Browsing by Author "Veloso, Anabela"
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Publication 1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Journal article2013-03, Applied Physics Letters, (102) 7, p.73503Publication 2D and 3D Fully-depleted extension-less devices for advanced logic and memory applications
Proceedings paper2012-09, International Conference on Solid State Devices and Materials - SSDM, 25/09/2012Publication 3D backside integration of FinFETs: Is there an impact on LF noise?
Journal article2023, SOLID-STATE ELECTRONICS, (207) September, p.Art. 108724Publication 3D dopant profiling in silicon nanowires
Oral presentation2016, European Atom Probe Tomography WorkshopPublication 3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.238-241Publication 45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Journal article2005, Microelectronic Engineering, 80, p.7-10Publication A 50nm high-k poly silicon gate stack with a buried SiGe channel
Proceedings paper2007, International Symposium on VLSI Technology, Systems and Applications, 23/04/2007Publication A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node
Journal article2004-08, IEEE Electron Device Letters, (25) 8, p.568-570Publication A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Proceedings paper2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.489-492Publication A wafer-scaled III-V vertical FET fabrication by means of plasma etching
Journal article2018, Microelectronic Engineering, 192, p.14-18Publication Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Proceedings paper2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199Publication Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Proceedings paper2007-09, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007Publication Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics
Journal article2007, IEEE Electron Device Letters, (28) 11, p.980-983Publication Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Journal article2008, Solid-State Electronics, (52) 9, p.1303-1311Publication Active area patterning for CFET - Nanosheet etch
Proceedings paper2024, Conference on Advanced Etch Technology and Process Integration for Nanopatterning XIII, FEB 26-29, 2024, p.Art. 1295804Publication Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS
Proceedings paper2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159Publication Advanced CMOS device technologies for 45nm node and below
Journal article2007, Science and Technology of Advanced Materials, (8) 3, p.214-218Publication Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 25/05/2009, p.935Publication Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
Proceedings paper2009, Silicon-on-Insulator Technology and Devices 14, 24/05/2009, p.45-54Publication Advanced high voltage e-beam system combined with an enhanced D2DB for on-device overlay measurement
Proceedings paper2023, Conference on Metrology, Inspection, and Process Control XXXVII, FEB 27-MAR 02, 2023, p.Art. 124961W