Browsing by Author "Meneghesso, Gaudenzio"

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Al2O3 surface passivation characterized on hydrophobic and hydrophilic c-Si by a combination of QSSPC, CV, XPS and FTIR

AlGaNGaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction

An insight into the parasitic capacitances of SOI and bulk FinFET devices

Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Angular and strain dependence of heavy-ions induced degration in SOI FinFETs

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Degradation mechanisms in AlGaN/GaN HEMTs submitted to off and on-state stress conditions

Degradation of AlGaN/GaN HEMTs below the "critical voltage": a time-dependent analysis

Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaNGaN interface

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Electrical characterization of ALD Al2O3 – HfO2 and PECVD Al2O3 passivation layers for p-type CZ-Silicon PERC solar cells

Electrical-based ESD characterization methodology for ultrathin body SOI MOSFETs

Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model

Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress