Browsing by Author "Simoen, Eddy"
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Publication 1/f low frequency fluctuations and inversion layer quantization in deep submicron metal-oxide-semiconductor field effect transistors
Meeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-12Publication 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Journal article2013-03, Applied Physics Letters, (102) 7, p.73503Publication 1/f noise and DLTS of LEDs
Proceedings paper1996, Proceedings 3rd ELEN Workshop, 5/11/1996, p.32-36Publication 1/f Noise in drain and gate current of MOSFETs with high-k gate stacks
Journal article2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189Publication 1/f noise in fully integrated electrolytically gated FinFETs with fin width down to 20nm
Meeting abstract2019, ICNF conference, 18/01/2019, p.66-68Publication 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Journal article2009, Solid-State Electronics, (53) 11, p.1177-1182Publication 20-MeV alpha ray effects in AlGaAsP p-HEMTs
Proceedings paper2000, Proceedings of the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 11/10/2000, p.133-138Publication 3D backside integration of FinFETs: Is there an impact on LF noise?
Journal article2023, SOLID-STATE ELECTRONICS, (207) September, p.Art. 108724Publication 60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Oral presentation2001, RADECS; 10-14 September 2001; Grenoble, France.Publication A comparison of intrinsic point defect properties in Si and Ge
Proceedings paper2008, Doping Engineering for Front-End Processing, 24/03/2008, p.1070-E6-05Publication A conductive AFM nanoscale analysis of NBTI and channel hot-carriers degradation in MOSFETs
Publication A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
; ; ; ; Zahid, MohammedJournal article2010, Solid-State Electronics, (54) 11, p.1384-1391Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; Publication A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
Meeting abstract2011, 220th ECS Fall Meeting, 9/10/2011, p.1989Publication A deep level transient spectroscopy comparison of the SiO2/Si and Al2O3/Si interface states
Proceedings paper2011, Photovoltaics for the 21st Century 7, 9/10/2011, p.37-44Publication A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Proceedings paper2019, Semiconductors, Dielectrics, and Metals for Nanoelectronics 17, 13/10/2019, p.45-55Publication A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Journal article2020, ECS Journal of Solid State Science and Technology, (9) 4, p.044006-1-044006-7Publication A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
Journal article2011, Physica Status Solidi. Rapid Research Letters, (5) 8, p.277-279Publication A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors
Journal article2011, Journal of Physics D: Applied Physics, (44) 47, p.475104