Browsing by Author "Makarov, Alexander"
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Publication A Compact Physics Analytical Model for Hot-Carrier Degradation
Proceedings paper2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020Publication Analysis of the features of hot-carrier degradation in FinFETs
Journal article2018-10, Semiconductors, (52) 10, p.1298-1302Publication Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Journal article2019, IEEE Electron Device Letters, (40) 10, p.1579-1582Publication Border trap based modeling of SiC transistor transfer characteristics
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/11/2018, p.1-5Publication Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Journal article2023, MICROMACHINES, (14) 11, p.Art. 2018Publication Correlated time-0 and hot-carrier stress induced FinFET parameter variabilities: modeling approach
Journal article2020, Micromachines, (11) 7, p.657Publication Distribution function based simulations of hot-carrier degradation in nanowire FETs
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/10/2018, p.1-4Publication Experimental-Modeling Framework for Identifying Defects Responsible for Reliability Issues in 2D FETs
Journal article2024, ACS APPLIED MATERIALS & INTERFACES, (16) 45, p.62314-62325Publication Full (Vg,Vd) bias space modeling of hot-carrier degradation in nanowire FETs
Proceedings paper2019, 2019 IEEE International Reliability Physics Symposium - IRPS, 31/03/2019, p.1-7Publication High-Density Standard Cell Libraries with Backside Power Options in A14 Nanosheet Node
Proceedings paper2024, Conference on DTCO and Computational Patterning III, FEB 26-29, 2024, p.1295409Publication Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach
Journal article2017, IEEE Electron Device Letters, (38) 2, p.160-163Publication Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Journal article2018, Semiconductors, (52) 13, p.1738-1742Publication Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations
Proceedings paper2023-05-15, 61st IEEE International Reliability Physics Symposium (IRPS), MAR 26-30, 2023, p.2A.1-1-2A.1-10Publication Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Proceedings paper2020, IEEE International Integrated Reliability Workshop (IIRW), OCT 04-NOV 01, 2020, p.31-34Publication On correlation between hot-carrier stress induced device parameter degradation and time-zero variability
Proceedings paper2019, International Integrated Reliability Workshop 2019 - IIRW, 13/10/2019, p.1-4Publication On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors
Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication On the Contribution of Secondary Holes in Hot-Carrier Degradation a Compact Physics Modeling Perspective
; ; ; ;Yu, Z.; Proceedings paper2023, 7th IEEE Electron Devices Technology and Manufacturing Conference (EDTM), MAR 07-10, 2023Publication Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Journal article2018-02, Semiconductors, (52) 2, p.242-247Publication Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs
Proceedings paper2022-05-02, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Proceedings paper2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference, 23/09/2019, p.262-265