Browsing by Author "Waltl, Michael"

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Complete extraction of defect bands responsible for instabilities in n and pFinFETs

Efficient Modeling of Charge Trapping a Cryogenic Temperatures-Part II: Experimental

Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory

Extraction of statistical gate oxide parameters from large MOSFET arrrays

First–principles parameter–free modeling of n– and p–FET hot–carrier degradation

Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes

Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory

Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs

Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities

Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors

Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs

On the volatility of oxide defects: activation, deactivation, and transformation

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Physical modeling of bias temperature instabilities in SiC MOSFETs

Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias

Separation of electron and hole trapping components of PBTI in SiON nMOS transistors

Single-Versus Multi-Step Trap Assisted Tunneling Currents-Part II: The Role of Polarons