Browsing by Author "Wang, Gang"
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Publication A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)
; ; ; ; ; Blanpain, BartJournal article2009-03, Applied Physics Letters, (94) 10, p.102115Publication Advancing CMOS beyond the Si roadmap with Ge and III/V devices
; ; ; ; Publication Analysis of the temperature dependence of trap-assisted tunneling in Ge pFET junctions
; ; ; Claeys, CorJournal article2011, Journal of the Electrochemical Society, (158) 10, p.H955-H960Publication Analysis of the temperature dependence of trap-assisted-tunneling in Ge pFETs junctions
; ; ; Claeys, CorProceedings paper2011, China Semiconductor Technology International Conference - CSTIC, 13/03/2011, p.725-730Publication Comprehensive study of the fabrication of SGOI substrates by the Ge condensation technique: oxidation kinetics and relaxation mechanism
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2388Publication Comprehensive study of the fabrication of SGOI substrates By the Ge condensation technique: oxidation kinetics and relaxation mechanism
Proceedings paper2009, ULSI Process Technology 6, 4/10/2009, p.363-375Publication Defect aspects of Ge-on-Si materials and devices
Proceedings paper2009, International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors - ULSIC, 5/07/2009, p.99-109Publication Defect assessment and leakage control in Ge pFET junctions
Meeting abstract2013-09, E-MRS Fall Meeting Symp. A: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques & Applications, 16/09/2013Publication Defects and electrical performance of germanium PMOS devices
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 24/05/2009, p.717Publication Defects, junction leakage and electrical performance of Ge pFET devices
Proceedings paper2009, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-band CMOS. 5: New Material, Processing, and Equipment, 24/05/2009, p.195-205Publication Electrical characterization of germanium for advanced devices
Oral presentation2008, Summer School on Inorganic Functional MaterialsPublication Epitaxial Ge on standard STI patterned Si wafers: high quality virtual substrates for Ge pMOS and III/V nMOS
Proceedings paper2009, ULSI Process Integration 6, 4/10/2009, p.335-350Publication Epitaxial Ge on standard STI patterned Si wafers: high quality virtual substrates for Ge pMOS and III/V nMOS
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2387Publication Epitaxial Si, SiGe and Ge for high-performance devices
Oral presentation2010, ASM User MeetingPublication Epitaxy of III-V based channels on Si and transistor integration for 12-nm node CMOS
Proceedings paper2012, 24th Conference on Indium Phosphide and Related Materials - IPRM, 27/08/2012Publication Extended-defect aspects on Ge-on-Si materials and devices
; ; ; ; ; Claeys, CorJournal article2009, Journal of the Electrochemical Society, (157) 2, p.R1-R5Publication Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
; ; ; Publication Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
; ; ; Journal article2010, Thin Solid Films, (518) 9, p.2538-2541Publication Fabrication of virtual Ge and Ge-rich SiGe substrates using selective or non-selective epitaxial growth
Oral presentation2009, EMRS Spring Meeting: Symp I: Silicon and Germanium issues for future CMOS devices / Nanosil Visionary WorkshopPublication Ge and InP selective epitaxial growth on Si substrates for advanced CMOS devices
Wang, GangPHD thesis2011-03
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