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Browsing by Author "Kukner, Halil"

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    Bias temperature instability analysis in SRAM decoder

    Khan, Seyab
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    Hamdioui, Said
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    Kukner, Halil
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    Raghavan, Praveen
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    Catthoor, Francky  
    Proceedings paper
    2013, 18th IEEE European Test Symposium - ETS, 27/05/2013, p.1
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    Bias temperature instability analysis of FinFET based SRAM cells

    Khan, Seyab
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    Agbo, Innocent
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    Hamdioui, Said
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    Kukner, Halil
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    Kaczer, Ben  
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    Raghavan, Praveen
    Proceedings paper
    2014, Design, Automation and Test in Europe Conference - DATE, 24/03/2014, p.1-6
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    Bias Temperature Instability in CMOS Digital Circuits from Planar to FinFET Nodes

    Kukner, Halil
    PHD thesis
    2015-04
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    BTI impact on logical gates in nano-scale CMOS technology

    Kukner, Halil
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    Khan, Seyab
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    Hamdioui, Said
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    Raghavan, Praveen
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    Catthoor, Francky  
    Proceedings paper
    2012, IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems - DDECS, 18/04/2012
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    BTI reliability from planar to FinFET nodes: Will the next node be more or less reliable?

    Kukner, Halil
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    Weckx, Pieter  
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    Raghavan, Praveen
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    Kaczer, Ben  
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    Jang, Doyoung  
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    Catthoor, Francky  
    Proceedings paper
    2014, Workshop on Manufacturable and Dependable Multicore Architectures at Nanoscale - MEDIAN, 28/03/2014
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    Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates

    Kukner, Halil
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    Khan, Seyab
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    Weckx, Pieter  
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    Raghavan, Praveen
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    Hamdioui, Said
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    Kaczer, Ben  
    Journal article
    2014, IEEE Transactions on Device and Materials Reliability, (14) 1, p.182-193
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    Defect-based methodology for workload-dependent circuit lifetime projections – application to SRAM

    Weckx, Pieter  
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    Kaczer, Ben  
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    Toledano Luque, Maria
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    Grasser, Tibor
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    Roussel, Philippe  
    Proceedings paper
    2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.3A.4
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    Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology

    Kukner, Halil
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    Khatib, Moustafa
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    Morrison, Sebastien  
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    Weckx, Pieter  
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    Raghavan, Praveen
    Proceedings paper
    2014, 15th International Symposium on Quality Electronic Design - ISQED, 3/03/2014, p.473-479
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    Estimation of sense amplifier offset voltage degradation due to zero- and run-time variability

    Agbo, Innocent
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    Taouil, Motta
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    Kraak, Daniel
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    Hamdioui, Said
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    Kukner, Halil
    ;
    Weckx, Pieter  
    Oral presentation
    2017, ICT Open Workshop
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    Impact of duty factor, stress stimuli, and gate drive strength on gate delay degradation with an atomistic trap-based BTI model

    Kukner, Halil
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    Weckx, Pieter  
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    Raghavan, Praveen
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    Kaczer, Ben  
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    Catthoor, Francky  
    Proceedings paper
    2012, 15th EUROMICRO Conference on Digital System Design (DSD): Architectures; Methods & Tools, 5/09/2012, p.1-7
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    Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model

    Kukner, Halil
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    Weckx, Pieter  
    ;
    Raghavan, Praveen
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    Kaczer, Ben  
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    Catthoor, Francky  
    Journal article
    2013, Microprocessors and Microsystems, (37) 8_A, p.792-800
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    Impact of partial resistive defects and bias temperature instability on SRAM decoder reliability

    Khan, Seyab
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    Taouil, Mottaqiallah
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    Hamdioui, Said
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    Kukner, Halil
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    Raghavan, Praveen
    Proceedings paper
    2013, 8th International Design and Test Symposium - IDTS, 16/12/2012
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    Incorporating parameter variations in BTI impact on nano-scale logical gate analysis

    Khan, Seyab
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    Hamdioui, Said
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    Kukner, Halil
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    Raghavan, Praveen
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    Catthoor, Francky  
    Proceedings paper
    2012, IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, 3/10/2012
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    Integral Impact of BTI, PVT-variation and Workload on SRAM Sense Amplifier

    Agbo, Innocent
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    Taouil, Motta
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    Kraak, Daniel
    ;
    Hamdioui, Said
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    Kukner, Halil
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    Weckx, Pieter  
    Journal article
    2017, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, (25) 4, p.1444-1454
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    Modelling and mitigation of time-zero variability in sub-16nm FinFET-based STT-MRAM memories

    Hartmann, Matthias  
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    Kukner, Halil
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    Agrawal, Prashant  
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    Raghavan, Praveen
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    Van der Perre, Liesbet
    Proceedings paper
    2014, 24th Great Lakes Symposium on VLSI - GLSVLSI, 21/05/2014, p.243-244
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    NBTI aging on 32-bit adders in the downscaling planar FET technology nodes

    Kukner, Halil
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    Weckx, Pieter  
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    Morrison, Sebastien  
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    Raghavan, Praveen
    ;
    Kaczer, Ben  
    Proceedings paper
    2014, 17th Euromicro Conference on Digital Systems Design - DSD, 27/08/2014, p.98-107
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    Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation – application to 6T SRAM

    Weckx, Pieter  
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    Kaczer, Ben  
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    Kukner, Halil
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    Roussel, Philippe  
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    Raghavan, Praveen
    Proceedings paper
    2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.5D2
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    Scaling of BTI reliability in presence of Time-zero Variability – Pathfinding from planar FET to advanced 3-D FinFET nodes

    Kukner, Halil
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    Weckx, Pieter  
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    Franco, Jacopo  
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    Toledano Luque, Maria
    ;
    Cho, Moon Ju
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    Kaczer, Ben  
    Proceedings paper
    2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.CA.5.1.1-CA.5.1.7
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    The defect-centric perspective of device and circuit reliability – from individual defects to circuits

    Kaczer, Ben  
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    Franco, Jacopo  
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    Weckx, Pieter  
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    Roussel, Philippe  
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    Bury, Erik  
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    Cho, Moon Ju
    Proceedings paper
    2015, 45th European Solid State Device Research Conference - ESSDERC, 14/09/2015, p.218-225
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    The impact of process variation and stochastic aging in nanoscale VLSI

    Kiamehr, Saman
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    Weckx, Pieter  
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    Tahoori, Mehdi
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    Kaczer, Ben  
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    Kukner, Halil
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    Raghavan, Praveen
    Proceedings paper
    2016, International Reliability Physics Symposium - IRPS, 2/04/2016, p.CR-1
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