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Browsing by Author "Toledano Luque, Maria"

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    A comprehensive model for correlated drain and gate current fluctuations

    Goes, Wolfgang
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    Toledano Luque, Maria
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    Baumgartner, O.
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    Schanovsky, Frank
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    Kaczer, Ben  
    Proceedings paper
    2013, 16th International Workshop on Computational Electronics - IWCE, 4/06/2013, p.46-47
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    Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

    San Andres Serrano, Enrique
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    Pantisano, Luigi
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    Ramos, Javier
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    Roussel, Philippe  
    Journal article
    2007, IEEE Trans. Electron Devices, (54) 7, p.1705-1712
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    Advanced characterization of oxide traps: the dynamic time-dependent defect spectroscopy

    Grasser, Tibor
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    Rott, K.
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    Reisinger, H.
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    Wagner, P.J.
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    Goes, W
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    Schanovsky, F.
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    Waltl, M.
    Proceedings paper
    2013, IEEE International Reliability Physics Symposium - IRPS, 14/04/2013, p.2D.2
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    Advanced doping techniques for DRAM peripheral MOSFETs

    Spessot, Alessio  
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    Ritzenthaler, Romain  
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    Schram, Tom  
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    Aoulaiche, Marc
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    Cho, Moon Ju
    Meeting abstract
    2015, E-MRS Spring Meeting Symposuium AA: Non-Volatile Memories: Materials, Nanostructures and Integration Approaches, 11/05/2015, p.AA.V1
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    Analysis of performance/variability trade-off in Macaroni-type 3-D NAND Memory

    Congedo, Gabriele
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    Arreghini, Antonio  
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    Liu, Lifang
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    Capogreco, Elena  
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    Lisoni, Judit
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    Huet, Karim
    Proceedings paper
    2014, IEEE 6th International Memory Workshop, 18/05/2014, p.123-126
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    Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

    Toledano Luque, Maria
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    Kaczer, Ben  
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    Aoulaiche, Marc
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    Spessot, Alessio  
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    Roussel, Philippe  
    Meeting abstract
    2013, 18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts, 25/06/2013, p.164-165
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    Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components

    Toledano Luque, Maria
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    Kaczer, Ben  
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    Aoulaiche, Marc
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    Spessot, Alessio  
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    Roussel, Philippe  
    Journal article
    2013, Microelectronic Engineering, 109, p.314-317
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    Applying complementary trap characterization technique to crystalline g-phase-Al2O3 for improved understanding of nonvolatile memory operation and reliability

    Zahid, Mohammed
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    Ruiz Aguado, Daniel
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    Degraeve, Robin  
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    Wang, W.C
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    Govoreanu, Bogdan  
    Journal article
    2010, IEEE Transactions on Electron Devices, (57) 11, p.2907-2916
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    As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability

    Tang, Baojun
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    Croes, Kristof  
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    Barbarin, Yohan
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    Wang, Yunqi
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    Degraeve, Robin  
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    Li, Yunlong  
    Journal article
    2014, Microelectronics Reliability, (54) 9_10, p.1675-1679
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    Assessing reliability of nano-scaled CMOS technologies one defect at a time

    Kaczer, Ben  
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    Grasser, Tibor
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    Franco, Jacopo  
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    Toledano Luque, Maria
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    Weckx, Pieter  
    Proceedings paper
    2012, IEEE International Conference on Emerging Electronics - ICEE, 15/12/2012
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    Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling

    Lee, Ko-Hui
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    Degraeve, Robin  
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    Toledano Luque, Maria
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    Arreghini, Antonio  
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    Breuil, Laurent  
    Journal article
    2015, Microelectronic Engineering, 147, p.45-50
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    Atomistic approach to variability of bias-temperature instability in circuit simulations

    Kaczer, Ben  
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    Mahato, Swaraj  
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    Valduga de Almeida Camargo, Vinicius
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    Toledano Luque, Maria
    Proceedings paper
    2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.915-919
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    Automatic software for statistical prediction of reading current variability in deeply scaled 3D poly-Si channel SONOS memories

    Toledano Luque, Maria
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    Degraeve, Robin  
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    Roussel, Philippe  
    Meeting abstract
    2012, The 8th International Nanotechnology Conference on Communication and Cooperation, 8/05/2012
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    Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

    Lin, Dennis  
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    Alian, AliReza  
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    Gupta, S.
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    Yang, B.
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    Bury, Erik  
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    Sioncke, Sonja
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    Degraeve, Robin  
    Proceedings paper
    2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.28.3
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    Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions

    Groeseneken, Guido  
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    Aoulaiche, Marc
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    Cho, Moon Ju
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    Franco, Jacopo  
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    Kaczer, Ben  
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    Kauerauf, Thomas
    Proceedings paper
    2013, 20th IEEE International Symposium on the Physicsal and Failure Analysis of Integrated Circuits - IPFA, 15/07/2013, p.41-50
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    BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities

    Groeseneken, Guido  
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    Franco, Jacopo  
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    Cho, Moon Ju
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    Kaczer, Ben  
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    Toledano Luque, Maria
    Proceedings paper
    2014-12, International Electron Device Meeting - IEDM, 15/12/2014, p.828-831
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    Characterization of hexagonal rare-earth auminates for application in flash memories

    Zahid, Mohammed
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    Degraeve, Robin  
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    Toledano Luque, Maria
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    Van Houdt, Jan  
    Proceedings paper
    2011, IEEE International Reliability Physics Symposium - IRPS, 11/04/2011, p.815-818
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    Characterization of individual traps in high-k oxides

    Toledano Luque, Maria
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    Kaczer, Ben  
    Book chapter
    2014
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    Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

    Degraeve, Robin  
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    Toledano Luque, Maria
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    Arreghini, Antonio  
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    Tang, Baojun
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    Capogreco, Elena  
    Proceedings paper
    2013, International Electron Devices Meeting - IEDM, 9/12/2013, p.558-561
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    Comparison of NBTI aging on adder architectures and ring oscillators in the downscaled technologies

    Kosemura, Daisuke
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    Weckx, Pieter  
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    Morrison, Sebastien  
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    Franco, Jacopo  
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    Toledano Luque, Maria
    Journal article
    2015, Microprocessors and Microsystems, (39) 8, p.1039-1051
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