Browsing by Author "Yu, Hao"
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Publication 1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Proceedings paper2015, IEEE International Electron Devices Meeting - IEDM, 7/12/2015, p.592-595Publication A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction
Journal article2014, IEEE Electron Device Letters, (35) 9, p.957-959Publication A snapshot review on metal-semiconductor contact exploration for 7-nm CMOS technology and beyond
Journal article review2022-11-21, MRS ADVANCES, (7) 36, p.1369-1379Publication Advanced transistors for high frequency applications
Proceedings paper2020, 237th ECS Spring Meeting - Advanced CMOS-compatible Semiconductor Devices 19, 10/05/2020, p.27-38Publication Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions
Proceedings paper2022-12-01, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Beyond-Si materials and devices for more Moore and more than Moore applications
Proceedings paper2016, International Conference on IC Design and Technology - ICICDT, 27/06/2016, p.1-5Publication Characterization of ultra-thin nickel-silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)
Journal article2016, Microelectronic Engineering, 157, p.52-59Publication Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
; ; ; ; Journal article2024, MICROMACHINES, (15) 8, p.Art. 951Publication Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.550-552Publication Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts
Journal article2016, Applied Physics Letters, (108) 17, p.171602Publication DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Proceedings paper2021, 15th European Microwave Integrated Circuits Conference (EuMIC) / 50th European Microwave Conference (EuMC), JAN 10-15, 2021, p.89-92Publication Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Journal article2020, Physical Review Applied, (14) 2, p.24093Publication Effective contact resistivity reduction for Mo/Pd/n-In0.53Ga0.47As contact
; ; ; ; ; Journal article2019, IEEE Electron Device Letters, (40) 11, p.1800-1803Publication Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy
Proceedings paper2019-06, 2019 19th International Workshop on Junction Technology (IWJT), 6/06/2019Publication Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts
Meeting abstract2019, 2019 EMRS fall meeting, 16/09/2019Publication ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Proceedings paper2021, IEEE International Electron Devices Meeting (IEDM), DEC 11-16, 2021Publication ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs
Journal article2022-01-25, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 4, p.2180-2187Publication Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Proceedings paper2019-03, Advanced Etch Technology for Nanopatterning VIII, 24/02/2019, p.1096305