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Browsing by Author "Hellin, David"

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    15nm half-pitch patterning: EUV + SELF-aligned double patterning

    Versluijs, Janko  
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    Souriau, Laurent  
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    Hellin, David  
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    Orain, Isabelle
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    Kimura, Yoshie
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    Kunnen, Eddy
    Oral presentation
    2012, International Symposium on Extreme Ultraviolet Lithography - EUVL
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    15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU

    Xu, Kaidong
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    Souriau, Laurent  
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    Hellin, David  
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    Versluijs, Janko  
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    Wong, Patrick  
    Proceedings paper
    2013, Advanced Etch Technology for Nanopatterning II, 23/02/2013, p.86850C
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    15nm HP patterning with EUV lithography and SADP

    Souriau, Laurent  
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    Hellin, David  
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    Kunnen, Eddy
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    Versluijs, Janko  
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    Dekkers, Harold  
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    Albert, Johan
    Meeting abstract
    2012, 34th International Symposium on Dry Process - DPS, 15/11/2012
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    A Ge matrix removal method for metallic contamination analysis on Ge wafers using TXRF

    Hellin, David  
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    Geens, Veerle
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    Teerlinck, Ivo
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    Rip, Jens  
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    Theuwis, Antoon  
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    De Gendt, Stefan  
    Oral presentation
    2004, European Conference on X-Ray Spectrometry
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    A novel concept for contact etch residue removal

    Vos, Ingrid  
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    Hellin, David  
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    Demuynck, Steven  
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    Richard, Olivier  
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    Conard, Thierry  
    Proceedings paper
    2007, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10, 7/10/2007, p.403-407
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    Advanced wafer surface cleaning technology

    Mertens, Paul  
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    Vos, Rita  
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    Vereecke, Guy  
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    Arnauts, Sophia  
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    Bearda, Twan
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    De Waele, Rita
    Oral presentation
    2004, SEMICON Korea 2004 STS, S5: Contamination-free Manufacturing Seminar
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    Challenges and approaches in advanced Fin patterning

    Zhang, Liping  
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    Hellin, David  
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    Altamirano Sanchez, Efrain  
    Proceedings paper
    2019, PESM-2019 Plasma Etch and Strip in Microelectronics, 20/05/2019
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    Chlorine detection and quantification in ALCVD HfO2 high-k dielectric films using total reflection X-ray fluorescence spectrometry

    Hellin, David  
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    Delabie, Annelies  
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    Puurunen, Riikka
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    Conard, Thierry  
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    De Gendt, Stefan  
    Meeting abstract
    2003, 204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials, 13/10/2003
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    Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch- total reflection X-ray fluorescence spectrometry

    Hellin, David  
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    Bearda, Twan
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    Zhao, Chao
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    Raskin, G.
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    Mertens, Paul  
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    De Gendt, Stefan  
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    Heyns, Marc  
    Journal article
    2003-12, Spectrochim. Acta B, (58) 12, p.2093-2104
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    Fin bending in dimensional scaling

    Zhang, Liping  
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    Hellin, David  
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    Sepulveda Marquez, Alfonso  
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    Altamirano Sanchez, Efrain  
    Oral presentation
    2020, 2020 SPIE Advanced Lithography: Advances in Patterning Materials and Processes XXXII
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    Gate double patterning strategies for 10nm node FinFET devices

    Hody, Hubert  
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    Paraschiv, Vasile  
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    Hellin, David  
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    Vandeweyer, Tom  
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    Boccardi, Guillaume  
    Meeting abstract
    2014, Advanced Etch Technology for Nanopatterning III, 23/02/2014, p.905407
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    Germanium deep-submicron p-FET and n-FET devices, fabricated on germanium-on-insulator substrates

    Meuris, Marc  
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    De Jaeger, Brice  
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    Van Steenbergen, Jan  
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    Bonzom, Renaud
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    Caymax, Matty  
    Book chapter
    2007
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    Grazing incidence X-ray fluorescence spectrometry for compositional analysis of nanometer-thin high-k dielectric HfO2 layers

    Hellin, David  
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    Delabie, Annelies  
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    Puurunen, Riikka
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    Beaven, Peter
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    Conard, Thierry  
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    Brijs, Bert
    Journal article
    2005-07, Analytical Sciences, (21) 7, p.845-850
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    H2S exposure of a (100)Ge surfaces: evidences for a (2x1) electrically passivated surface

    Houssa, Michel  
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    Nelis, Daniel
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    Hellin, David  
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    Pourtois, Geoffrey  
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    Conard, Thierry  
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    Paredis, K.
    Journal article
    2007, Applied Physics Letters, (90) 22, p.222105
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    Hafnium oxide films by atomic layer deposition for high-k gate dielectric applications: analysis of the density of nanometer-thin films

    Puurunen, Riikka
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    Delabie, Annelies  
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    Van Elshocht, Sven  
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    Caymax, Matty  
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    Green, Martin
    Journal article
    2005, Applied Physics Letters, (86) 7, p.73116
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    Impact of direct CMP on surface and bulk properties of high porosity low-k materials

    Heylen, Nancy  
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    Sinapi, Fabrice
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    Travaly, Youssef
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    Vereecke, Guy  
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    Baklanov, Mikhaïl
    Proceedings paper
    2007, Advanced Metallization Conference 2006, 17/10/2006, p.549-563
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    Implementation of a system for metal contamination control based on classification criteria

    Bearda, Twan
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    Catana, Gabriela
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    Hellin, David  
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    Vos, Rita  
    Proceedings paper
    2008, Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS, 18/09/2006, p.259-262
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    Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning

    De Gendt, Stefan  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
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    Conard, Thierry  
    Proceedings paper
    2004, Cleaning Technology in Semiconducting Device Manufacturing VIII. Proceedings of the International Symposium, 13/10/2003, p.67-77
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    Interplay between dry etch and wet clean in patterning La2O3/HfO2-containing high-k/metal gate stacks

    Vos, Ingrid  
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    Hellin, David  
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    Vrancken, Christa  
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    Geypen, Jef  
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    Bender, Hugo  
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    Vecchio, Emma  
    Proceedings paper
    2009, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11, 4/10/2009, p.29-36
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    Interplay of plasma etch, strip and wet clean in patterning La2O3/HfO2-containing high-k metal gate stacks

    Vos, Ingrid  
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    Hellin, David  
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    Boullart, Werner  
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    Vertommen, Johan  
    Journal article
    2011, Microelectronic Engineering, (88) 1, p.21-27
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