Browsing by author "Hoffmann, Thomas Y."
Now showing items 1-20 of 161
-
1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Krom, Raymond; Franco, Jacopo; Eneman, Geert; Hikavyy, Andriy; Vincent, Benjamin; Loo, Roger; Favia, Paola; Dekkers, Harold; Altamirano Sanchez, Efrain; Vanderheyden, Annelies; Vanhaeren, Danielle; Eyben, Pierre; Takeoka, Shinji; Yamaguchi, Shinpei; Van Dal, Mark; Wang, Wei-E; Hong, Sug-Hun; Vandervorst, Wilfried; De Meyer, Kristin; Biesemans, Serge; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
3D stacked IC demonstration using a through silicon via first approach
Van Olmen, Jan; Mercha, Abdelkarim; Katti, Guruprasad; Huyghebaert, Cedric; Van Aelst, Joke; Seppala, Emma; Zhao, Chao; Armini, Silvia; Vaes, Jan; Cotrin Teixeira, Ricardo; Van Cauwenberghe, Marc; Verdonck, Patrick; Verhemeldonck, Koen; Jourdain, Anne; Ruythooren, Wouter; de Potter de ten Broeck, Muriel; Opdebeeck, Ann; Chiarella, Thomas; Parvais, Bertrand; Debusschere, Ingrid; Hoffmann, Thomas Y.; De Wachter, Bart; Dehaene, Wim; Stucchi, Michele; Rakowski, Michal; Soussan, Philippe; Cartuyvels, Rudi; Beyne, Eric; Biesemans, Serge; Swinnen, Bart (2008) -
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010) -
8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
A 50nm high-k poly silicon gate stack with a buried SiGe channel
Jakschik, S.; Hoffmann, Thomas Y.; Cho, Hag-Ju; Veloso, Anabela; Loo, Roger; Hyun, S.; Sorada, H.; Inoue, A.; de Potter de ten Broeck, Muriel; Eneman, Geert; Severi, Simone; Absil, Philippe; Biesemans, Serge (2007) -
A fast and accurate method to study the impact of interface traps on germanium MOS performance
Hellings, Geert; Eneman, Geert; Mitard, Jerome; Martens, Koen; Wang, Wei-E; Hoffmann, Thomas Y.; Meuris, Marc; De Meyer, Kristin (2011) -
Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)
Noda, T.; Eyben, Pierre; Vandervorst, Wilfried; Vrancken, Christa; Rosseel, Erik; Ortolland, Claude; Clarysse, Trudo; Goossens, Jozefien; De Keersgieter, An; Felch, S.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2008) -
Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges
Veloso, Anabela; Collaert, Nadine; De Keersgieter, An; Witters, Liesbeth; Rooyackers, Rita; Van Dal, Mark; Duffy, Ray; Pawlak, Bartek; Lander, Rob; Hoffmann, Thomas Y. (2009) -
Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric
Cho, Moon Ju; Aoulaiche, Marc; Degraeve, Robin; Kaczer, Ben; Kauerauf, Thomas; Ragnarsson, Lars-Ake; Adelmann, Christoph; Van Elshocht, Sven; Hoffmann, Thomas Y.; Groeseneken, Guido (2011) -
Advanced USJ for high-k / metal gate CMOS devices
Absil, Philippe; Ortolland, Claude; Aoulaiche, Marc; Rosseel, Erik; Verheyen, Peter; Vrancken, Christa; Horiguchi, Naoto; Noda, Tajii; Felch, Susan; Schreutelkamp, Rob; Hoffmann, Thomas Y. (2008) -
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
Heyns, Marc; Brammertz, Guy; Caymax, Matty; Groeseneken, Guido; Hoffmann, Thomas Y.; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Pourtois, Geoffrey; Verhulst, Anne; Wang, Gang (2010) -
ALD high-K and metal gate solutions
Absil, Philippe; Ragnarsson, Lars-Ake; Hoffmann, Thomas Y.; Biesemans, Serge (2009) -
An analytical compact model for estimation of stress in multiple through-silicon via configurations
Eneman, Geert; Cho, Jong Hoon; Moroz, Victor; Milojevic, Dragomir; Choi, Munkang; De Meyer, Kristin; Mercha, Abdelkarim; Beyne, Eric; Hoffmann, Thomas Y.; Van der Plas, Geert (2011) -
Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach
Noda, Taiji; Vandervorst, Wilfried; Felch, S.; Parihar, V.; Cuperus, Aldert; Mcintosh, R.; Vrancken, Christa; Rosseel, Erik; Bender, Hugo; Van Daele, Benny; Niwa, Masaaki; Umimoto, H.; Schreutelkamp, Rob; Absil, Philippe; Jurczak, Gosia; De Meyer, Kristin; Biesemans, Serge; Hoffmann, Thomas Y. (2007) -
Analysis of pocket profile deactivation and its impact on Vth variation for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taichi; Vandervorst, Wilfried; Vrancken, Christa; Ortolland, Claude; Rosseel, Erik; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2011-03) -
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques
Redolfi, Augusto; Kubicek, Stefan; Rooyackers, Rita; Kim, Min-Soo; Sleeckx, Erik; Devriendt, Katia; Shamiryan, Denis; Vandeweyer, Tom; Delande, Tinne; Horiguchi, Naoto; Togo, Mitsuhiro; Wouters, Johan M. D.; Jurczak, Gosia; Hoffmann, Thomas Y.; Cockburn, Andrew; Gravey, Virginie; Diehl, D.L. (2012) -
Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2012) -
Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
Ortolland, Claude; Mathew, Suraj; Duffy, Ray; Saino, Kanta; Kim, Chul Sung; Mertens, Sofie; Horiguchi, Naoto; Vrancken, Christa; Chiarella, Thomas; Kerner, Christoph; Absil, Philippe; Lauwers, Anne; Biesemans, Serge; Hoffmann, Thomas Y. (2009)