Browsing by Author "Grasser, T."
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Publication A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays
Proceedings paper2023, 7th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), MAR 07-10, 2023Publication A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer NMOSFETs
Proceedings paper2016, 46th European Solid-State Device Research Conference - ESSDERC, 12/09/2016, p.428-431Publication A reliable method for the extraction of the lateral position of defects in ultra-scaled MOSFETs
Proceedings paper2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.XT.13Publication A rigorous study of measurement techniques for negative bias temperature instability
Journal article2008-09, IEEE Transactions on Device and Materials Reliability, (8) 3, p.526-536Publication Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication Benchmarking time-dependent variability of junctionless nanowire FETs
Proceedings paper2017, International Reliability Physics Symposium - IRPS, 2/04/2017, p.2D-6.1-2D-6.7Publication Characterization and modeling of charge trapping: From single defects to devices
Proceedings paper2014, IEEE International Conference on IC Design & Technology - ICICDT, 28/05/2014, p.1-4Publication Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Publication Circuit simulation of workload-dependent RTN and BTI based on trap kinetics
Journal article2014, Microelectronics Reliability, (54) 11, p.2364-2370Publication COMPHY - A compact-physics framework for unified modeling of BTI
Journal article2018, Microelectronics Reliability, 85, p.49-65Publication Critical modeling issues in negative bias temperature instability
Publication CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication Defect creation stimulated by thermally activated hole trapping as the driving force behind negative bias temperature instability in SiO2, SiON, and high-k gate stacks
Proceedings paper2008, IEEE Integrated Reliability Workshop - IRW, 12/10/2008, p.91-95Publication Efficient physical defect model applied to PBTI in high-k stacks
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.XT-11.1-XT-11.6Publication Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.152-153Publication Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.310-313Publication Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Publication Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
Proceedings paper2012, International Reliability Physics Symposium - IRPS, 15/04/2012, p.5A-4Publication Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
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