Browsing by Author "Van Hove, Marleen"
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Publication 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
; ; ; Publication 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
; ; ; Publication 2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Proceedings paper2012, International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, 23/04/2012Publication A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Proceedings paper2004-12, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.269-272Publication A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
Publication A Combined X-Ray Diffraction and Raman Analysis of Ni/Au/Te-Ohmic Contacts to n-GaAs
Publication A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Proceedings paper2010-12, IEEE International Electron Device Meeting - IEDM, 6/12/2010, p.472-472Publication A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors
Journal article2011, Journal of Physics D: Applied Physics, (44) 47, p.475104Publication A low thermal budget pre metal dielectric stack using PECVD and HDP processing
Oral presentation2001, 7th International Dielectrics & Conductors for ULSI Multilevel Interconnection Conference (DCMIC) and ExhibitionPublication A new approach for the measurement of resistivity and cross-sectional area of an aluminium interconnect line: principle and applications
Proceedings paper1998, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, 30/09/1997, p.197-204Publication A new ultra-low K ILD material based on organic-inorganic hybrid resins
Publication A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates
Journal article2005-10, Journal of Applied Physics, (98) 8, p.083515-1-083515-9Publication Advanced solutions for copper and low k technology
Oral presentation2000, Semicon Europe; 2000; München, Germany.Publication AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Publication AlGaN/GaN/AlGaN double heterostructures grown on 200 mm silicon(111) substrates with high electron mobility
Journal article2012, Applied Physics Express, (5) 1, p.011002-1Publication AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
Publication AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Publication AlN/AlGaN/GaN wafer optimization on silicon (111): bow and crystal quality control for Si-CMOS fabs
Journal article2014, Physica Status Solidi C, (11) 3_4, p.450-453Publication An investigation of ultra low-k dielectrics with high thermal stability for integration in memory devices
Journal article2007, Microelectronic Engineering, (84) 11, p.2582-2586Publication Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation
Journal article2015, Solid-State Electronics, 113, p.9-14