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Browsing by Author "Veloso, Anabela"

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    1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

    Lee, Jae Woo
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    Cho, Moon Ju
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    Simoen, Eddy  
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    Ritzenthaler, Romain  
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    Togo, Mitsuhiro
    Journal article
    2013-03, Applied Physics Letters, (102) 7, p.73503
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    2D and 3D Fully-depleted extension-less devices for advanced logic and memory applications

    Veloso, Anabela  
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    De Keersgieter, An  
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    Aoulaiche, Marc
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    Jurczak, Gosia  
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    Thean, Aaron  
    Proceedings paper
    2012-09, International Conference on Solid State Devices and Materials - SSDM, 25/09/2012
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    3D backside integration of FinFETs: Is there an impact on LF noise?

    Simoen, Eddy
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    Jourdain, Anne  
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    Claeys, Cor
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    Veloso, Anabela  
    Journal article
    2023, SOLID-STATE ELECTRONICS, (207) September, p.Art. 108724
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    3D dopant profiling in silicon nanowires

    Fleischmann, Claudia  
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    Melkonyan, Davit
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    Arnoldi, Laurent
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    Bogdanowicz, Janusz  
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    Kumar, Arul
    Oral presentation
    2016, European Atom Probe Tomography Workshop
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    3D-carrier profiling and parasitic resistance analysis in vertically stacked gate-all-around Si nanowire CMOS transistors

    Eyben, Pierre  
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    Ritzenthaler, Romain  
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    De Keersgieter, An  
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    Chiarella, Thomas  
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    Veloso, Anabela  
    Proceedings paper
    2019, IEEE International Electron Devices Meeting - IEDM 2019, 7/12/2019, p.238-241
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    45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

    Mitsuhashi, Riichirou
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    Yamamoto, Kazuhiko
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    Hayashi, S.
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    Rothschild, Aude
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    Kubicek, Stefan  
    Journal article
    2005, Microelectronic Engineering, 80, p.7-10
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    A 50nm high-k poly silicon gate stack with a buried SiGe channel

    Jakschik, S.
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    Hoffmann, Thomas Y.
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    Cho, Hag-Ju
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    Veloso, Anabela  
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    Loo, Roger  
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    Hyun, S.
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    Sorada, H.
    Proceedings paper
    2007, International Symposium on VLSI Technology, Systems and Applications, 23/04/2007
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    A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node

    Collaert, Nadine  
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    Dixit, Abhisek
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    Goodwin, Michael
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    Kottantharayil, Anil
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    Rooyackers, Rita
    Journal article
    2004-08, IEEE Electron Device Letters, (25) 8, p.568-570
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    A new method to calculate leakage current and its applications for sub-45nm MOSFETs

    Lujan, Guilherme
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    Magnus, Wim  
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    Soree, Bart  
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    Pourghaderi, Mohammad Ali
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    Veloso, Anabela  
    Proceedings paper
    2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.489-492
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    A wafer-scaled III-V vertical FET fabrication by means of plasma etching

    Milenin, Alexey  
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    Veloso, Anabela  
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    Collaert, Nadine  
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    Piumi, Daniele  
    Journal article
    2018, Microelectronic Engineering, 192, p.14-18
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    Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

    Rothschild, Aude
    ;
    Shi, Xiaoping
    ;
    Everaert, Jean-Luc
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    Kerner, Christoph  
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    Chiarella, Thomas  
    Proceedings paper
    2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.198-199
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    Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

    Veloso, Anabela  
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    Yu, HongYu
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    Lauwers, Anne  
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    Chang, Shou-Zen
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    Adelmann, Christoph  
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    Onsia, Bart  
    Proceedings paper
    2007-09, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007
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    Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics

    Veloso, Anabela  
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    Yu, HongYu
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    Chang, S.Z.
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    Adelmann, Chris
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    Onsia, Bart  
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    Brus, Stephan  
    Journal article
    2007, IEEE Electron Device Letters, (28) 11, p.980-983
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    Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

    Veloso, Anabela  
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    Yu, HongYu
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    Lauwers, Anne  
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    Chang, Shou-Zen
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    Adelmann, Christoph  
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    Onsia, Bart  
    Journal article
    2008, Solid-State Electronics, (52) 9, p.1303-1311
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    Active area patterning for CFET - Nanosheet etch

    Brissonneau, Vincent  
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    Koo, Il Gyo  
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    Hosseini, Maryam  
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    Batuk, Dmitry  
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    Veloso, Anabela  
    Proceedings paper
    2024, Conference on Advanced Etch Technology and Process Integration for Nanopatterning XIII, FEB 26-29, 2024, p.Art. 1295804
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    Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

    Shickova, Adelina
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    Kauerauf, Thomas
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    Rothschild, Aude
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    Aoulaiche, Marc
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    Sahhaf, Sahar  
    Proceedings paper
    2007, Symposium on VLSI. Technology Digest of Technical Papers, 14/06/2007, p.158-159
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    Advanced CMOS device technologies for 45nm node and below

    Veloso, Anabela  
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    Hoffmann, Thomas
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    Lauwers, Anne  
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    Yu, HongYu
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    Severi, Simone  
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    Augendre, Emmanuel
    Journal article
    2007, Science and Technology of Advanced Materials, (8) 3, p.214-218
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    Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges

    Veloso, Anabela  
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    Collaert, Nadine  
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    De Keersgieter, An  
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    Witters, Liesbeth  
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    Rooyackers, Rita
    Meeting abstract
    2009, 215th Electrochemical Society Spring Meeting, 25/05/2009, p.935
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    Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges

    Veloso, Anabela  
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    Collaert, Nadine  
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    De Keersgieter, An  
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    Witters, Liesbeth  
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    Rooyackers, Rita
    Proceedings paper
    2009, Silicon-on-Insulator Technology and Devices 14, 24/05/2009, p.45-54
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    Advanced high voltage e-beam system combined with an enhanced D2DB for on-device overlay measurement

    Kang, Seulki
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    Maruyama, Kotaro
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    Yamazaki, Yuichiro
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    Beggiato, Matteo  
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    Veloso, Anabela  
    Proceedings paper
    2023, Conference on Metrology, Inspection, and Process Control XXXVII, FEB 27-MAR 02, 2023, p.Art. 124961W
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