Browsing by author "Van Meirhaeghe, R. L."
Now showing items 1-20 of 23
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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
Vanalme, G. M.; Van Meirhaeghe, R. L.; Cardon, F.; Van Daele, Peter (1997) -
A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
Van Meirhaeghe, R. L.; Vanalme, G. M.; Goubert, L.; Cardon, F.; Van Daele, P. (1997) -
A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments
Vanalme, G. M.; Goubert, L.; Van Meirhaeghe, R. L.; Cardon, F.; Van Daele, Peter (1999) -
A BEEM study of PtSi Schottky contacts on ion-milled Si
Ru, Guo-Ping; Detavernier, C.; Alves Donaton, Ricardo; Blondeel, A.; Clauws, P.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen; Qu, X. P.; Zhu, S. Y.; Li, Bing-Zong (1999) -
A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching
Goubert, L.; Van Meirhaeghe, R. L.; Clauws, P.; Cardon, F.; Van Daele, Peter (1997) -
An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices
Van Meirhaeghe, R. L.; Goubert, L.; Fiermans, L.; Laflère, W. H.; Cardon, F.; De Dobbelaere, Peter; Van Daele, P. (1995) -
Controlling CoSi2 nucleation: the effect of entropy of mixing
Detavernier, C.; Van Meirhaeghe, R. L.; Maex, Karen; Cardon, F. (2000) -
Controlling CoSi2 nucleation: the effect of entropy of mixing
Detavernier, C.; Van Meirhaeghe, R. L.; Maex, Karen; Cardon, F. (2001) -
CoSi2 formation in the presence of interfacial silicon oxide
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Donaton, R. A.; Maex, Karen (1999) -
CoSi2 formation in the Ti/Co/SiO2/Si system
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen; Bender, Hugo; Zhu, S. Y. (2000) -
CoSi2 formation through SiO 2
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen (2001) -
Determination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures
Depas, Michel; Vermeire, Bert; Mertens, Paul; Van Meirhaeghe, R. L.; Heyns, Marc (1995) -
Epitaxial CoSi2 formation by a Cr or Mo interlayer
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen; Brijs, Bert; Vandervorst, Wilfried (2000) -
Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried (2001) -
Influence of mixing entropy on the nucleation of CoSi2
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen (2000) -
Influence of Ti on CoSi2 nucleation
Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Maex, Karen; Vandervorst, Wilfried; Brijs, Bert (2000) -
Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy
Ruttens, Gerlinde; Qu, X. P.; Zhu, S. Y.; Li, Bing-Zong; Detavernier, C.; Van Meirhaeghe, R. L.; Cardon, F.; Donaton, R. A.; Maex, Karen (2000) -
Nondestructive characterization of thin silicides using x-ray reflectivity
Detavernier, C.; De Gryse, R.; Van Meirhaeghe, R. L.; Cardon, F.; Ru, Guo-Ping; Qu, Xin-Ping; Li, Bing-Zong; Alves Donaton, Ricardo; Maex, Karen (2000) -
Orientation dependent stress build-up during the formation of epitaxial CoSi2
Steegen, An; Detavernier, C.; Maex, Karen; Van Meirhaeghe, R. L.; Cardon, F. (2000) -
Orientation-dependent stress build-up during the formation of epitaxial CoSi2
Steegen, An; Detavernier, C.; Lauwers, A.; Maex, Karen; Van Meirhaeghe, R. L.; Cardon, F. (2001)