p.46-47Publication A model for switching traps in amorphous oxides
Proceedings paper2009, International Conference on Simulation of Semiconductor processes and Devices - SISPAD, 9/09/2009, p.159-162Publication A two-stage model for negative bias temperature instability
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.33-44Publication Advanced modeling of oxide defects for random telegraph noise
Proceedings paper2011-06, 21st International Conference on Noise and Fluctuations - ICNF, 12/06/2011, p.204-207Publication An energy-level perspective of bias temperature instability
Proceedings paper2008-04, 46th Annual IEEE International Reliability Physics Symposium - IRPS, 27/04/2008, p.28-38Publication Analytical solution of the switching trap model for negative bias temperature stress
Proceedings paper2009, IEEE Integrated Reliability Workshop - IIRW, 18/10/2009Publication Bistable defects as the cause for NBTI and RTN
Journal article2011-08, Solid State Phenomena, 178-179, p.473-482Publication Characterization and modeling of reliability issues in nanoscale devices
Proceedings paper2015, IEEE International Symposium on Circuits and Systems - ISCAS, 24/05/2015, p.2445-2448Publication Complete extraction of defect bands responsible for instabilities in n and pFinFETs
Proceedings paper2016, IEEE Symposium on VLSI Technology, 13/06/2016, p.208-209Publication Dispersive transport and negative bias temperature instability: boundary conditions, initial conditions, and transport models
Journal article2008, IEEE Transactions on Device and Materials Reliability, (8) 1, p.79-97Publication Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique
Proceedings paper2009-04, 47th Annual IEEE International Reliability Physics Symposium, 26/04/2009, p.1033-1038Publication Efficient Modeling of Charge Trapping a Cryogenic Temperatures-Part II: Experimental
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 12, p.6372-6378Publication Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 12, p.6365-6371Publication Gate current random telegraph noise and single defect conduction
Journal article2013, Microelectronic Engineering, 109, p.123-125Publication Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Publication Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs
Proceedings paper2015, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2015, p.144-147Publication Modeling bias temperature instability during stress and recovery
Proceedings paper2008-09, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 9/09/2008, p.65-68Publication Multiphonon processes as the origin of reliability issues
Proceedings paper2013, Semiconductors, Dielectrics, and Materials for Nanoelectronics II, 27/10/2013, p.31-47Publication Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
Proceedings paper2016, International Reliability Physics Symposium - IRPS, 2/04/2016Publication On the volatility of oxide defects: activation, deactivation, and transformation