Browsing by Author "Roussel, Philippe"

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

A compact model for the grounded-gate nMOS behaviour under CDM ESD stress

A compact model for the grounded-gate nMOS transistor behaviour under CDM ESD stress

A compact NBTI model for accurate analog integrated circuit reliability simulation

A comprehensive LER-aware TDDB lifetime model for advanced Cu interconnects

A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique

A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling

A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

A new physically-based model for temperature acceleration of time-to-breakdown

A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

A new TDDB reliability prediction methodology accounting for multiple SBD and wear out

A physics-aware compact modeling framework for transistor aging in the entire bias space

A pragmatic network-aware paradigm for system-level electromigration predictions at scale

A statistical approach to microdose induced degradation in FinFET devices

Abrupt breakdown in dielectric/metal gate stacks: a potential reliability limitation?

Accelerated Capture and Emission (ACE) measurement pattern for efficient BTI characterization and modeling