Browsing by author "Eneman, Geert"
Now showing items 1-20 of 334
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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
Mitard, Jerome; Witters, Liesbeth; Loo, Roger; Lee, Seung Hun; Sun, J.W.; Franco, Jacopo; Ragnarsson, Lars-Ake; Brand, A.; Lu, X.; Yoshido, N.; Eneman, Geert; Brunco, David; Vorderwestner, M.; Storck, P.; Milenin, Alexey; Hikavyy, Andriy; Waldron, Niamh; Favia, Paola; Vanhaeren, Danielle; Vanderheyden, Annelies; Richard, Olivier; Mertens, Hans; Arimura, Hiroaki; Sioncke, Sonja; Vrancken, Christa; Bender, Hugo; Eyben, Pierre; Barla, Kathy; Lee, Sun Ghil; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2014) -
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
3D chip package interaction thermo-mechanical challenges: proximity effects of through silicon vias and μ-bumps
Guo, Wei; Van der Plas, Geert; Ivankovic, Andrej; Eneman, Geert; Cherman, Vladimir; De Wachter, Bart; Mercha, Abdelkarim; Gonzalez, Mario; Civale, Yann; Redolfi, Augusto; Buisson, Thibault; Jourdain, Anne; Vandevelde, Bart; Rebibis, Kenneth June; De Wolf, Ingrid; La Manna, Antonio; Beyer, Gerald; Beyne, Eric; Swinnen, Bart (2012) -
3D technology roadmap and status
Marchal, Pol; Van der Plas, Geert; Eneman, Geert; Moroz, V.; Badaroglu, Mustafa; Mercha, Abdelkarim; Thijs, Steven; Linten, Dimitri; Katti, Guruprasad; Stucchi, Michele; Vandevelde, Bart; Oprins, Herman; Cherman, Vladimir; Croes, Kris; Redolfi, Augusto; La Manna, Antonio; Travaly, Youssef; Beyne, Eric; Cartuyvels, Rudi (2011) -
3D-carrier profiling in FinFETs using scanning spreading resistance microscopy
Mody, Jay; Zschaetzsch, Gerd; Koelling, Sebastian; De Keersgieter, An; Eneman, Geert; Kambham, Ajay Kumar; Drijbooms, Chris; Schulze, Andreas; Chiarella, Thomas; Horiguchi, Naoto; Hoffmann, Thomas; Eyben, Pierre; Vandervorst, Wilfried (2011) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Mitard, Jerome; Witters, Liesbeth; Eneman, Geert; Hellings, Geert; Pantisano, Luigi; Hikavyy, Andriy; Loo, Roger; Eyben, Pierre; Horiguchi, Naoto; Thean, Aaron (2012) -
A 50nm high-k poly silicon gate stack with a buried SiGe channel
Jakschik, S.; Hoffmann, Thomas Y.; Cho, Hag-Ju; Veloso, Anabela; Loo, Roger; Hyun, S.; Sorada, H.; Inoue, A.; de Potter de ten Broeck, Muriel; Eneman, Geert; Severi, Simone; Absil, Philippe; Biesemans, Serge (2007) -
A fast and accurate method to study the impact of interface traps on germanium MOS performance
Hellings, Geert; Eneman, Geert; Mitard, Jerome; Martens, Koen; Wang, Wei-E; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2011) -
A systematic study of trade-offs in engineering a locally strained pMOSFET
Nouri, Faran; Verheyen, Peter; Washington, Lori; Moroz, Victor; De Wolf, Ingrid; Kawaguchi, S.; Biesemans, Serge; Schreutelkamp, Rob; Kim, Y.; Shen, M.; Xu, X.; Rooyackers, Rita; Jurczak, Gosia; Eneman, Geert; De Meyer, Kristin; Smith, L.; Pramanik, D.; Forstner, H.; Thirupapuliyur, S.; Higashi, G. (2004) -
Addressing Key Challenges for SiGe-pFin Technologies: Fin Integrity, Low-D-IT Si-cap-free Gate Stack and Optimizing the Channel Strain
Arimura, Hiroaki; Capogreco, Elena; Wostyn, Kurt; Eneman, Geert; Ragnarsson, Lars-Ake; Brus, Stephan; Baudot, Sylvain; Peter, Antony; Schram, Tom; Favia, Paola; Richard, Olivier; Bender, Hugo; Mitard, Jerome; Horiguchi, Naoto (2020) -
Advanced channel materials for the semiconductor industry
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Lin, Dennis; Mitard, Jerome; Sioncke, Sonja; Waldron, Niamh; Witters, Liesbeth; Zhou, Daisy; Thean, Aaron (2015) -
Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
Arimura, Hiroaki; Eneman, Geert; Capogreco, Elena; Witters, Liesbeth; De Keersgieter, An; Favia, Paola; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Ragnarsson, Lars-Ake; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan; Horiguchi, Naoto (2018) -
An analytical compact model for estimation of stress in multiple through-silicon via configurations
Eneman, Geert; Cho, Jong Hoon; Moroz, Victor; Milojevic, Dragomir; Choi, Munkang; De Meyer, Kristin; Mercha, Abdelkarim; Beyne, Eric; Hoffmann, Thomas Y.; Van der Plas, Geert (2011) -
An in-depth study of high-performing strained germanium nanaowires pFETs
Mitard, Jerome; Jang, Doyoung; Eneman, Geert; Arimura, Hiroaki; Parvais, Bertrand; Richard, Olivier; Van Marcke, Patricia; Witters, Liesbeth; Capogreco, Elena; Bender, Hugo; Ritzenthaler, Romain; Mertens, Hans; Hikavyy, Andriy; Loo, Roger; Dekkers, Harold; Sebaai, Farid; Horiguchi, Naoto; Mocuta, Anda; Collaert, Nadine (2018) -
Analysis of junction leakage in advanced germanium p+/n junctions
Eneman, Geert; Sicart i Casain, Oriol; Simoen, Eddy; Brunco, David; De Jaeger, Brice; Satta, Alessandra; Nicholas, Gareth; Claeys, Cor; Meuris, Marc; Heyns, Marc (2007) -
Analysis of junctions formed in strained Si/SiGe substrates
Eneman, Geert; Simoen, Eddy; Lauwers, Anne; Lindsay, Richard; Verheyen, Peter; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; Demuynck, Steven; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Analysis of microbump induced stress effects in 3D stacked IC technologies
Ivankovic, Andrej; Van der Plas, Geert; Moroz, V.; Choi, M.; Cherman, Vladimir; Mercha, Abdelkarim; Marchal, Pol; Gonzalez, Mario; Eneman, Geert; Zhang, Wenqi; Buisson, Thibault; Detalle, Mikael; La Manna, Antonio; Verkest, Diederik; Beyer, Gerald; Beyne, Eric; Vandevelde, Bart; De Wolf, Ingrid; Vandepitte, Dirk (2012) -
Analysis of the induced stresses in silicon during thermocompression Cu-Cu bonding of Cu-through-vias in 3D-SIC architecture
Okoro, Chukwudi; Eneman, Geert; Gonzalez, Mario; Vandevelde, Bart; Swinnen, Bart; Stoukatch, Serguei; Beyne, Eric; Vandepitte, Dirk (2007-05)